54B DIODE Search Results

BDX53C

Abstract: BDX53 BDX53B BDX53 equivalent equivalents transistor bdx53 bdx54 darlington bdx53 BDX53A transistor darlington transistor bdx53c
Contextual Info: BDX53/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS,AUDIO AMPLIFIERS APPLICATION POWER LINEAR AND SWITCHING APPLICATIONS •Complementary to BDX54/54A/54B/54C respectively TO-220 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic

Contextual Info: N AMER PHILIPS/DISCRETE SSE I> • T'0l~Ol kfaS3131 Q01fc,54b S ■ Surface M ount Devices VARIABLE CAPACITANCE DIODES RATINGS TYPE BB215 BB219 BB804 BBY31 BBY39* BE1Y40 BBY42 BBY62* PACKAGE SOD-80 SOD-80 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-143 Cd RATIO

ZENER 34b

Abstract: zener diode 33B marking 43b zener 35b 52B zener 46B zener Zener diode 81A MARKING 46B 47B diode 43B diode
Contextual Info: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE _3.0 2.8 0.14 0.48 "538 2.6 2.4 _ 1. 02 _ 0.89 _2 .00 _ 0.60 0.40 Marking CMBZ5230B 31B 32B

ST BDX53C

Abstract: BDX53C Complementary Darlington Audio Power Amplifier BDX54C BDX54B 54B diode SILICON COMPLEMENTARY transistors darlington BDX53B
Contextual Info: BDX53B / BDX53C BDX54B / BDX54C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • STMicroelectronics PREFERRED SALESTYPES APPLICATIONS AUDIO AMPLIFIERS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ 3 DESCRIPTION The BDX53B and BDX53C are silicon

ZENER 34b

Abstract: 5252B 5255B zener diode 33B CMBZ52XX 43B MARKING 8f zener CMBZ-5252B 40b marking diode 43b
Contextual Info: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE _3.0 2.8 0.14 0.48 "538 2.6 2.4 _ 1. 02 _ 0.89 _2 .00 _ 0.60 0.40 Marking CMBZ5230B 31B 32B

BDX54B

Abstract: BDX54b equivalent BDX53A BDX53B BDX53C BDX54C
Contextual Info: BDX53A/53B/53C BDX54B/54C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • BDX53B, BDX53C, BDX54B AND BDX54C ARE SGS-THOMSON PREFERRED SALESTYPES APPLICATIONS ■ AUDIO AMPLIFIERS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 1 2 3 TO-220 DESCRIPTION

erm 38b

Abstract: 5252B
Contextual Info: CMBZ52XX series CDIL SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN nun Pin configuration 1= ANODE 2 = NC 3 = CATHODE 3.0 2.8 0.14 0.48 0.38 3 2.6 2.4 — I- T •FT 1.02 I 0.89 2 .00 _ 0,60 0.40 1.80

5251B

Abstract: CMBZ-5251B 5257B zener 35b 43B diode 5233B 5234B CMBZ-5243B marking 43b marking 8G
Contextual Info: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE O UTLIN E DETAILS ALL D IM EN SION S IN m m Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 2.8 0.48 1 0.38 ri 3 i 2.6 1 2.4 11 0.14 _!-02_ 0.89 0.60 0.40 Marking CMBZ5230B 31B

Contextual Info: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 3.0_ “ 2.8 0.14 0.48 0.38 3 2.6 2.4 1.02 7>.8<T 2.00 0.60 0.40 1.80 Marking CMBZ5230B 31B

Contextual Info: SONY S L D 1 1 2 1 V S 5mW Visible Laser Diode Description Package Outline T h e S L D 11 21 V S is a red laser diode designed for bar Unit : mm R«ta«rtct Slot code readers and measuring instruments. This features a small package and lower power consumption.

BV722

Abstract: BY723 Q04G533 Cathode indicated by blue band diode Cathode indicated by blue band BY722 BY724 sod BLUE BAND
Contextual Info: SbE PHILIPS ]> • 711002b INTERNATIONAL Q04G533 SbE 473 BY722 BY723 BY724 * PH I N D T - O 'i - i s ' SILICON VERY FAST EHT SOFT-RECOVERY RECTIFIER DIODES* EHT rectifier diodes in glass envelopes intended fo r use in high-voltage applications e.g. the high-voltage

HL1323

Contextual Info: HL1323DM InGaAsP LD Description The HL1323DM is a 1.3 pm band InGaAsP laser diode with a double heterostructure. It is suitable as a light source for optical fiber communication systems, such as LAN, CATV, and LJN. Features Fiber Specifications • Long wavelength output: Ap = 1260 to 1340 nm

zener 73B

Abstract: smc5346b SMC53
Contextual Info: SMC5342B series Surface Mount Zener Diodes SURFACE MOUNT ZENER DIODES 5.0 WATTS P b Lead Pb -Free Features: * Glass passivated chip * Low leakage * Built-in strain relief * Low inductance * High peak reverse power dissipation * For use in stabilizing and clipping circuits with high

ZENER 1N5

Abstract: 1N52B 1N52 Hitachi DSA002711
Contextual Info: 1N5223B through 1N5258B Silicon Epitaxial Planar Zener Diodes for Voltage Regulation ADE-208-137 Z Preliminary, Rev. 0 Aug. 1993 Features • Glass package DO-35 structure ensures high reliability. • Wide spectrum from 2.7V through 36V of zener voltage provide flexible application.

52B zener

Abstract: 5233B 5241b SMBZ-5250B 47B SOT23 5252B SMBZ-5239B SMBZ-5245B SMBZ5230B SMBZ-5230B
Contextual Info: SMBZ5230 THRU SMBZ5257 SILICON PLANAR ZENER DIODES, 500mW, SOT-23 PACKAGE PACKAGE OUTLIN E DETAILS ALL DIM EN SION S IN m m Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 3.0 2.6 0 .1 4 - * ^ 0.09 0.48 0.38 «a 3 44 2.6 RQ.1 .004 1-° ? 0.89 0,60 0.40 =

smd transistor 41B

Abstract: 5251B SMD 41B sot23 5241B zener 35b smd MARKING 8g 5233B 81F smd CMBZ-5245B SMD marking 8M zener
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS

Contextual Info: I n ter n a t/ onal S e m ic o n d u c t o r I n c . 1N5728B thru 1N5757B 400 M ILLIW ATT H ER M ETIC ALLY SEALED G LASS SILICON ZENER DIODES M A X IM U M R A TIN G S Junct i on Temperat ure: Storage Temperature: DC Power Dissipation: Power Derating: Forward Vol tage

smd transistor 41B

Abstract: SMD 41B sot23 5241B 5252B CMBZ-5251B smd 41B 5233B 5245B CMBZ-5245B CMBZ5230B
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE

Contextual Info: Bulletin 12031 /A International S Rectifier 70/300U R .d series STANDARD RECOVERY DIODES Stud Version 250A Features • Diffused diode ■ W ide cu rren t range ■ High vo ltag e ratings up to 1 6 00V ■ High surge current capab ilities ■ Stud catho de and stud an o d e version

Contextual Info: T e m ic TZMC Semiconductors Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise Applications Voltage'stabilization Absolute Maximum Ratings

HSCH-5310

Contextual Info: míHiM HP AECWKLAERTDT I5S 1 Beam Lead Schottky Diodes for Mixers and Detectors 1 -2 6 GHz Technical Data HSCH-5300 Series Features • Platinum Tri-Metal System Outline 07 High Temperature Stability • Silicon Nitride Passivation Stable, Reliable Performance

9A3 zener

Abstract: 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B 1N5229B 1N5258B ZENER 1N5
Contextual Info: 1N5223B through 1N5258B Silicon Epitaxial Planar Zener Diodes for Voltage Regulation ADE-208-137B Z Rev.2 Dec. 2001 Features • Glass package DO-35 structure ensures high reliability. • Wide spectrum from 2.7 V through 36 V of zener voltage provide flexible application.

t1d6

Abstract: Si9948DY
Contextual Info: Tem ic SÌ9948DY S e m ic o ndu c to r s Dual P-Channel Enhancement-Mode MOSFET Product Summary V d s V rDS(on) (Q ) I d (A ) 0.28 @ VGS = -1 0 V ± 2 .0 0.50 @ V Gs = -4 .5 V ± 1 .6 -6 0 Si Q SO-8 X I D, T1 D, 6 1 Ü2 [T [T s2 [T G2 1 4 Si Gi ~ n G2 G ì O- >|— f

IRFS634

Abstract: OS125
Contextual Info: N-CHANNEL POWER MOSFETS IRFS634 FEATURES • • • • • • • Lower R ds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability