5535 12 Search Results

oscillator circuit with op amp 741 its output

Abstract: precision rectifier using 741 oscillator circuit with op amp 741 NE5535 747 op amp op amp transistor current booster circuit 2N3638 equivalent diode for R2C 5535-F SE5535
Contextual Info: NE/SE5535 Dual High Slew Rate Op Amp Product Specification DESCRIPTION FEATURES The N E /SE 5535 is a new generation operational am plifier featuring high slew rates com bined with improved input characteristics. The 5535 is a dual con­ figuration. Internally com pensated for

NE535N

Abstract: 5535 12 NE5535 NE535T ne535
Contextual Info: N E /SE 535-T • N E /SE 5535-F,K ,N ,N -14 DESCRIPTION PIN CONFIGURATIONS T he 535 and 5535 are new ge nera tion o p era­ tion al a m p lifie rs fe a tu rin g high slew rates c o m bined w ith im proved in p u t ch a ra c te ris ­ tics. The 535 is a sin g le device w h ile the

Transformer 12V 3A

Abstract: RL-5535 5535 LM-258X-T4
Contextual Info: RL-5535 FLYBACK TRANSFORMER FOR NATIONAL SEMICONDUCTOR DESCRIPTION FEATURES & APPLICATIONS • Flyback Transformer • LM-258X-T4 • Compact through-hole transformer • Flyback topology power supplies ENVIRONMENTAL DATA • • Storage temperature range:

Contextual Info: This document was generated on 03/27/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 75342-5535 Active GbX Backplane Connector System 1.85mm by 1.85mm Pitch 4-Pair GbX® Backplane Connector System, Power Module,

nc 5534

Abstract: LM-258X-T3 LM-258X-T4
Contextual Info: RL-5534 RoHS COMPLIANT RL-5535 FLYBACK TRANSFORMER FOR NATIONAL SEMICONDUCTOR New LM258X Simple Switcher Series RL-5534 LM-258X-T3 1 0.95 7 3 fsw=100KHz NC 0.18 .800 1.48 12x .025 SQ. PINS +Vdd 6 18-36V 9 10 12 V 1.4 A 12 NOTCH INDICATES PIN #1 1.29 0.150*

Contextual Info: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. 5535 Construction Diameters (In) 1) Component 1 5 X 1 COND a) Conductor 16 (19/.0117) AWG TC 0.059 b) Insulation 0.032" Wall, Nom. PVC

precision rectifier using 741

Abstract: oscillator circuit with op amp 741 NE5535 ha741 747 op amp 747 dual op amp op amp transistor current booster circuit 741 op amp multiplier be s7g current to voltage converter using 741
Contextual Info: NE/SE5535 Signetics Dual High Slew Rate Op Amp Product Specification Linear Products DESCRIPTION FEATURES The NE/SE5535 is a new generation operational amplifier featuring high slew rates combined with improved input characteristics. The 5535 is a dual con­

precision rectifier using 741

Abstract: NE5535 SE5535N
Contextual Info: NE/SE5535 Signetics Dual High Slew Rate Op Amp Product Specification Linear Products DESCRIPTION FEATURES The NE/SE5535 is a new generation operational amplifier featuring high slew rates combined with improved input characteristics. The 5535 is a dual con­

LM-258X-T4

Contextual Info: RL-5534 RL-5535 FLYBACK TRANSFORMER FOR NATIONAL SEMICONDUCTOR New LM258X Simple Switcher Series RL-5534 LM-258X-T3 1 0.95 7 3 fsw=100KHz NC 0.18 .800 1.48 12x .025 SQ. PINS +Vdd 6 18-36V 9 10 12 V 1.4 A 12 NOTCH INDICATES PIN #1 1.29 0.150* 12 11 10

precision rectifier using 741

Abstract: 747 op amp oscillator circuit with op amp 741 741 op amp multiplier op amp transistor current booster circuit la741 NE5535 ha741 2N3638 op amp current booster using transistors
Contextual Info: NE/SE5535 Dual High Slew Rate Op Amp Product Specification PIN CONFIGURATION DESCRIPTION FEATURES The NE/SE5535 is a new generation operational amplifier featuring high slew rates combined with improved input characteristics. The 5535 is a dual con­ figuration. Internally compensated for

2SC5374

Abstract: ITR08173 ITR08174 ITR08168 ITR08169 ITR08170 ITR08171 ITR08172 n553
Contextual Info: 注文コード No. N 5 5 3 5 A 2SC5374 No. N5535A 30700 開発速報 No ※ 5535 とさしかえてください。 2SC5374 特長 NPN エピタキシァルプレーナ形シリコントランジスタ VHF ~ UHF 帯発振 , 高周波増幅用 ・高利得である：⏐S21e⏐2=10.5dB typ（f=1GHz）

a6559

Abstract: LT5503
Contextual Info: LTC5535 Precision 600MHz to 7GHz, RF Detector with Adjustable Gain and 12MHz Baseband Bandwidth DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ Temperature Compensated Internal Schottky Diode RF Detector Wide Input Frequency Range: 600MHz to 7GHz*

4440 audio amplifier

Abstract: DIODE RF DETECTOR tp 4056 battery receiver 2904 rf S11 SCHOTTKY diode LT5512 LT5503 LTC5535 LTC5535ES6 MO-193
Contextual Info: LTC5535 Precision 600MHz to 7GHz, RF Detector with Adjustable Gain and 12MHz Baseband Bandwidth U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ Temperature Compensated Internal Schottky Diode RF Detector Wide Input Frequency Range: 600MHz to 7GHz*

COM16

Abstract: ML9052 OKI M 5238
Contextual Info: Pr E2B0052-19-66 el im ar This version: Jun. 1999 ML9052 in y ¡ Semiconductor ML9052 ¡ Semiconductor 132-Channel LCD Driver with Built-in RAM for LCD Dot Matrix Displays GENERAL DESCRIPTION The ML9052 is an IC for dot matrix graphic LCD devices carrying out bit map display. This IC

Contextual Info: 6 7 T H IS DRAW ING IS U N P U B L IS H E D . RE LEA S E D FOR 5 PU B LIC ATIO N ALL RIGHTS RESERVED. COPYRIGHT ~ By - D 1.75 [.069] C B 00.1 5[.006] m RECOMMENDED PC BOARD HOUSING MATERIAL: GLASS FILLED POLYESTER, COLORCONTACT MATERIAL: PHOSPHOR LAYOUT

OKI M 5238

Abstract: 1509 380kW ML9050 ML9051 ML9052 48Lines V42678
Contextual Info: Pr E2B0053-19-66 el im ar This version: Jun. 1999 ML9050/9051 in y ¡ Semiconductor ML9050/9051 ¡ Semiconductor 132-Channel LCD Driver with Built-in RAM for LCD Dot Matrix Displays GENERAL DESCRIPTION The ML9050/9051 is an LSI for dot matrix graphic LCD devices carrying out bit map display.

NE5535

Abstract: NE5535N NE5535K NE5535N-14 SE535 SE5535 SE5535F SE5535K SE5535T signetics 5535
Contextual Info: S ign etics Integrated Circuits Operational Am plifier NE5535 Series — Dual High Slew Rate Operational Amplifiers C O N N E C T IO N D IA G R A M G E N E R A L DE SC R IPTIO N The 553 5 is a new generation ope rational a m p lifie r featu rin g high slew rates com bined w ith im proved in p u t

irs 530

Abstract: 9051D diode+cross+reference+SL+1515
Contextual Info: J2B0053-19-64 ¡ 電子デバイス 作成：1999年6月 ML9050/9051 l ML9050/9051 暫定 液晶ドットマトリックス用132チャンネルRAM内蔵LCDドライバ n 概要

2SC5374

Abstract: KT 819 transistor Specification zo 607
Contextual Info: Ordering number:EN5535A NPN Epitaxial Planar Silicon Transistor 2SC5374 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions • High gain : S21e =10.5dB typ f=1GHz . · High cutoff frequency : fT=5.2GHz typ. 2 unit:mm

ITR08169

Abstract: 2SC5374 ITR08168 ITR08170 ITR08171 ITR08172
Contextual Info: Ordering number:ENN5535A NPN Epitaxial Planar Silicon Transistor 2SC5374 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions ⏐S21e⏐2=10.5dB • High gain : typ f=1GHz . · High cutoff frequency : fT=5.2GHz typ. unit:mm

TRANSISTOR KT 837

Abstract: a1046 transistor A1046 A1684
Contextual Info: Ordering number:ENN5535A NPN Epitaxial Planar Silicon Transistor 2SC5374 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions S21e2=10.5dB • High gain : typ f=1GHz . · High cutoff frequency : fT=5.2GHz typ. unit:mm

8 pin ic chip 4835

Abstract: AS018M2-10 AS018M2-01
Contextual Info: EBAlpha Microwave IC Products Selection Guide SPST Switches Reflective Switches Frequency GHz Description Insertion Loss (dB) Isolation (dB) 1 dB Comp. (dBm) Typ. Package Part Number Page Number DC—4.0 General Purpose 0.9-1.6 53-35 24 8 Leaded Surface Mount

Contextual Info: TetraFET D2009UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz PUSH–PULL B H C G 2 3 1 A D E 5 4 F FEATURES I • SIMPLIFIED AMPLIFIER DESIGN N M J O K • SUITABLE FOR BROAD BAND APPLICATIONS

frequency multiplier X3

Abstract: 3335 6940 7960 RMK-3-14 11978
Contextual Info: Frequency Multiplier Tripler RMK-3-14+ Typical Performance Curves Conversion Loss X3 Output @ RF IN=13dBm Harmonic X1 Output @ RF IN=13dBm 25 15 X3 Output @ -40°C X3 Output @ +25°C X3 Output @ +85°C 21 13 Harmonic Ouput (-dBc) Conversion Loss (dB) 23