564 FET Search Results

2sk2955

Abstract: ADE-208-564 Hitachi DSA002780
Contextual Info: 2SK2955 Silicon N Channel MOS FET High Speed Power Switching ADE-208-564 Target Specification 1st. Edition Features • Low on-resistance RDS = 0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 2SK2955 Absolute Maximum Ratings Ta = 25°C

2SK2955

Contextual Info: 2SK2955 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-564 Target Specification 1st. Edition Features • L ow on-resistance R ds = 0.010 Q typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 1. Gate

DALE R1F resistor

Abstract: DALE R1F MAX1647 MBRS340T3 TPSE686M020R0150 35CV150GX IRF7303 MAX1648 MAX745 MAX745EVKIT
Contextual Info: MAX745 Evaluation Kit _Component Suppliers SUPPLIER* AVX Dale-Vishay International Rectifier IRC Motorola Sanyo Sumida PHONE FAX 803 946-0690 (402) 564-3131 (310) 322-3331 (512) 992-7900 (602) 303-5454 (619) 661-6835 (847) 956-0666 (803) 626-3123

SCN2861

Abstract: NS32CG16V-15 eprom 27c512 IMPLEMENTATION of 4-BIT LEFT SHIFT BARREL SHIFTER bitblt NS32202 27C256 27C512 DP8511 SCN2681
Contextual Info: National Semiconductor Application Note 564 June 1989 1 0 INTRODUCTION This design is for a stand alone NS32CG16 execution vehicle The design includes the NS32081 Floating Point Unit DP8511 BitBlt Processing Unit NS32202 Interrupt Control Unit and SCN2681 Dual channel serial interface MONCG a

transistor A 564

Abstract: tranzorb maxim rs232 protection overvoltage tranzorb diode Overvoltage protection Tranzorb AN564 APP564 DS232A MAX232A tranzorbs
Contextual Info: Maxim > App Notes > INTERFACE CIRCUITS PROTECTION AND ISOLATION Keywords: RS-232, rs232, tranceivers, EIA/TIA-232, ESD, protection diodes Apr 06, 2001 APPLICATION NOTE 564 Tech Brief 10: ESD Considerations for RS-232 Drivers Abstract: Technical brief suggests ESD protection schemes for RS-232 transceivers. Basic diode clamps,

S1C17564

Abstract: hx 630 S1C17 S1C17554 high power thyristor REGULATOR IC 7812 SMD
Contextual Info: CMOS 16-BIT SINGLE CHIP MICROCONTROLLER S1C17554/564 Technical Manual Rev.1.0 NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any liability

S1C17564

Abstract: murata filter 10.7
Contextual Info: CMOS 16-BIT SINGLE CHIP MICROCONTROLLER S1C17554/564 Technical Manual Rev.1.3 NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any liability

rtd pt100 interface to 8051

Abstract: 24V 20A SIEMENS battery charger LM2560 smd 58a transistor 6-pin pic 16f84 PWM circuit scr control light intensity using 8051 8051 microwave oven design of FM transmitter final year project project pic 16f84 pwm "white led" 5mm
Contextual Info: INDEX Order Code Description _ 102-271 794-740 102-246 794-752 101-930 102-283 101-886 101-953 _ _ 688-137 688-149 _ _ 597-387 705-536 473-728 473-753 473-730 473-741 473-881 _ _ _ 690-648 690-703 690-636 791-180 _ 791-805 _ 101-564 101-540 101-552 101-515

S1C17564

Abstract: thyristor PSR 406
Contextual Info: CMOS 16-BIT SINGLE CHIP MICROCONTROLLER S1C17554/564 Technical Manual Rev.1.1 NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any liability

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC54/74HC564 Octal 3-State Inverting D Flip-Flop High-Perform ance Silicon-Gate C M O S The M C 54/74H C 564 is identical in pinout to the LS564. The device inputs are com patible w ith standard C M O S outputs, with pullup resistors, th e y are

P40-P45

Contextual Info: CMOS 16-BIT SINGLE CHIP MICROCONTROLLER S1C17554/564 Technical Manual Rev.1.2 NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any liability

ROM 2764

Abstract: ASM800 Z84C15
Contextual Info: #RRNKECVKQP 0QVG = WR H= &RQYHUVLRQ #0 l  <K.1  +PE  < VQ G< %QPXGTUKQP 6#$.' 1 %106'065 #$564#%6 )GPGTCN 1XGTXKGY 

HD64F7046F50

Abstract: Hitachi DSA0059 Nippon capacitors REJ10B0152
Contextual Info: REJ09B0270-0400 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 32 SH7046 Group Hardware Manual

HD64F7046FW50

Abstract: REJ09B0171-0500O HD6437048 HD6437148 HD64F7046 SH7046 REJ10B0152 Nippon capacitors
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: AOC4810 30V Common-Drain Dual N-Channel MOSFET General Description Product Summary The AOC4810 uses advanced trench technology to provide excellent RSS ON , low gate charge and operation with gate voltages as low as 4.5V while retaining a 20V VGS(MAX) rating. It

Contextual Info: LF147/LF347 National Semiconductor LF147/LF347 Wide Bandwidth Quad JFET Input Operational Amplifiers General Description Features The LF147 is a low cost, high speed quad JFET input opera­ tional amplifier with an internally trimmed input offset volt­ age BI-FET II technology . The device requires a low

FLK022XV

Contextual Info: FLK022XP, FLK022XV Füjrrsu GaAs FET and HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 24.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 32% (Typ.) Proven Reliability DESCRIPTION The FLK022XP, and FLK022XV chip is a pow er G aAs FET that is

FLK022

Abstract: FLK022XV GaAs FET HEMT Chips FLK022XP
Contextual Info: FLK022XP, FLK022XV fujÏtsu G a A s F E T a n d H E M T Chips FEATURES • • • • High Output Power: P-|dB = 24.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: riadd = 32%(Typ.) Proven Reliability DESCRIPTION The FLK022XP, and FLK022XV chip is a power GaAs FET that is

FLL300IL-3

Abstract: FLL300IL-1 FLL300IL-2
Contextual Info: FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P ^ b = 44.5dBm Typ. • High Gain: G 1dB = 12.0dB (Typ.)@1,8GHz (FLL300IL-2) • High PAE: r iadd = 44% (Typ.) • Proven Reliability • Hermetically Sealed Package

IC NE564

Abstract: telephone NT NE554 NE554 NE564 equivalent NE564 ana 618 equivalent KDK TRANSISTOR pll 564
Contextual Info: Application note Philips Semiconductors Linear Products Clock regenerator with crystal-controlled phase-locked loop VCO NE564 INTRODUCTION . “second-order” system . An RC series filter com bination will cause a ie ad-lag condition that w ill perm it dyna m ic selectivity, along with

FLL300IL-3

Abstract: FLL300IL-2 FLL300IL-1 FLL30 J10-14
Contextual Info: FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2) High PAE: ηadd = 44% (Typ.) Proven Reliability Hermetically Sealed Package

FLL300IL-2

Abstract: J1014 FLL300IL-1 FLL300IL-3 fujitsu l-band power fets
Contextual Info: FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2) High PAE: ηadd = 44% (Typ.) Proven Reliability Hermetically Sealed Package

FLL300IL-2

Abstract: FLL300IL-1 FLL300IL-3 1200 - 1400 MHz L-Band Applications
Contextual Info: FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2) High PAE: ηadd = 44% (Typ.) Proven Reliability Hermetically Sealed Package

Contextual Info: FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2) High PAE: ηadd = 44% (Typ.) Proven Reliability Hermetically Sealed Package