55C DIODE Search Results

DIODE BZX

Abstract: BZX5V1 BZX55C6V2 spice model zener BZX 55c 5v1 BZX30 diode zener 5v1 55c MODEL ZENER 5V1 diode zener 3v6 bzx 55c Zener diode bzx diode zener BZX 55C
Contextual Info: BZX55_PSpice VISHAY Vishay Semiconductors BZX55 Spice Parameters BZX55C3V6 BZX55C5V1 * Technology: DISCRETE DEVICE * Device: Zener Diode BZX 55C 3V6 * Type: Typical nom * Model established: 12.11.1996, by S.Reuter, TM1iC63-HN * Wafer: * Remarks: Macro model

Contextual Info: B ZX 55C Vishay Telefunken ▼ Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Very high stability • Low noise • Available with tighter tolerances Applications 94 9367 Voltage stabilization

21PT60

Abstract: 21pt20 IR 21PT10
Contextual Info: INTERNATIONAL RECTIFIER 4855^52 SS DE |4flSS4SE 0 0 0 ^ 3 1 fl D 55C 04 93 1 INTERNATIONAL RECTIFIER Data Sheet No. PD-2.085 INTERNATIONAL RECTIFIER IOR SiPT SERIES SO Amp Encapsulated Rectifier Diodes i Major Ratings and Characteristics 21PT Units • f AV

Contextual Info: INTERNATIONAL SS rectifier DE I 4Ö5S4S2 4855452 INTERNATIONAL RECTIFIER □□D4C1G3 55C 04903 D Data Sheet No. PD-2.005C 7 '- ¿ > INTERNATIONAL RECTIFIER ^ ( 3 IOR 1N4D01 S E R IE S i.OAmp Silicon Rectifier Diodes Description/Features Major Ratings and Characteristics

telefunken ta 250

Abstract: X104K
Contextual Info: B ZM 55C Vishay Telefunken ▼ Silicon Epitaxial Planar Z-Diodes Features • Saving space • Hermetic sealed parts • Fits onto SOD 323 / SOT 23 footprints • Electrical data identical BZT55C. / TZMC. • Very sharp reverse characteristic • Low reverse current level

1n4816

Abstract: 1N5054 1N5052 PD2004C 10D10 1n5053
Contextual Info: INTERNATI ONAL RECTIFIER 4855452 SS d ËTJ 4ÖSS4S5 D D D 4 IiOb D 55C 04906 INTERNATIONAL R EC TIFIER Data Sheet No. PD-2.004C INTERNATIONAL RECTIFIER I O R 1N4816,1N5052,1QD, SOD SERIES 1.5 and 2 .0 Amp Molded Silicon Rectifier Diodes Description/Features

4AF2

Abstract: 4af05 4af1 ir 4AF Series 21PT20 4AF2 IR 636A2 21PT40 21PT 21PT10
Contextual Info: INTERNA TIO NAL RECTIFIER 4655^52 55 INTERNATIONAL DE § 4flSS452 O D O M ' m 55C R EC TIFIER fl f D 04931 Data Sheet No. PD-2.085 INTERNATIONAL RECTIFIER IO R SiPT SERIES SO Amp Encapsulated Rectifier Diodes Major Ratings and Characteristics Units •f AV

35MB60A

Abstract: 35MB40A 100JB2L 36MB40A 100JB10L 26MB 250JB10L 35MB20A 35MB10A 35MB100A
Contextual Info: SS INTERNATIONAL RECTIFIER 4855452 INTERNATIONAL RECTIFIER DE^I4055452 OOOSlfl? 55C 05167 D Data Sheet No. PD-4.007D INTERNATIONAL RECTIFIER IÖ R 100JB, S50JB, 26MB, 35MB ANO 36MB SERIES 10 to 35 amp rectifier bridges Description/Features Major Ratings and Characteristics

oms 450

Abstract: IRD3899 IRD3900 IRD3901 IRD3903 IRD3909 IRD3913 AV2030 b101 diode g810
Contextual Info: SS INTERNATIONAL RECTIFIER 4855452 d Ë T | 4ASS4SS DDD4TÌ3 Ö D 55C 0 4 9 9 3 INTERNATIONAL RECTIFIER Data Sheet No. PD-2.092 Y ' INTERNATIONAL RECTIFIER IÖR of ~ < 1 IRD3899, IRD3909 SERIES 8 0 and 3 0 Amp Fast Recovery Rectifier Diodes Description Major Ratings and Characteristics

1N2071

Abstract: 1N2070 1N2069 1N2069A international rectifier silicon rectifier
Contextual Info: INTERNATIONAL RECTIFiER S5 '48 5 5 4 5 2 I N T E R N A T I O N A L D E | 4Ö554S2 55C RECTIFIER 0Ö04T00 04900 Data Sheet No. PD-2.003C INTERNATIONAL RECTIFIER IOR 1NS069, A SERIES 750 mA Silicon Rectifier Diodes Major Ratings and Characteristics 1N2069A Units

1N5401

Abstract: 1N5401+equivalent
Contextual Info: INTERNATIONAL RECTIFIER 4855452 SS IN TER N ATIO N A L DE|4flS5452 O O C m Q ì 55C R E C T IF IE R 4 | 04909 D Data Sheet No. PD-2.083 àt-tsr INTERNATIONAL RECTIFIER IÖR 1N54Ü1 SERIES 3 Amp Medium Power Silicon Rectifier Diodes Major Ratings and Characteristics

Contextual Info: BUK6228-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been

BUK6210-55C

Contextual Info: BUK6210-55C N-channel TrenchMOS intermediate level FET Rev. 2 — 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been

Contextual Info: BUK6210-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 7 September 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been

Contextual Info: BUK662R7-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 7 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been

FULL WAVE RECTIFIER and waveforms

Abstract: s70hf 85hf120 70HF 70HFI 41HF120 86HFR10 70hf120 40HF 40HF10
Contextual Info: SS INTERNATIONAL RECTIFIER 4 8 55 ^ 52 DE | 4ÖS545E 0004c14b □ | 55C INTERNATIONAL R E C T I F I E R 0*t946 Data Sheet No. PD-2.014D INTERNATIONAL RECTIFIER IÖR 40HF, 70HF, 85HF SERIES 4 0 , 7 0 and 85 Amp Power Silicon Rectifier Diodes Major Ratings and Characteristics

Contextual Info: BUK663R5-55C N-channel TrenchMOS FET Rev. 01 — 3 August 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been

1N4822

Abstract: 1N4820 1N5054 IR 20D2 1N4816 10d05 IR 10D4 IR 10D 7 7510D1 1N4817
Contextual Info: INTERNATIONAL RECTIFIER 4855452 SS INTERNATIONAL DE~| 4ÖSS4S5 DDD4clDt. 55C RECTIFIER 04906 D Data Sheet No. PD-2.004C IN T E R N A T IO N A L R E C T IF IE R IÖR <11X14816,1IM5052S10IDSSOD SERIES 1.5 and 8 .0 Amp Molded Silicon R ectifier Diodes Description/Features

4AF2

Abstract: 4AF4 4AF Series 4af1 IR 4af2 B-47PP 4AF2 IR 8AF1 Diode 4AF2 4af1 ir
Contextual Info: ~55 INTERNATIONAL RECTIFIER 4855452 IN T E R N A T IO N A L I F|4fl554SS □DOMciB4 3 55C R E C T IF IE R 04934 Data Sheet No. PD-2.086 r~ o i - t ? ' f ï &i'¿a IOR INTERNATIONAL RECTIFIER 4AF, 8AF SERIES S5 and 50 Amp Pressfit Rectifier Diodes Major Ratings and Characteristics

Contextual Info: BUK6210-55C N-channel TrenchMOS intermediate level FET Rev. 2 — 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been

Contextual Info: BUK654R6-55C N-channel TrenchMOS intermediate level FET Rev. 02 — 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: BUK6507-55C N-channel TrenchMOS logic and standard level FET Rev. 01 — 12 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been

BUK6217-55C

Contextual Info: BUK6217-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 21 September 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been

1060 fet

Contextual Info: BUK6E3R2-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 6 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been