5518 IC Search Results

D8172

Abstract: ISO 7816 Infineon SLE4418
Contextual Info: Chip Card & Security ICs SLE 5518 Intelligent 1024 Byte EEPROM with Write Protection Preliminary Short Product Information November 2006 SLE 5518 Short Product Information, Preliminary Revision History: Current Version 2006-11-24 Previous Releases: Page Subjects changes since last revision

5518

Abstract: ISO 7816 Infineon EEPROM coding SLE4418
Contextual Info: Chip Card & Security ICs SLE 5518 Intelligent 1024 Byte EEPROM with Write Protection Short Product Information May 2007 SLE 5518 Short Product Information Revision History: Current Version 2007-05-03 Previous Releases: 2006-11-24 Page Subjects changes since last revision

ic 5518

Abstract: general electric
Contextual Info: TRIODE The GL-5518 is a three-electrode transmitting tube designed for use as a Class C radio-frequency amplifier. This tube is particularly well adapted to use in a grounded-grid circuit. The anode is forced- air-cooled, and capable of dissipating 4000 watts,

ic fa 5518

Abstract: 75183 N75183 S8830
Contextual Info: SN55183, SN75183 DUAL DIFFERENTIAL LINE DRIVERS 01 292, OCTOBER 1972 REVISFD SEPTEMBER 1986 S N 5518 3 . . . J PACKAGE S N 7518 3 . . . 0 . J. OR N PACKAGE • Single 5-V Supply • Differential Line Operation • Dual Channels 1A C • TTL Compatibility 18 L 2

6y341

Abstract: LIFO "Microwave technology Inc" "6y341" Microwave Technology
Contextual Info: R E V IS IO N S A P P L IC A T IO N USED ON NEXT ASSEMBLY LTR. DESCRIPTIONS RELEASE/ECN#5345 REVISED/ECN#5518 DATE 5/07/98 APPROVED T. NAKAMURA v /jp /y T SEMICONDUCTOR STANDARD VISUAL INSPECTION SPECIFICATIONS FOR MwT GaAs FETs LEVEL 3 R EV ISIO N S T A T U S O F S H E E T S

ic 5518

Abstract: 5518 ic
Contextual Info: I 1N 5518 thru Micro/semi Corp. 1N 5546 The diode experts SCOTTSDALE, A Z F o r m o re in fo rm a tio n call: 602 941-6300 LOW VOLTAGE AVALANCHE D IO D E S DO-35 FEATURES • LOW ZENER NOISE SPECIFIED • LOW ZENER IMPEDANCE • LOW LEAKAGE CURRENT • HERM ETICALLY SEALED G LASS PACKAGE

lt1750

Abstract: 5518 ic 5518 DC729A DC831A LT5518 LT5518EUF LT5528 MO-220 5518f
Contextual Info: LT5518 1.5GHz–2.4GHz High Linearity Direct Quadrature Modulator U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 5518 is a direct I/Q modulator designed for high performance wireless applications, including wireless infrastructure. It allows direct modulation of an RF signal

Contextual Info: LT5518 1.5GHz–2.4GHz High Linearity Direct Quadrature Modulator U DESCRIPTIO FEATURES           High Input Impedance Version of the LT5528 Direct Conversion to 1.5GHz – 2.4GHz High OIP3: 22.8dBm at 2GHz Low Output Noise Floor at 20MHz Offset:

LA 5530

Abstract: la 5531 sch 5514 ic 5518 HSCH-5514 393 rug 5510 ram 5518 ic
Contextual Info: HE WL E T T - P A C K A R Dn CMPNTS Whlri HEW LETT J PACKARD SQE D E3 4447SÖ4 OOOSbCH BEAM LEAD SCHOTTKY DIODE PAIRS FOR MIXERS AND DETECTORS b B HSCH-5500 SERIES T-O'l'O'? Features M O N O LIT H IC PAIR C losely M atched Electrical Parameters LOW CAPACITANCE

ic 5518

Abstract: 5518 ic LA 5530 8 pin IC h002 ic 5534 ic an 5534 HSCH-5520 la 5531
Contextual Info: Whp% wL'nM HEWLETT PACKARD Beam Lead Schottky Diode Pairs for Mixers and Detectors Technical Data HSCH-5500 Series Features • Monolithic Pair Closely Matched Electrical Parameters • Low Capacitance 0.1 pF Maximum at 0 Volts • Low Noise Figure Guaranteed 7.5 dB at 26 GHz

LA 5530

Contextual Info: HEWLETT-PACKARD/ nt CHPNTS b lE D H 4 4 4 7 5 A 4 DDDT5Ô6 0 5 b W h n l HEWLETT HHPA %LtJÊ PACKARD B eam L ead Schottky D iode P airs for M ixers and D etectors Technical Data HSCH-5500 Series Features • Monolithic Pair • • • • • • Closely Matched Electrical

Contextual Info: V950ME17-LF PHASE NOISE 1 Hz BW, typical Rev A1 Voltage-Controlled Oscillator Surface Mount Module Applications • Fixed Wireless • Microwave Radios • £(f) (dBc/Hz) 14118 Stowe Drive, Suite B | Poway, CA 92064 TEL: (858) 621-2700 | FAX: (858) 486-1927

MSC 5518

Abstract: 33-16L msc5518 5518 ic datasheet LX5518 LX5518LQ 3316L 5518 ic ic 5518 5518
Contextual Info: LX5518 TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION Advanced InGaP HBT 2.4-2.5GHz Operation Single-Polarity 3-5V Supply Power Gain ~ 30 dB 26dBm @3%EVM,802.11g/5V 24dBm @3.5%EVM,80211g/3.3V 28dBm @CCK,802.11b/5V

Contextual Info: V950ME17-LF Rev A1 PHASE NOISE 1 Hz BW, typical Voltage-Controlled Oscillator Surface Mount Module Applications • Fixed Wireless • Microwave Radios • £(f) (dBc/Hz) 14118 Stowe Drive, Suite B | Poway, CA 92064 TEL: (858) 621-2700 | FAX: (858) 486-1927

IC TTL 7432

Abstract: IC 7402, 7404, 7408, 7432, 7400 ttl 74118 74189 memory ic 74138 74189 ttl memory TTL 74289 RC4458 IC 74373 ttl 74592
Contextual Info: Test and Measurement Systems Electronic Manufacturing Services ABI Electronics Limited Dodworth Business Park Barnsley S75 3SP South Yorkshire United Kingdom Tel: +44 0 1226 207420 Fax: +44 (0)1226 207620 www.abielectronics.co.uk ChipMaster Compact Professional IC List

Contextual Info: & SYNERGY D U A L SONET O C - 1? CLOCK SYNTHESIZER «: If ii >Y 8 9 4 2 5 S E M IC O N D U C T O R D ES C R IPTIO N FEA TU R E S • Two independently-powered 622.08MHz clock sources one chip ■ Differential PECL outputs ■ TTL/CMOS compatible inputs ■ SONET compliant jitter performance <0.01 III

TMP47C26F

Abstract: dial tone TLCS 47 P141 P142 QFP44 SDIP42 TMP47C26N 47C26 2 tone "tone generator"
Contextual Info: TOSHIBA TMP47C26 CMOS 4-BIT MICROCONTROLLER TMP47C26N TMP47C26F T h e 47C26 is a h ig h p e r fo r m a n c e 4-bit sin g le c h ip m ic ro c o m p u te r b ased on th e TLCS-47 C M O S series w it h a D T M F g e n e r a t o r a n d a ia rg e c a p a c ity R A M

74S387

Abstract: 74s288 74S474 74S188 MMI 6381 74S287 27ls09 74S209 MMI 6349 74s201
Contextual Info: Signetics Memories BIPOLAR M EMORY CROSS R E F E R E N C E AMD' 2700/27 LSOO 2701/27LSÛ 1 27S08/27LS08 27S09/27LS09 27S10 27S11 3101 310 1 A/27S02 93415 93415A 93425 93425A F A IR C H IL D 10149 10144 1 0410 10415 93403 93406 93411 93411A 93415 93415A 93417

Contextual Info: 2N5515 -2N5524 CA L O GI C CORP MÌE D • 1 8 M M 3 S 5 0 0 00 33 5 T M C 6 C Dual N-Channel JFET Low Noise Amplifier caloric CORPORATION V 2N5515-2N5524 A B S O L U T E M A X IM U M R A T IN G S T a = 2 5 °C unless otherwise specified FE A T U R E S •

Contextual Info: DISCON IN DU ST R I ES INC A4 • DISCON 7~ - £ > - / 7 D e | SÖSDÖ17 OODOlfll T -. . . .• INDUSTRIES, INC S B M O D E L 5700 B C D TO 7 LIN E D E C O D E R /D R IV E R W ITH M EM O R Y M O D E L 5701 Chaaala Mounted PC Card & Soldar Pada '• •••

TRANSISTOR c 5578 B

Abstract: 2N6427 2N6426 AN-41 AN-569 IC 2030 TRANSISTOR 5578 2902 transistor
Contextual Info: 2N6426 2N6427 NPN SILICON ANNULAR+ DAR LINGTON TRANSISTORS . . . designed for use as high-gain amplifiers control . circuits; drivers Collector-Emitter BVCEO for displays, Breakdown = 40 Vdc Min ● DC Current ● Low Noise Figure — Gain specified ●

74LS364

Contextual Info: 74LS364 Signetics Flip-Flop Octal D Flip-Flop With 3-State Outputs Product Specification Logic Products FEATURES • 8-bit positive edge-triggered register • 3-State MOS compatible output buffers • Common Clock input with hysteresis • Common 3-State Output Enable

74s288

Abstract: SIGNETICS 74S188 74S188 74S287 74S474 mmi 6331 74S387 signetics 82s23 H6555 MMI 6349
Contextual Info: S ig n e tic s Memories BIPOLAR M EMORY CROSS R E F E R E N C E AMD' 2700/27 LSOO 2701/27LSÛ 1 27S08/27LS08 27S09/27LS09 27S10 27S11 3101 310 1 A/27S02 93415 93415A 93425 93425A F A IR C H IL D 10149 10144 1 0410 10415 93403 93406 93411 93411A 93415 93415A

2U02

Abstract: 47C25
Contextual Info: TO SH IBA TMP47C26 CMOS 4-BIT M ICRO CO N TRO LLER TMP47C26N TMP47C26F T h e 47C26 is a h ig h p e rfo rm a n c e 4-bit sin g le chip m ic ro c o m p u te r based on th e TLCS-47 C M O S series w ith a D T M F g e n e ra to r an d a la rg e ca p a city R A M fo r re p e rto ry d ia lin g a p p lic a tio n s , an d w h ic h is s u ita b le fo r