56GHZ Search Results

Contextual Info: VMMK-2503 1 to 12 GHz GaAs Wideband Amplifier in Wafer Level Package Data Sheet Description Features Avago’s VMMK-2503 is an easy-to-use broadband, high linearity amplifier in a miniaturized wafer level package WLP . The wide band and unconditionally stable performance makes this amplifier suitable as a gain block or a

Contextual Info: VMMK-2203 0.9-11 GHz E-pHEMT Wideband Amplifier in Wafer Level Package Data Sheet Description Features Avago Technologies has combined its industry leading E-pHEMT technology with a revolutionary wafer level package WLP . • 1 x 0.5 mm Surface Mount Package

Contextual Info: RF & Protection Devices Board Name BFP 540ESD Evalboard Products Description Order No. BFP 540ESD A low-cost, low-current broadband UHF low noise amplifier with the ESD-robust BFP 540ESD RF transistor. BFP540ESD board This board shows the ESD-robust BFR 460L3 board in ISM and

bc 5478

Abstract: VMMK-1225-TR1G VMMK VMMK-1225
Contextual Info: VMMK-1225 0.5 to 26 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading EpHEMT technology with a revolutionary chip scale package. The VMMK-1225 can produce an LNA with high dynamic

LS 1316

Abstract: 78570 bc 5478 LGS 9611
Contextual Info: VMMK-1225 0.5 to 26 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1225 can produce an LNA with high dynamic range, high gain and low noise figure that

132-079

Abstract: Avago 3305
Contextual Info: VMMK-2103 0.5 to 6 GHz Bypass E-pHEMT LNA in Wafer Level Package Data Sheet Description Features Avago’s VMMK-2103 is an easy-to-use GaAs MMIC bypass LNA that offers good noise figure and flat gain from 0.5 to 6 GHz in a miniaturized wafer-level package WLP . The

Contextual Info: VMMK-2203 0.9-11 GHz E-pHEMT Wideband Amplifier in Wafer Level Package Data Sheet Description Features Avago Technologies has combined its industry leading E-pHEMT technology with a revolutionary wafer level package WLP . • 1 x 0.5 mm Surface Mount Package

HP07

Contextual Info: CHA7015 5-6GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA7015 is a C-band monolithic threestage power amplifier. Its design is based on a symmetrical arborescent topology with on-chip matching networks. • Frequency range : 5-6GHz

BFP740F

Abstract: LNA in WLAN 04023J0R3ABS TRANSISTOR 10GHZ LQP10A WLAN Low frequency amplifier report GJM155
Contextual Info: Technical Report, 2009-Apr-20 Technical Report LNA using the BFP740F for WLAN 5150-5825 MHz Application Technical Report <TR129> Device: BFP740F Application: LNA for WLAN 5150-5825 MHz Application

dr 25 germanium diode

Abstract: BGA758 mipi PCB layout INFINEON application note BGA758L7 C166 IEC-61000-4-2 LQW15 wlan amplifier bias circuit ghz wlan RECEIVER CIRCUIT DIAGRAM
Contextual Info: BGA758L7 BGA758L 7 Lo w Noi s e Amplifi er f or 5 - 6 G H z W L A N / Wi M A X A p p l i c a t i o n s Application Note AN188 Revision: Rev. 1.0 2010-02-20 RF and Protecti on Devi c es Edition 2010-03-10 Published by Infineon Technologies AG 81726 Munich, Germany

A004R

Abstract: MM20 RO4350 VMMK-1218 VMMK-1218-BLKG 802.11abgn
Contextual Info: VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that

RO4350

Abstract: VMMK-2103
Contextual Info: VMMK-2103 E-pHEMT Amplifier in a Wafer Scale Package 0.5 - 6GHz Product Brief Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The GaAsCap wafer scale sub-miniature leadless package is small and ultra thin, yet can be handled

VMMK-2503

Abstract: RO4350 STENCIL PRINTER
Contextual Info: VMMK-2503 E-pHEMT Amplifier in a Wafer Scale Package 1 - 12GHz Product Brief Description Features Avago Technologies has combined its industry leading EpHEMT technology with a revolutionary chip scale package. The GaAsCap wafer scale sub-miniature leadless package is small and ultra thin yet can be handled and placed

Contextual Info: LX5503 I N T E G R A T E D InGaP HBT 5-6GHz Power Amplifier P R O D U C T S P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For +18dBm OFDM output power 64QAM, 54Mbps , the PA provides a very low EVM (Error-Vector Magnitude) of 4%, and consumes less than 200mA total DC current.

Contextual Info: VMMK-2103 0.5 to 6 GHz Bypass E-pHEMT LNA in Wafer Level Package Data Sheet Description Features Avago’s VMMK-2103 is an easy-to-use GaAs MMIC bypass LNA that offers good noise figure and flat gain from 0.5 to 6 GHz in a miniaturized wafer-level package WLP . The

Contextual Info: VMMK-2203 E-pHEMT Amplifier in a Wafer Scale Package Preliminary Datasheet GaAsCap 0402, 1.0mm x 0.5mm x 0.25mm Description Pin Connections Top View Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The GaAsCap wafer scale

Contextual Info: VMMK-1225 0.5 to 26 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1225 can produce an LNA with high dynamic range, high gain and low noise figure that

phase shifter 5GHz

Abstract: AN0017 CHP4014-QEG 5Ghz phase shifter SMD phase shifter
Contextual Info: CHP4014-QEG RoHS COMPLIANT 5-6GHz 6-bit Phase-Shifter GaAs Monolithic Microwave IC Description The CHP4014-QEG is a 6-bit digital phase shifter MMIC with a 0°-360° range. It is designed for 5 to 6GHz frequency range applications. The circuit supports a variety

VAT-10

Contextual Info: FIXED ATTENUATORS Designer's Kit K2-VAT+ MINI-CIRCUITS DESIGNER'S KITS THE SOLUTION ! DC to 6GHz VAT+ Features • Wideband, 50 Ω • Input power 1W max. • 1 to 10dB attenuation • SMA Male and Female connectors $ only 99 Rugged Unibody construction • Length less than 1.5"

VAT-10W2

Abstract: VAT-20W2 VAT-30W2
Contextual Info: FIXED ATTENUATORS Designer's Kit K1-VAT2+ MINI-CIRCUITS DESIGNER'S KITS THE SOLUTION ! DC to 6GHz VAT-W2+ Features Wideband, 50 Ω • Input power 2W max. • 3,6,10,20 and 30dB attenuation • Rugged Unibody construction • SMA Male and Female connectors

Contextual Info: AN11007 Single stage 5-6 GHz WLAN LNA with BFU730F Rev. 2 — 20 November 2012 Application note document information Info Content Keywords BFU730F, LNA, 802.11a & 802.11n MIMO WLAN Abstract The document provides circuit, layout, BOM and performance information

Contextual Info: LX5503 InGaP HBT 5-6GHz Power Amplifier TM P RODUCTION D ATA S HEET For +18dBm OFDM output power 64QAM, 54Mbps , the PA provides a very low EVM (Error-Vector Magnitude) of 4%, and consumes less than 200mA total DC current. The LX5503 is available in a 16-pin

Contextual Info: P35 P35-4721-000-200 GaAs MMIC POWER AMPLIFIER, 5-6GHz Features • • • • • • 24 dB Gain typical F20 MESFET technology 24dBm Output Power High, Medium 1, Medium 2 & Low Gain States PAE Max 25% Description The P35-4721-000-200 is a high performance Gallium Arsenide Power Amplifier MMIC. It is

VAT-10

Contextual Info: FIXED ATTENUATORS Designer’s Kit K2-VAT+ MINI-CIRCUITS DESIGNER’S KITS THE SOLUTION ! DC to 6GHz VAT+ Features • Wideband, 50Ω • Input power 1W max. • 1 to 10dB attenuation • SMA Male and Female connectors 99 $ only Rugged Unibody construction