55B DIODE Search Results

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS TM transistor Product specification October 1999 Philips Semiconductors N-channel logic level Product specification TrenchMOS(TM) FEATURES transistor SYMBOL PSMN005-55B;

BUK75

Abstract: BUK754R0-55B BUK764R0-55B
Contextual Info: BUK754R0-55B; BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 04 — 4 October 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.

Contextual Info: BUK75/764R0-55B TrenchMOS standard level FET Rev. 02 — 30 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.

Contextual Info: BUK95/964R2-55B TrenchMOS logic level FET Rev. 02 — 8 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.

BUK9212-55B

Contextual Info: BUK9212-55B TrenchMOS logic level FET Rev. 02 — 12 December 2003 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

BUK7212-55B

Contextual Info: BUK7212-55B TrenchMOS standard level FET Rev. 01 — 23 January 2004 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

BUK9Y40-55B

Abstract: 03np80
Contextual Info: BUK9Y40-55B N-channel TrenchMOS logic level FET Rev. 01 — 28 May 2004 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

Contextual Info: 3UALITY T E CH N OL O GI E S CORP S7E ]> 74bbfl51 □□□430b 55b I ÖTY European “Pro Electron” Registered T y p e s _ CNY32 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e CNY32 is a gallium arsenide, in frared em itting d iode

D 795 A

Contextual Info: BUK95/96/9E06-55B TrenchMOS logic level FET Rev. 02 — 10 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology, featuring very low

Contextual Info: BUK7Y12-55B N-channel TrenchMOS standard level FET Rev. 03 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

Contextual Info: BUK7Y18-55B N-channel TrenchMOS standard level FET Rev. 04 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

BUK95

Abstract: BUK9506-55B 55B4
Contextual Info: BUK9506-55B N-channel TrenchMOS FET Rev. 04 — 23 July 2009 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate

55B4

Abstract: BUK95 BUK9E06-55B
Contextual Info: BUK9E06-55B N-channel TrenchMOS FET Rev. 04 — 22 July 2009 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate

55b1

Abstract: transistor 55B1
Contextual Info: BUK7210-55B N-channel TrenchMOS standard level FET Rev. 01 — 11 December 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

55B3

Abstract: BUK9Y40-55B
Contextual Info: BUK9Y40-55B N-channel TrenchMOS logic level FET Rev. 03 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

CM74

Abstract: tl780-1sc 199S TL780
Contextual Info: TL780 SERIES POSITIVE VOLTAGE REGULATORS ^ _ S LVS Q 55B -A P R IL 1981 - REVISED AUG UST 1995 • ±1% Output Tolerance at 25°C • +2% Output Tolerance Over Full Operating Range kc package TOP VIEW • Thermal Shutdown • Internal Short-Circuit Current Limiting

K 2843 fet transistor

Abstract: transistor k 2843
Contextual Info: BUK7Y35-55B N-channel TrenchMOS standard level FET Rev. 04 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

Contextual Info: International i“R Rectifier 4ÔSS4S2 HEXFET P o w e r M O S F E T INTERNATIONAL • • • • • 0014760 55b IINR PD-9.376H IRF840 RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements

BUK75

Abstract: BUK7506-55B
Contextual Info: BUK7506-55B N-channel TrenchMOS standard level FET Rev. 02 — 21 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

BUK95

Abstract: BUK964R2-55B 03ng55
Contextual Info: BUK964R2-55B N-channel TrenchMOS logic level FET Rev. 03 — 4 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

55b diode

Abstract: BUK95 BUK9512-55B
Contextual Info: BUK9512-55B N-channel TrenchMOS logic level FET Rev. 02 — 8 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

55B4

Abstract: BUK95 BUK9606-55B
Contextual Info: BUK9606-55B N-channel TrenchMOS FET Rev. 04 — 23 July 2009 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate

Contextual Info: BUK9Y12-55B N-channel TrenchMOS logic level FET Rev. 04 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

transistor BUK9508

Abstract: BUK9508-55B BUK95
Contextual Info: BUK9508-55B N-channel TrenchMOS logic level FET Rev. 03 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to