5964 FET Search Results

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F C 38V 5964 5 .9 ~ 6 .4 G H z BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FC 38V 5964 is an internally im pedance-matched GaAs power FET especially designed fo r use in 5 .9 — 6 .4 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: PRELIMINARY DATA SHEET_ GaAs INTEGRATED CIRCUIT MC-5963, MC-5964 800 M TO 900 MHz-BAND POWER AMPLIFIER FOR THE ANALOG HAND-HELD PHONE FOR AMPS, E-TACS DESCRIPTION The MC-5963, 5964 are 800 to 900 MHz band GaAs Multi-chip IC’s which were developed for digital Cellular

MC-5* NEC

Contextual Info: PRELIMINARY DATA SHEET_ GaAs INTEGRATED CIRCUIT MC-5963, MC-5964 800 M TO 900 MHz-BAND POWER AMPLIFIER FOR THE ANALOG HAND-HELD PHONE FOR AMPS, E-TACS DESCRIPTION The MC-5963, 5964 are 800 to 900 MHz band GaAs Multi-chip IC’s which were developed for digital Cellular

agilent n3300A

Abstract: N3303
Contextual Info: Programming Guide Agilent Technologies DC Electronic Loads Models N3300A, N3301A, N3302A, N3303A N3304A, N3305A, N3306A, and N3307A Part No. 5964-8198 Microfiche No 5964-8199 Printed in Malaysia March, 2002 Safety Summary The beginning of the electronic load User’s Guide has a Safety Summary page. Be sure you are familiar

Z5964-4

Abstract: Z5964-8D 1084 1016 dL z5964-4d Z5964-15 Z5964 5964-8D
Contextual Info: N E Z5964-15D N E Z5964-15D L N E Z5964-8D N E Z 5964-8D L N E Z5964-4D N E Z 5964-4D L C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES • HIGH OUTPUT POWER AND EFFICIENCY vs. INPUT POWER P out 18W 42.5 dBm Typ P idB for NEZ5964-15D/15DL 9W (39.5 dBm) Typ P idB for NEZ5964-8D/8DL

MGFC36V5964

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 36V 5964 p 'o d u c,i° " P'a" d lS C O B t W 5 .9 ' 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V5964 is an internally impedance-matched GaAs power F E T especially designed for use in 5.9 ~ 6.4

FLM5964-8C

Contextual Info: F I M 5964-HC Internally Matched Power ìaAs E E l s ABSOLUTE MAXIMUM RATING (Am bient Temperature Ta=25°C Item Symbol Condition Drain-Source Voltage vds Gate-Source Voltage VGS Tc = 25°C Total Power Dissipation Pt Storage Temperature Tstg Channel Temperature

IM-5964-3

Abstract: IM5964-3 5964 fet IM5964-6 IM-5964-6 Avantek Avantek, Inc IM5964 IM-5964-3/-6
Contextual Info: AVANTEK ObE INC 0A V A N TEK D | DOObOEO fl | T-39-05 IM-5964-3/-6 3 & 6 Watt, 5.9-6.4 GHz Internally Matched Power GaAs FET Features • • • • • • u m it t Avantek IMFET Package 5.9-6.4 GHz Minimum Bandwidth Internally Matched Input/Output Impedance

Fujitsu FLM 150

Abstract: 5964-6D
Contextual Info: FLM 5964-6D Internally Matched Power CiaAs I 'E l s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage vds 15 V Gate-Source Voltage vgs -5 V 31.2 w °c Total Power Dissipation Tc = 25°C pt Storage Temperature

Contextual Info: FLM 5964 12DA - Internally Matched Power ìaAs F ET s ABSOLUTE MAXIMUM RATING (A m bient Tem perature Ta=25°C Hem SymlxM Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 57.6 w Total Power D issipation pt Tc = 25°C Storage Temperature

5964 fet

Abstract: C44V5964
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F C 44V 5964 5 .9 ~ 6 .4 G H z BAND 2 4 W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAW ING The M G F C 4 4 V 5 9 6 4 is an internally impedance-matched Unit: millimeters inches GaAs power F E T especailly designed fo r use in 5 .9 ~ 6.4

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V 5964 5 .9 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G F C 4 0 V 5 9 6 4 is an internally impedance-matched GaAs power F E T especially designed for use in 5 . 9 — 6 . 4 20.4 ± 0 . 2 0 .8 0 3 ± 0 . 0 0 8

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F C 44V 5964 5 . 9 —6 .4 G H z BAND 2 4 W INTERNA LLY M ATCHED GaAs FET DESCRIPTION OUTLINE D R A W IN G The M G F C 4 4 V 5 9 6 4 is an internally impedance-matched Unit: millimeters inches GaAs power F E T especailly designed for use in 5.9 ~ 6.4

x band Gaas Power Amplifier 10W

Abstract: MGFC40V5964 pir 5 r0049 my fet
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V 5964 5 . 9 —6 .4 G H z BAND 1 0 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 5 9 6 4 is an internally impedance-matched GaAs power F E T especially designed fo r use in 5 . 9 — 6 . 4 G H z band amplifiers. The herm etically sealed metal-ceramic

C38V5964

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F C 38V 5964 5 .9 —6.4G H z BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F C 3 8 V 5 9 6 4 is a n in te rn a lly im p e d a n c e -m a t c h e d G aA s p o w e r F E T es p ec ially designed fo r use in 5 . 9 — 6 . 4

C42V5964

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964 S .9 —6.4G H z BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 2 V 5 9 6 4 is an internally impedance-matched GaAs power F E T especailly designed fo r use in 5.9 ~ 6.4 GH z band amplifiers. The herm etically sealed metal-ceramic

MGF-C34M

Contextual Info: MITSUBISHI {DISCRETE SC> tí dF | b s t m a T aoioiaa i MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC34M5964 FOR M ICROW AVE PO W ER A M P L IF IE R S IN TER N A LLY MATCHED Soroe P 1 6 2 49 82 9 MITSUBISHI DISCRETE SC 9 1D 1 0 1 22 D T-tf-Ol D ESCRIPTION T h e M G F C 3 4 M 5 9 6 4 is an internally im pedance m atched

MGF4937

Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Contextual Info: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed

m1a transistor smd

Abstract: SMD M1A 5964 fet MC-5963 P12331EJ1V0DS00 m1a smd
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

MT3S111P

Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
Contextual Info: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287

MGFS45H2201G

Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
Contextual Info: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety

MT4S300T

Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors

2sc5066

Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs

RFM70U12D

Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック