5536B Search Results

100490

Contextual Info: FU JIT S U ECL 65536-BIT BIPOLAR RANDOM ACCESS MEMORY MBM100490-15 MBM100490-25 J u ly 1 9 8 7 E d tio n 1 .0 65536-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 100490 is fu lly decoded 6 5536-bit ECL read/w rite random access m em ory designed fo r main m em ory, co ntro l and b u ffe r storage applications. This device is organized as 65536 words b y one b it, and it features

5536

Abstract: SLE 4406 in 4436 4436 secret
Contextual Info: Security & Chip Card ICs SLE 5536/36E Intelligent 221–Bit EEPROM Counter for > 20000 Units with Security Logic and High Security Authentication Short Product Information 07.99 6/ ( 6KRUW 3URGXFW ,QIRUPDWLRQ 5HYLVLRQ +LVWRU\ &XUUHQW 9HUVLRQ 

5K4164ANP-20

Contextual Info: MITSUBISHI LSIs M 5K4164ANP-20 6 5 5 3 6 -B IT 6 5 5 3 6 - WORD B Y 1-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) T his is a fa m ily o f 65536-word b y 1-bit d y n a m ic R A M s , fab ricate d w ith the high p erform ance N-channel silicongate

germanium transistor

Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
Contextual Info: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types

Contextual Info: * SY100494-5 SY101494-5 SY100494-6 SY101494-6 «eix a ro i n«M 16K x 4 ECL RAM SYNERG Y SEMICONDUCTOR FEATURES DESCRIPTION • Address access time, toa : 5/6ns max. ■ Chip select access time, tAc: 3ns max. ■ Edge rate, tr/tf: 500ps typ. ■ Eliminates write recovery glitch found on

Contextual Info: MITSUBISHI LSIs M5M5189AP, J-25,-35, -45,-55 6 5 S 3 6 -B IT 16384-W ORD BY 4-B IT CMOS STATIC RAM DESCRIPTION This is a fam ily o f 16384 word by 4-bit static RAMs, fabri­ cated w ith the high-performance CMOS silicon-gate MOS process and designed for high-speed application. These

5541B

Abstract: 5542B 5536B
Contextual Info: CD5518B thru CD5546B MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Forward Voltage @ 200 mA: 1.5 Volts Maximum ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified N O M IN A L M A X. REVER SE JEDEC

MBM100490-25

Abstract: 100490
Contextual Info: FUJITSU ECL 65536-BIT BIPOLAR RANDOM ACCESS MEMORY MBM100490-15 MBM100490-25 July 1987 Edtion 1.0 65536-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 100490 is fu tty decoded 6 5536-bit ECL read/w rite random access m em ory designed fo r main m em ory, co n tro l and b uffe r storage a pp li­

Contextual Info: This document was generated on 10/10/2013 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 130098-0097 Active Strain-Relief Cord Grips MAX-LOC Strain Relief Cord-Sealing Grip, 3/4" NPT, Straight Male, Cable Diameter