58771 Search Results

Contextual Info: 2SK3390 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0208-0400 Rev.4.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd = 60% min. f = 836 MHz • Compact package capable of surface mounting

Contextual Info: FX30KMJ-06 High-Speed Switching Use Pch Power MOS FET REJ03G1446-0200 Previous: MEJ02G0276-0101 Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 4 V VDSS : –60 V rDS(ON) (max) : 54 mΩ ID : –30 A Integrated Fast Recovery Diode (TYP.) : 55 ns

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: M51955A,B/M51956A,B Voltage Detecting, System Resetting IC Series REJ03D0777-0300 Rev.3.00 Sep 18, 2007 Description M51955A,B/M51956A,B are semiconductor integrated circuits for resetting of all types of logic circuits such as CPUs, and has the feature of setting the detection voltage by adding external resistance.

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: HSD226 Silicon Schottky Barrier Diode for High Speed Switching REJ03G0603-0400 Rev.4.00 Feb 06, 2007 Features • Low Power consumption Low reverse leak current and high speed (Low capacitance). • Lineup of Environmental friendly Halogen free type (HSD226-N)

Contextual Info: HD74HCT640 Octal Bus Transceivers with inverted 3-state outputs Octal Bus Transceivers (with 3-state outputs) REJ03D0672–0300 (Previous ADE-205-562A) Rev.3.00 Mar 30, 2006 Description The HD74HCT640 has one active low enable input (G), and a direction control (DIR). When the DIR input is high,

Contextual Info: FS10ASJ-2 High-Speed Switching Use Nch Power MOS FET REJ03G1408-0200 Previous: MEJ02G0061-0101 Rev.2.00 Aug 07, 2006 Features • • • • • Drive voltage : 4 V VDSS : 100 V rDS(ON) (max) : 0.19 Ω ID : 10 A Integrated Fast Recovery Diode (TYP.) : 95 ns

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: TBB1017 Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier REJ03G1469-0100 Rev.1.00 Aug 07, 2006 Features • • • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Very useful for total tuner cost reduction.

Contextual Info: HD74HCT620, HD74HCT623 Octal Bus Transceivers with inverted 3-state outputs Octal Bus Transceivers (with 3-state outputs) REJ03D0671–0200 (Previous ADE-205-561) Rev.2.00 Mar 30, 2006 Description This octal bus transceiver is designed for asynchronous two-way communication between data buses. The control

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: 2SK3214 Silicon N Channel MOS FET High Speed Power Switching REJ03G1093-0400 Rev.4.00 May 15, 2006 Features • Low on-resistance RDS = 130 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A

Contextual Info: RQA0003DNS Silicon N-Channel MOS FET REJ03G0584-0300 Rev.3.00 Oct 12, 2006 Features • High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 19 dB, PAE = 65% f = 520 MHz • Small Outline Package (WSON0303-2: 3.0 x 3.0 × 0.8mm) Outline

Contextual Info: HSB83YP Silicon Epitaxial Planar Diode for High Voltage Switching REJ03G0545-0200 Rev.2.00 Jan 07, 2009 Features • High reverse voltage. VR = 250V • CMPAK- 4 package which has two devices parallel connection, is suitable for high density surface mounting.

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: HD74LS390 Dual Decade Counters REJ03D0485-0400 Rev.4.00 May 10, 2006 This circuit contains eight master-slave flip-flops and additional gating to implement two individual four-bit counters. The HD74LS390 incorporates dual divide-by-two and divide-by-five counters, which can be used to implement cycle

Contextual Info: 2SK3391 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0209-0300 Rev.3.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, ηadd = 58% min. f = 836 MHz • Compact package capable of surface mounting

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid