54400A Search Results

MCM54400AZ60

Abstract: mcm54400a MCM54400A-70 mcm54400az MCM5L4400AZ60 MCM5L4400A-70 mcm54400 MCM54400AN60
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 54400A MCM5L4400A 1M x 4 CMOS Dynamic RAM Fast Page Mode The M C M 54400A is a 0 .7 ji CM OS high-speed dynam ic random access memory. It is organized as 1,048,576 four-bit w ords and fabricated with CMOS silicon-gate process

MCM54400AZ70

Abstract: MCM54400AN70 MCM54400AZ80 MCM54400A-C MCM54400AN80 MCM54400A-C70 313X0
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 54400A-C Advance Information 1M x 4 CMOS Dynamic RAM Fast Page Mode Operating Temperature - 40°C to + 85°C The M C M 54400A is a 0 .7 fi C M OS high-speed dynam ic random access memory. It is organized as 1,048,576 four-bit w ords and fabricated with C M OS silicon-gate process

MCM54400A-C

Abstract: K2545 33cA
Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA 54400A-C Advance Information 1M x 4 CMOS Dynamic RAM N PACKAGE 300 M IL SOJ CASE 822-03 Fast Page Mode Operating Temperature - 40 to + 85°C T h e M C M 54400A is a 0.7n C M O S high-speed dynam ic random access m em ory. It is

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 54400A-V Advance Information 1M x 4 CMOS Dynamic RAM Fast Page Mode, 3.3 V Power Supply N PACKAGE 300 MIL SOJ CASE 822-03 The M CM 54400A-V is a 0.7y CMOS high-speed dynamic random access memory. It is organized as 1,048,576 fou r-b it words and fabricated with CMOS sili­

M3620

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM36204 2M x 36 Bit ECC Dynamic Random Access Memory Module for Error Correction Applications T h e M C M 36204 is a 72M dynam ic random a ccess m em ory D RAM m odule o rganized as 2,097,152 x 36 bits. T h e m odule is a double-sided 72-lead single-inline m em ory m odule (SIM M ) consisting of eighteen M C M 54400AN D RAM s

MCM36100 DRAM SIMM

Abstract: MC 5179 MCM36100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 36 Bit Dynamic Random Access Memory Module The M C M 36100 is a 36M dynam ic random access m em ory DRAM m odule organized as 1,048,576 x 3 6 bits. The m odule is a 72-lead single-in-line m em ory m odule (SIM M ) consisting of eight M C M 54400A D RAM s housed in standard 300 mil

TP 3212 TRW

Abstract: MCM54400A 3206m L1AA 54400AN70 54400AN
Contextual Info: MO TO RO LA SEMICONDUCTOR TECHNICAL DATA 1M x 4 CMOS Dynamic RAM 54400A MCM5L4400A Fast Page Mode The 54400A is a 0.7|j CMOS high-speed dynamic random access memory. It is organized as 1,048,576 four-bit words and fabricated with CMOS siiicon-gate process

Contextual Info: IV I K J I U n U L M SEMICONDUCTOR TECHNICAL DATA MCM40100 MCM40L100 1M x 40 Bit Dynamic Random Access Memory Module for Error Correction Applications The M C M 40100 and M C M 40L100 are 40M dynam ic random access m em ory DRAM m odules organized as 1,048,576 x 40 bits. The m odule is a 72-lead single­

MCM54400A-C

Abstract: mcm54400az M5440 M54400
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 54400A-C Advance Information 1M x 4 CMOS Dynamic RAM Fast Page Mode Operating Temperature - 40°C to + 85°C The 54400A is a 0.7p CM OS high-speed, dynamic random access memory. It is organized as 1,048,576 four-bit words and fabricated with CMOS silicon-gate pro­

MCM32230SH60

Abstract: MCM32230SH70 U0-U15
Contextual Info: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA MCM32230 2M x 32 Bit Dynamic Random Access Memory Module The M C M 32230 is a 64M dynam ic random a ccess m em ory D RAM m odule organized as 2 ,097,152 x 32 bits. The m odule is a 72-lead double sided sin g le ­

MCM32130SH60

Abstract: M5440 M54400 MCM32130-70
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM32130 MCM32L130 1M x 32 Bit Dynamic Random Access Memory Module The M CM 32130 is a 32M dynam ic random access m em ory DRAM module organized as 1,048,576 x 32 bits. The m odule is a 72-lead single-in-line m em ory

54400AN

Contextual Info: i v iv s i v n v u n • SEMICONDUCTOR TECHNICAL DATA MCM40200 MCM40L200 2M x 40 Bit Dynamic Random Access Memory Module for Error Correction Applications The M CM 40200 and M C M 40L200 are 80M dynam ic random access m em ory DRAM m odules organized as 2,097,152 x 40 bits. The module is a double-sided

xc68040

Abstract: xc68307 MC88110 mpc 1488 mc68185 Motorola M 9587 xc68lc040 XPC106 MC88100 XPC105
Contextual Info: BR1100/D REV 22 Microprocessor and Memory Technologies Group Reliability and Quality Report Third Quarter 1996 MICROPROCESSOR AND MEMORY TECHNOLOGIES GROUP RELIABILITY AND QUALITY REPORT QUARTER 3, 1996  MOTOROLA INC., 1996 To Our Valued Customers: Thank You! Thank you for selecting Motorola as your supplier of Microprocessor and Memory Products.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 54400A-V Advance Information 1M x 4 CMOS Dynamic RAM N PACKAGE 300 M IL SOJ CASE 822-03 Fast Page Mode, 3.3 V Power Supply The 54400A-V is a 0.7n CMOS high-speed dynamic random access memory. It is organized as 1,048,576 four-bit words and fabricated with CMOS silicon-gate

MCM32100DG60

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM32100D Product Preview D PACKAGE SM ALL O UTLINE DIMM M ODULE CASE 992-01 1M x 32 Bit DRAM Small Outline Memory Module T h e M C M 32100D is a 5 V D RAM sm all outline m em ory m odule SO M M organized as 1,048,576 x 32 bits. The m odule is a JE D E C -standard 72-lead m em ber of th e

MCM54400AN60

Abstract: sl440 MCM54400A MCM54400at60 MCM5L4400AT70 MCM54400AN80
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 4 CMOS Dynamic RAM 54400A MCM5L4400A Fast Page Mode The 54400A is a 0.7p CMOS high-speed dynamic random access memory. It is organized as 1,048,576 fou r-b it words and fabricated with CMOS silicon-gate process technology. Advanced circuit design and fine line processing provide high

K2545

Abstract: MCM54400A-C
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 54400A-C Advance Information 1 M x 4 CMOS Dynamic RAM Fast Page Mode Operating Temperature - 40 to + 85°C The 54400A is a 0.7^ CMOS high-speed dynamic random access memory. It is organized as 1,048,576 fou r-b it words and fabricated with CMOS silicon-gate

MCM54400AN70

Abstract: MCM54400AN60 MCM54400AN80 Motorola CMOS Dynamic RAM 1M MCM5L4400AN70 MCM54400A-70 MCM54400A Motorola CMOS Dynamic RAM 1M x 1 5Bp power control MCM54400A-60
Contextual Info: MOTOROLA Order this document by 54400A/D SEMICONDUCTOR TECHNICAL DATA 54400A MCM5L4400A 1M x 4 CMOS Dynamic RAM Fast Page Mode N PACKAGE 300 MIL SOJ CASE 822-03 The 54400A is a 0.7µ CMOS high-speed dynamic random access memory. It is organized as 1,048,576 four-bit words and fabricated with CMOS silicon-gate process

9L14

Abstract: MCM91430S70
Contextual Info: iv iv s i u n u u M • SEMICONDUCTOR TECHNICAL DATA 1M x 9 Bit Dynamic Random Access Memory Module MCM91430 MCM9L1430 The M C M 91430 and M CM 9L1430 are 9M dynam ic random access mem ory DRAM m odules organized as 1,048,576 x 9 bits. The m odules are 30-lead single-in­

SW 5189 C

Abstract: MCM36100AS60
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM36100 1M x 36 Bit Dynamic Random Access Memory Module S PACKAGE S IM M M O D U L E C A S E 8 6 6 A -0 2 The M C M 36100 is a 36M dynam ic random a ccess m em ory D RAM m odule o rganized as 1,048,576 x 36 bits. The m odule is a 72-lead single-in-line m em ory

MCM54400A-C

Abstract: 54400AN M54400
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 54400A-C Advance Information 1M x 4 CMOS Dynamic RAM Fast Page Mode Operating Temperature - 40 to + 85°C The 54400A is a 0.7|i CMOS high-speed dynamic random access memory. It is organized as 1,048,576 fo u r-b it words and fabricated with CMOS siiicon-gate

CM32230

Abstract: 32L230 3223-07
Contextual Info: SEMICONDUCTOR TECHNICAL DATA MCM32230 MCM32L230 2M x 32 Bit Dynamic Random Access Memory Module The M C M 32230 is a 64M dynam ic random access mem ory DRAM module organized as 2,097,152 x 32 bits. The module is a 72-lead double sided single­ in-line m em ory module (SIM M) consisting of sixteen M C 54400AN DRAMs

MCM54400A-C

Abstract: MCM54400AN70 MCM54400A-C70 MCM54400AZ-70 mcm54400az MCM54400AZ70 MCM54400AZ80
Contextual Info: Order this document by 54400A-C/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 54400A-C Advance Information 1M x 4 CMOS Dynamic RAM Fast Page Mode Operating Temperature - 40 to + 85°C N PACKAGE 300 MIL SOJ CASE 822-03 The 54400A is a 0.7^ CMOS high-speed dynamic random access memory. It is

MCM54400A-C

Abstract: 5Bp power control Motorola CMOS Dynamic RAM 1M x 1 MCM54400A-C70 MCM54400A-C80 MCM54400ANC70 MCM54400ANC80
Contextual Info: MOTOROLA Order this document by 54400A-C/D SEMICONDUCTOR TECHNICAL DATA 54400A-C Advance Information 1M x 4 CMOS Dynamic RAM N PACKAGE 300 MIL SOJ CASE 822-03 Fast Page Mode Operating Temperature – 40 to + 85°C The 54400A is a 0.7µ CMOS high-speed dynamic random access memory. It is