55BT Search Results

in 3003 TRANSISTOR

Abstract: 3003 transistor
Contextual Info: 3003 3 Watts - 28 Volts, Class C Microwave 3000 MHz GENERAL DESCRIPTION CASE OUTLINE 55BT-1, STYLE 1 The 3003 is a COMMON BASE transistor capable of providing 3 Watts Class C, RF output power at 3000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor

3001 transistor

Abstract: 100 watt transistor
Contextual Info: 3001 1 Watt - 28 Volts, Class C Microwave 3000 MHz GENERAL DESCRIPTION CASE OUTLINE 55BT, STYLE 1 The 3001 is a COMMON BASE transistor capable of providing 1 Watts Class C, RF output power at 3000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor

23A003

Contextual Info: 23A003 0.3 Watts, 15 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION CASE OUTLINE 55BT, STYLE 2 B08 The23A003 is a COMMON EMITTER transistor capable of providing 0.3 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

RF TRANSISTOR 1 WATT

Contextual Info: 2010 10 Watt - 28 Volts, Class C Microwave 2000 MHz GENERAL DESCRIPTION CASE OUTLINE 55BT-1, Style The 2010 is a COMMON BASE transistor capable of providing 10 Watts Class C, RF output power at 2000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The

Contextual Info: 101/101A 1 Watt - 28 Volts, Class C Microwave, 500-1200 MHz GENERAL DESCRIPTION CASE OUTLINE The 101/101A is a COMMON BASE transistor capable of providing 1 Watt Class C, RF output power at 500-1200 MHz. Gold Metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The

AFEM-S102

Abstract: 2400 ie bt 13 g SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER
Contextual Info: AFEM-S102 2.5 GHz WiFi/BT FEM Data Sheet Description Features Avago Technologies AFEM-S102 FEM integrates an SP3T antenna switch, TX Path Coupler and FBAR Co-Existence Filter for applications with IEEE 802.11 b/g/n WiFi and Bluetooth modulation. The FEM exhibits low Insertion

fe 8622

Abstract: 422-371 23A025 521603 18896
Contextual Info: 23A025 2.5 Watts, 20 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A025 is a COMMON EMITTER transistor capable of providing 2.5 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

23A017

Abstract: 33797 4561 140452
Contextual Info: 23A017 1.7 Watts, 20 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A017 is a COMMON EMITTER transistor capable of providing 1.7 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

100 watt transistor

Contextual Info: 2001 1.0 Watt - 28 Volts, Class C Microwave 2000 MHz GENERAL DESCRIPTION CASE OUTLINE The 2001 is a COMMON BASE transistor capable of providing 1 Watts Class C, RF output power at 2000 MHz. Gold Metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor

2 watt rf transistor

Contextual Info: 2003 3 Watt - 28 Volts, Class C Microwave 2000 MHz GENERAL DESCRIPTION CASE OUTLINE The 2003 is a COMMON BASE transistor capable of providing 3 Watts Class C, RF output power at 2000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor is

55bt

Contextual Info: 1 — - j '— -T — 01 1 1 1 1 J DIM MILLIMETER A 20.32 14.27 B C D 18.03 5.8 4 E F G H 1 3.05 1.02 x 45° 5.8 4 4.57 0.13 J K M N 3.30 1.52 1.27 3.30 DIA K TOL .13 .13 INCHES .800 .562 TOL .005 .005 MIN .13 .710 .230 MIN .005 .130 .060 .050 .130 DIA TT

67334

Abstract: data sheet IC 74266 74266 IC 74160 IC 74160 DATA SHEET ic 74266 data sheet IC 7474 IC 4614 IC 7474 datasheet 55295
Contextual Info: 23A005 0.5 Watts, 20 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A005 is a COMMON EMITTER transistor capable of providing 0.5 Watt of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold

msc 1900 2900

Abstract: 02580 4435 ic
Contextual Info: 80143 1.0 Watts, 15 Volts, Class A Linear to 2300MHz GENERAL DESCRIPTION The 80143 is a common emitter transistor capable of providing 1.0Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold metalization and diffused ballasting to provide high

transistor 3005

Contextual Info: 3005 5 Watts - 28 Volts, Class C Microwave 3000 MHz GENERAL DESCRIPTION CASE OUTLINE The 3005 is a COMMON BASE transistor capable of providing 5 Watts Class C, RF output power at 3000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor

transistor oc 76

Abstract: 23A017
Contextual Info: 23A017 1.7 Watts, 20 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A017 is a COMMON EMITTER transistor capable of providing 1.7 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

Contextual Info: 2005 5.0 Watt - 28 Volts, Class C Microwave 2000 MHz GENERAL DESCRIPTION CASE OUTLINE The 2005 is a COMMON BASE transistor capable of providing 5 Watts Class C, RF output power at 2000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor

MIL-C-55302

Abstract: 600-1-9P 610-1-25P 600-1-17SD16 600-1-17P 615-1-23P 600-1-33SD16 ST600-1-41P1 Soldering profile S_6001 615-1-23SD16
Contextual Info: 610-1-25SD16 M55302/B-02 600-1-77SD16 (M55302/6-06) 615-1-23SD16 (M55302/2-04) 610-1-25P (M55302/7-02) 600-1-77P (M55302/4-06) 615-1-23 P (M55302/1-04) FEATURES • A micro-miniature, right angle plug and receptacle connector designed for use with single sided, double sided and multi-layered board-to-board applications.

4435 ic

Abstract: data sheet IC 4435 IC 2272 DATASHEET IC 7446 1140-17 02580 2482 TRANSISTOR data sheet ic 7446 IC 7446 A 158314
Contextual Info: 80143 1.0 Watts, 15 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 80143 is a COMMON EMITTER transistor capable of providing 1.0 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

23A008

Abstract: 23A008-2 305303 69099 75902 79121
Contextual Info: 23A008 0.5 Watts, 20 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A008 is a COMMON EMITTER transistor capable of providing up to 0.5 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

MG1007-42

Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Contextual Info: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are

23A017

Contextual Info: U.E.IIELI ., fine. C/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 23A017 1.7 Watts, 20 Volts, 280 mA Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A017 is a COMMON EMITTER transistor capable of providing 1.7

IC 7486

Abstract: ic 7435 7486 7486 ic C 4927 IC 4094 ic 4580 ic 7475 23A003 transistor A 1264
Contextual Info: 23A003 0.3 Watts, 15 Volts, Class A Linear to 2300MHz GENERAL DESCRIPTION The 23A003 is a common emitter transistor capable of providing 0.3Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold metalization and diffused ballasting to provide high

SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER

Abstract: directional coupler wifi schematic
Contextual Info: AFEM-S102 2.5 GHz WiFi/BT FEM Data Sheet Description Features Avago Technologies AFEM-S102 FEM integrates an SP3T antenna switch, TX Path Coupler and FBAR Co-Existence Filter for applications with IEEE 802.11 b/g/n WiFi and Bluetooth modulation. The FEM exhibits low Insertion