55KT Search Results

j130 fet

Abstract: 33 J 250 capacitor transistor 1000W 1000uf electrolytic capacitor silicon carbide xl33 transistor 406 specification
Contextual Info: 0405SC-1000M Rev B 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55KT FET Common Gate 1 = Drain 2 = Gate 3 = Source The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON

1000uf electrolytic capacitor

Abstract: capacitor 60 pF silicon carbide 33 J 250 capacitor Static Induction Transistor SIT "Static Induction Transistor" transistor 406 specification j130 fet
Contextual Info: 0405SC-1000M Rev A 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55KT FET Common Gate 1 = Drain 2 = Gate 3 = Source The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON

static induction transistor SIT

Abstract: "silicon carbide" FET 1000uf electrolytic capacitor SIT Static Induction Transistor transistor 406 specification sit transistor 0405SC-1000M "Static Induction Transistor" x2404 1000UF 20V CAPACITOR
Contextual Info: 0405SC-1000M Rev C 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55KT FET Common Gate 1 = Drain 2 = Gate 3 = Source The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON

MDS350L

Abstract: 1030 PULSED
Contextual Info: R.3.A.992605-HERIC MDS350L 350 Watts, 45 Volts, Pulsed Avionics 1030 - 1090 MHz ADVANCED ISSUE GENERAL DESCRIPTION CASE OUTLINE 55KT Style 1 The MDS350L is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030 - 1090 MHz. The

1458

Abstract: L-Band 1200-1400 MHz IC 1458
Contextual Info: 1214 - 300 300 Watts - 50 Volts, 100µs, 10% Radar 1200 - 1400 MHz GENERAL DESCRIPTION The 1214-300 is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at one hundred microseconds pulse width, ten percent duty factor across the band 1200 to

TAN300

Contextual Info: TAN 300 300 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The TAN 300 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven

700 v power transistor

Contextual Info: TPR 700 700 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 700 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The

Contextual Info: TPR 500A 500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 500A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization and diffused ballasting for proven

J3 transistor

Abstract: ADVANCED POWER TECHNOLOGY
Contextual Info: 0910-300Rel 1 0910– 300 300 Watts - 50 Volts, 50µs, 2% Radar 870 - 1000 MHz Preliminary GENERAL DESCRIPTION The 0910-300 is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at fifty microseconds pulse

TCS450

Contextual Info: TCS450 450 Watts, 45 Volts, Pulsed Avionics 1030 MHz GENERAL DESCRIPTION The TCS450 s a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz, with the pulse width and duty required for TCAS applications. The device has gold

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

electrolytic capacitor, .1uF

Abstract: silicon carbide electrolytic capacitor, 1uF Static Induction Transistor SIT Static Induction Transistor ATC capacitor 56pf
Contextual Info: 0150SC-1250M Rev A 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR SIT capable of

df transistor

Abstract: 55KT
Contextual Info: TPR 500A 500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 500A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization and diffused ballasting for proven

220MF

Abstract: 17JJ L-Band 1200-1400 MHz
Contextual Info: •r T. A A d van ced R O W ER Te c h n o lo g y R F 1214 300 - 300 W atts - 50 Volts, 100|is, 10% Radar 1200- 1400 M Hz G EN ERA L DESCRIPTION T he 1214-300 is an internally m atchcd, COMMON B A SE tran sisto r capable o f pro v id in g 300 W atts o f pulsed RF output pow er at one hundred

0150SC-1250M

Contextual Info: 0150SC-1250M Rev B 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR SIT capable of

LE79Q2281

Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security

1030

Abstract: MDS170L 1030 PULSED
Contextual Info: MDS170L 170 Watts, 36 Volts, Pulsed Avionics 1030/1090 MHz GENERAL DESCRIPTION The MDS170L is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030 - 1090 MHz. The transistor includes input and output prematch for broadband performance. The

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

MDS400

Contextual Info: MDS400 400 Watts Pk, 45 Volts, 32µs, 2% Avionics 1030-1090 MHz GENERAL DESCRIPTION CASE OUTLINE The MDS400 is a COMMON BASE transistor capable of providing 400 Watts Peak, Pulsed, RF Output Power over the band 1030-1090 MHz. The transistor includes double input prematching for full broadband capability. Gold

JTDA150A

Contextual Info: JTDA 150A 145 Watts, 36 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The JTDA-150A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The transistor includes input and output prematch for broadband performance. The

DME 40

Contextual Info: DME 500 500 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The DME 500 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The

1718-32L

Contextual Info: 1718-32L 32 Watt - 24 Volts, Class C Microwave 1750 - 1850 MHz GENERAL DESCRIPTION CASE OUTLINE The 1718-32L is a COMMON BASE transistor capable of providing 32 Watts of Class C, RF output power over the band 1750-1850 MHz. This transistor is designed for Microwave Broadband Class C amplifier

RF 150M

Abstract: 0910-150M 150M Advanced Power Technology
Contextual Info: 0910-150M 0910 – 150M 150 Watts - 48 Volts, 150µs, 5% Radar 890 - 1000 MHz GENERAL DESCRIPTION The 0910-150M is an internally matched, COMMON BASE transistor capable of providing 150 Watts of pulsed RF output power at 150 µs pulse width, 5% duty factor across the band 890 to 1000 MHz. This hermetically solder-sealed

1214-110

Abstract: 1214-110M
Contextual Info: 1214-110M 110 Watts - 50 Volts, 330µs, 10% Radar 1200 - 1400 MHz GENERAL DESCRIPTION The 1214-110M is an internally matched, COMMON BASE transistor capable of providing 110 Watts of pulsed RF output power at 330 µs pulse width, 10% duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed