555 JRC Search Results
555 JRC Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| ICM7555MTV/883 | Rochester Electronics LLC | ICM7555MTV/883 - Dual marked (5962-8950303GA) |
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| AM9513ADIB | Rochester Electronics LLC | AM9513 - Programmable Timer, 5 Timers, MOS, CDIP40 |
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| MD8253/BJA | Rochester Electronics LLC | 8253 - Interval Timer, Programmable - Dual marked (5962-8752002JA) |
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| MD8254/B | Rochester Electronics LLC | 8254 - Programmable Interval Timer |
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| MD82C54/B | Rochester Electronics LLC | 82C54 - CMOS Programmable Timer |
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555 JRC Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
ramp generator 555
Abstract: free ic 555 voltage controlled oscillator ic 555 ,555 timer astable multivibrator ic 741 astable multivibrator monostable multivibrator ic 555 E555 IC 555 as temperature controller NE555 s08 Se5558
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ne555sa555se555500hz+15 | |
information applikation
Abstract: A109D information applikation mikroelektronik B303D Mikroelektronik Information Applikation B222D B260D "halbleiterwerk frankfurt" "Mikroelektronik" Heft mikroelektronik heft
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information applikationa109dinformation applikation mikroelektronikb303d+6 | |
29C010
Abstract: 29C512 AT29C257 AT29C257-12 atmel 728
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g0g23bdat29c25729c01029c512+2 | |
JRC-4101
Abstract: pyle-national JR-36046-A OBZ-824 JRC-4100 IAIO 3Y to106 JKC410V RWF Series JR-610036
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amptrai-250spring104466q651wz-530o+10 | |
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Contextual Info: •HYUNDAI H Y 5 1 1 6 1 0 0 S e r ie s 16Mx1-btt C M O S D R A M DESCRIPTION "The HY5116100 is the new generation and fast dynamic RAM organized 16,777,216x 1-bit. The HY5116100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating |
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16mx1-btthy51161001ad01-10-may94hy5116100jc+3 | |
JRC 555
Abstract: ACP600 JRC 555 D 555 jrc 311 JRC GRM36 NJG1309VB2 ACP9001
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njg1309vb2309vb2i600khzssop20-vb2+9 | |
RAZOG
Abstract: CI 7433 RXKO2 raaak Thyristor pulse transformer AEG asea thyristor pr 16 RXIH 2 ASEA thyristor thyristor aeg asea relay RI
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0040-c527i20razogci 7433+8 | |
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Contextual Info: IDE t I 4302371 ÜÜ13073 1 I HARRIS SE MIC OND SECTOR H A R R HA- 5033/883 I S 7^ 7 7 -2 S ' Video Buffer J a n u a ry 1 9 8 9 Features Description • T h is C irc u it Is P ro c e s s e d In A c c o rd a n c e to M li-S td 8 8 3 a n d is F u lly C o n fo rm a n t U n d e r th e P ro v is io n s o f |
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500mv10vto0 | |
TC514101J
Abstract: Z80 INTERFACING TECHNIQUES
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tc514101j/ztc514101tc514101jz80 interfacing techniques | |
2SB415
Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
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4000h2sb4152sb 7102sc1061+7 | |
bcm 4330
Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
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bcm 4330telemecanique contactor cataloguea5 gnc mosfetphilips ecg master replacement guide+6 | |
AT29C257-20JI
Abstract: atmel 928 29C010 29C512 AT29C257 AT29C257-12
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g0g23bdat29c257at29c257-20jiatmel 928+3 | |
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Contextual Info: SIEM ENS 4M X 4-Bit Dynamic RAM 3.3 V, 4k-refresh HYB 3116400BJ/BT -50/-60/-70 Prelim inary Inform ation • • • • • • 4 194 304 w ords by 4-bit organization 0 to 70 "C operating tem perature Fast access and cycle tim e RAS access time: 50 ns (-50 version) |
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3116400bj/btfi235bd50g714b36s35b05+1 | |
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Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿¿PP4264400, 4265400 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BtT, FAST PAGE MODE Description The /¿PD4264400, 4265400 are 16,777,216 words by 4 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption |
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pp4264400upd4264400upd426540032-pin+5 | |
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Contextual Info: KM41 V 160 00 BK CMOS D R A M ELECTRONICS 1 6 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time |
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16mx1km41v16000bk00340b516000bk+1 | |
574 nec
Abstract: ft 4a
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128k-wordupd421805pd42180528-pin+7 | |
single chip digital multimeterContextual Info: NJ U9 2 1 O P R E L I M I N A R Y 3 - 3 / 4 • ■ D I G I T S I N G L E C H I P D I G I T A L GENERAL DESCRIPTION The NJU9210 is 3*3/4 digits with 42 segments bargraph single chip digital multimeter LSI. The AD converter block incorporates two kind of duaI — |
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nju9210single chip digital multimeter | |
JRC 45600
Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
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zop033zop035zop036zop037+16 | |
ifr 2945b service manual
Abstract: 2945A programming manual 2945A remote ifr 2945b aeroflex communications service monitor 2945b 2945A ptt 5102 4 channel long range RF based remote control DCS Basic Pdf Notes vor antenna
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2944b2945b2948bprog04455+10 | |
0119 Solar Lamp Controller
Abstract: transistor SMD W06 78 NXP Semiconductors 70150 TYN225 WH1602A Matsua microswitch 250V AC IRF9520 Samsung iskra BT 200 MOTOR FM 270R 74HC00M
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pp751-856127mm525mm1550khz+13 | |
C6426
Abstract: C6419 c6492 Inventec C6384 STV 5v sense DG board C6782 D1047 C6464 powerpad_4a
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r6970r6971c2507c2505+16 | |
272374Contextual Info: intJ. 87C196KR/KQ a7C196JV/JT 87C196JR/JQ ADVANCED 16-BIT CHMOS MICROCONTROLLER Automotive m —40°C to +125°C Ambient • High Performance CHMOS 16-Bit CPU ■ Up to 48 Kbytes of On-Chip EPROM ■ Up to 1.5 Kbytes of On-Chip Register RAM ■ Up to 512 Bytes of Additional RAM |
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87c196kr/kqa7c196jv/jt87c196jr/jq16-bit+6 | |
87c196 programmerContextual Info: in tj 87C196KR/KQ 87C196JV/JT 87C196JR/JQ ADVANCED 16-BIT CHMOS MICROCONTROLLER Automotive • -40°C to + 125°C Ambient ■ High Performance CHMOS 16-Bit CPU ■ High Speed Peripheral Transaction Server PTS ■ Up to 48 Kbytes of On-Chip EPROM ■ Two 16-Bit Software Timers |
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87c196kr/kq87c196jv/jt87c196jr/jq16-bit+4 | |
k2645
Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
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mk135mk136mk137mk138+16 | |