578XCX
Abstract: avalanche photodiode bias and high voltage
Contextual Info: Product Bulletin ERM 578XCX 10 Gb/s High Gain Avalanche Photodiode Optical Receiver Modules Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vee = -5.2V All specifications without connector. Parameter Measurement
|
Original
|
578xcx10gb/savalanche photodiode bias and high voltage |
PDF
|
InGaAs Epitaxx APD
Abstract: receiver avalanche 1550 fiber 2.5 EPITAXX erm epitaxx apd 10gb 10 gb APD receiver avalanche photodiode ghz avalanche photodiode DWDM InGaAs apd photodiode 10 gb PIN receiver avalanche photodiode receiver
Contextual Info: Product Bulletin ERM 578XCX 10 Gb/s High Gain Avalanche Photodiode Optical Receiver Modules Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vee = -5.2V All specifications without connector. Parameter APD Breakdown
|
Original
|
578xcxingaas epitaxx apdreceiver avalanche 1550 fiber 2.5epitaxx erm+7epitaxx apd 10gb10 gb apd receiveravalanche photodiode ghzavalanche photodiode dwdmingaas apd photodiode10 gb pin receiveravalanche photodiode receiver
|
PDF
|