545E Search Results

Contextual Info: HMC545 / 545E v00.0905 GaAs MMIC SPDT SWITCH, DC - 3 GHz Typical Applications Features The HMC545 / 545E is ideal for: Low Insertion Loss: 0.25 dB • Cellular/3G Infrastructure High Input IP3: +65 dBm • Private Mobile Radio Handsets Low DC Power Consumption

SPDT SWITCH MARKING 301

Contextual Info: HMC545 / 545E v00.0905 GaAs MMIC SPDT SWITCH, DC - 3 GHz Typical Applications Features The HMC545 / 545E is ideal for: Low Insertion Loss: 0.25 dB • Cellular/3G Infrastructure High Input IP3: +65 dBm • Private Mobile Radio Handsets Low DC Power Consumption

545E

Contextual Info: HMC545 / 545E v00.0905 GaAs MMIC SPDT SWITCH, DC - 3 GHz Typical Applications Features The HMC545 / 545E is ideal for: Low Insertion Loss: 0.25 dB • Cellular/3G Infrastructure High Input IP3: +65 dBm • Private Mobile Radio Handsets Low DC Power Consumption

HMC545E

Abstract: 545e HMC545
Contextual Info: HMC545 / 545E v00.0905 SWITCHES - SMT 8 GaAs MMIC SPDT SWITCH, DC - 3 GHz Typical Applications Features The HMC545 / 545E is ideal for: Low Insertion Loss: 0.25 dB • Cellular/3G Infrastructure High Input IP3: +65 dBm • Private Mobile Radio Handsets

SN74LVCH162244A

Contextual Info: SN74LVCH162244A 16-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS S C A S 545E - O C TO B ER 1995 - R EVISED JA N U A R Y 1998 D D D Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process Output Ports Have Equivalent 26-il Series

HMC545

Abstract: HMC545E
Contextual Info: HMC545 / 545E v00.0905 GaAs MMIC SPDT SWITCH, DC - 3 GHz Typical Applications Features The HMC545 / 545E is ideal for: Low Insertion Loss: 0.25 dB • Cellular/3G Infrastructure High Input IP3: +65 dBm • Private Mobile Radio Handsets Low DC Power Consumption

2SC930

Abstract: transistor 2SC930 2SC930NP 2SC2839 2SC930SPA 2SC930 D
Contextual Info: SANYO SEMICONDUCTOR CORP l^ifir|~^?cn 7 0 7 b % 2SC930 D004141 r-s/'/5r T “ 3 2 03 3 í - | 7 NPN. Epitaxial Planar Silico n Transistor 200 3 A AM Converter, FM RF • IF Amp Applications 545E The 2SC930 has two types of packges SPA and NP. Use • FM RF amp, mixer, OSC, converter, and IF amplifier.

b929

Abstract: DCD-725 d6849 A277D ad9a E7834
Contextual Info: 1234546789A BCDE4F6CA1ADA 2AAA8 A!"#A$%CA"&A A A 12324567829A4BCDBE37 F25D4297 "04A B4'%5A !FD7A 467E4.76A D.A 2A 52.9A 7A E7.9A .D682A 767E4.76A 779DCD84FA 576A .D682A 5D946D86A 492D829D78A 28FA F:82CDE.A

diodo 007

Contextual Info: PD - 9.1267G International IGR Rectifier IRF7504 HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel Fast Switching V dss =

SLDU006

Abstract: e80c 8051W F1E6 6a92 668C mosfet Gate Drive F358 65e4 PID 2145
Contextual Info: PGA450-Q1 www.ti.com SLDS185A – APRIL 2012 – REVISED APRIL 2012 ULTRASONIC-SENSOR SIGNAL CONDITIONER Check for Samples: PGA450-Q1 FEATURES APPLICATIONS • • • • • • • • • • • • • • • • • • 1 Dual NMOS Low-Side Drivers

SB545

Abstract: SB5100E-G sb5100e DA121073-150 SB520E-G 550E 560E
Contextual Info: Low VF/ESD Leaded Schottky Barrier Rectifiers SB520E-G thru SB5100E-G "-G" : RoHS Device Voltage Range: 20 to 100 V Current: 5.0 A FEATURES DO-201AD • Low drop down voltage • 5.0A operation at T A =75°C with no thermal runaway • For use in low voltage, high frequency invertors free

SLDU006

Abstract: PGA450-Q1 8051W 43C6 RDS receiver 8051 THROUGH SPI PROTOCOL F304 E769 E415 SLDS185A
Contextual Info: PGA450-Q1 www.ti.com SLDS185A – APRIL 2012 – REVISED APRIL 2012 ULTRASONIC-SENSOR SIGNAL CONDITIONER Check for Samples: PGA450-Q1 FEATURES APPLICATIONS • • • • • • • • • • • • • • • • • • 1 Dual NMOS Low-Side Drivers

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

F1740-410

Abstract: F1740-327-5550-E3
Contextual Info: F1740-5550 and F1740-5558 Vishay Roederstein Suppression Capacitors Quadripole Class X1/Y2 AC 275/250 V FEATURES: Dimensions in mm Product is completely lead (Pb)-free Product is RoHS compliant 115 + 10 L+2 Pb-free D ± 0.5 TERMINALS: 5+2 black black 9 blue

DP8462

Abstract: 20E6 AN-494 C1995 74hco4
Contextual Info: National Semiconductor Application Note 494 Kern Wong April 1989 GENERAL DESCRIPTION This literature assumes the reader has thoroughly read the DP8462 datasheet and is familiar with the basic circuit operation discussed therein The objective of this note is to give

2SC930

Abstract: transistor 2sC930 sj 2025 for amplifiers b1181 VLN 2003a 2SC930 D TRANSISTOR b1181 JIS B1181 NF Amp NPN Silicon transistor TO-3 sj 2025
Contextual Info: SANYO SEMICONDUCTOR CORP 12E D I 7 TT 7 0 7 Li""0004141 fl ^ * 2SC930 T - V - 1 7 2033 NPN. Epitaxial Planar Silicon Transistor 2003A AM Converter, FM RF • IF Amp Applications 545E The 2SC930 has two types of packges SPA and NP. Use • FM RF amp, mixer, OSC, converter, and IF amplifier

SB545E-G

Abstract: SB520E-G SB550E-G SB560E-G SB580E-G SB5100E-G
Contextual Info: Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB520E-G Thru. SB5100E-G Voltage: 20 to 100 V Current: 5.0 A RoHS Device DO-201AD Features -Low drop down voltage. -5.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free

Contextual Info: F1740-5550 and F1740-5558 Vishay Roederstein Suppression Capacitors Quadripole Class X1/Y2 AC 275/250 V FEATURES: Dimensions in mm Product is completely lead (Pb)-free Product is RoHS compliant 115 + 10 L+2 Pb-free D ± 0.5 TERMINALS: 5+2 black black 9 blue

h569-445

Abstract: 915aw1 674A2 SE009S CPS4000 J85501E1 ED83135-30 674c2 lucent technologies gps 2408 FE050A
Contextual Info: Lucent Technologies Power Systems Literature Selection Guide August 2000 Lucent Technologies Power Systems Literature Selection Guide TITLE STATUS DATE August - 2000 DOCUMENT # CONTENTS PAGE — INTEGRATED CIRCUITS — POWER PRODUCTS. 3

8051W

Abstract: PID 2145 2A-89 fault code 40khz ultrasonic park 43C6 SLDS185 Sensor Ultrasonic 40Khz rx tx 500khz ultrasonic transducers 8051 sfr registers 1E4E
Contextual Info: PGA450-Q1 www.ti.com SLDS185 – MARCH 2012 ULTRASONIC SENSOR SIGNAL CONDITIONER Check for Samples: PGA450-Q1 FEATURES APPLICATIONS • • • • • • • • • • • • • • • • • • Dual NMOS Low-Side Drivers Configurable Burst Generator

5558

Abstract: X1Y2
Contextual Info: F1740-5550 and F1740-5558 Vishay Roederstein Suppression Capacitors Quadripole Class X1/Y2 AC 275/250 V FEATURES: Dimensions in mm Product is completely lead (Pb)-free Product is RoHS compliant 115 + 10 L+2 Pb-free D ± 0.5 TERMINALS: 5+2 black black 9 blue

B555 timer

Abstract: SLDU006
Contextual Info: PGA450-Q1 www.ti.com SLDS185A – APRIL 2012 – REVISED APRIL 2012 ULTRASONIC-SENSOR SIGNAL CONDITIONER Check for Samples: PGA450-Q1 FEATURES APPLICATIONS • • • • • • • • • • • • • • • • • • 1 Dual NMOS Low-Side Drivers

008 cow 734

Abstract: RDN240 WB4500 HT-SX gigabit ethernet over sdh 24B02 B3293 rxtcb 4 OIF-SFI401 3018* intel
Contextual Info: Intel WB4500 SDH/SONET STM-16/STS-48 Channelized Data Framer Datasheet Order Number: 274010-002 April 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL ® PRODUCTS. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER, AND INTEL DISCLAIMS ANY EXPRESS

E110 FET

Abstract: TIS58 fet MOTOROLA J210 TIS58 JF1033B J300 Siliconix JF1033S InterFET 16M SOT-23 ta82
Contextual Info: JUNCTION FET Item Number Part Number Y BR GSS loss 9f. (V) (A) Min (S) Max 800u 1.0m 800u 4.5m 800u 1.5m 1.5m 6.0m 6.0m 400u 25 25 25 25 25 25 25 25 1.0m 1.5m 1.6m 2.5m 3.0m 3.0m 3.0m 3.0m 3.0m 4.0m 5m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m :;prgue~,ec