540 W 03 OJ Search Results

6922

Contextual Info: A -A 6,5 Max. □0,64 1 1r / \ l CT d LTI OJ °°- LJ n j c t_ i 2,54 , PC-Board layout view component side •fr 10 0 .0 5 102,8 Min 3,82 1.27 1st contact - -J i_n Coding style table n=r ^ -0 o o o o o o o o ^ i \_ _ _ _ _ r. OJ i_n Style A:

Contextual Info: IDT54/74FCT240/A/C IDT54/74FCT241/A/C IDT54/74FCT244/A/C IDT54/74FCT540/A/C IDT54/74FCT541/A/C FAST CMOS OCTAL BUFFER/LINE DRIVER FEATURES: DESCRIPTION: • The IDT octal buffer/line drivers are built using an advanced dual metal CMOS technology. The ID T54/74FCT240/A/C,

6209A

Abstract: TC-6209A 2SA1611 04 NG 537
Contextual Info: zr— ^ — h N E C jr vU = i> 2SA1611 P N P X fcf£ * V # V=l> M m m m sm mm « "J o S / J\ f é W f ê T * U , /N'T 7 U KlCffl t 2.1 L T ft T - - T o < ¥ ii : mm ± 0.1 1.25 ±0.1 02SC4177 t 3 > y i j * > $ V ! : ' f è ï ï ? È £ T o o v m u s m ifX È

Contextual Info: 8_^_ 7_ _VL2J NOTE: THIS DEVICE IS ROHS COMPLIANT. REVISIONS SYM DESCRIPTION DATE APPROVED SYM DESCRIPTION DATE APPROVED NOTE R O H S STANDARD D 8/D EC /05' AARON A A A A ♦ ♦ C U ST O M ER DRAW ING FOR R E FE R A N C E ONLY, S A M P L E S A P P R O V A L A R E REQUIRED!!

Contextual Info: f Z 7 S C S -m O M S O N JÆ, I M » I [ L I ^ [ M i * S T 7 5 C 530 S T 7 5 C 540 SUPER INTEGRATED DEVICES WITH DSP, AFE & MEMORIES FOR TELEPHONY, MODEM, FAX OVER INTERNETS, POTS LINES PRELIM IN ARY DATA SUMMARIZED FEATURES (for detailed features, see page 4

Contextual Info: FAST CMOS OCTAL BUFFER/LINE DRIVER IDT54/74FCT240/A/C IDT54/74FCT241/A/C IDT54/74FCT244/A/C IDT54/74FCT540/A/C IDT54/74FCT541 /A/C FEATURES: DESCRIPTION: • Th e ID T octal buffer/line drivers are built using an advanced dual metal C M O S technology. The ID T 5 4/74 F C T 2 40/A /C ,

r 2501 kk 111

Abstract: nec 2501 nec 2501 kk 2SK2498 14MQ tea 1020 itt 2501 3Fp 1d r 2501 kk 250
Contextual Info: M O S Field Effect T ran sisto rs 2SK2498 N ^ - V * ; U X -f / \ ° 7 % y 5 1 > I l f 2SK2498liN51^^;UÌÉM M ° 7 - MOS FETT', “ M O S F E T >7 ^ f l * -f 7 51> T & , & f ê 7 7? ? ü . J . - 2 f f l W j ï ï ï à 3P Z < " jïX fW fà ïïià ^ M 'M T 'to

H35V

Contextual Info: IDT54/74FCT240T/AT/CT/DT - 2240T/AT/CT IDT54/74FCT241T/AT/CT/DT - 2241T/AT/CT IDT54/74FCT244T/AT/CT/DT - 2244T/AT/CT IDT54/74FCT540T/AT/CT IDT54/74FCT541/2541T/AT/CT FAST CMOS OCTAL BUFFER/LINE DRIVERS FEATURES: DESCRIPTION: • Common features: - Low input and output leakage <1

Contextual Info: t • S Ss— NEC h MOS M O S Field Effect P o w e r Transistor 2SK1123 1 — MOS FET N T .m m 2SK1123 ü , N tj iz i ^ MOS F E T T", 5 V i T ^ IC <Dtfi W M m w w n n t t m ì È . K j ~y^-> y ^ T t o y fy m Z fr'fS<, K, A mm; X ^ 3 .2 ± 0.2 < y ^> 7 W ÌÌ> ià tlT ^ 'Ò f2 tÒ ,

Contextual Info: NO D ESCRIPTIO N DATE A ADD MIS P A R T ND, 04.01.04 ADD D E S C R IPT IO N ADD 6.2±0.38 33.32±0.13 — 33.33±0.25 24.66±0.13 — 24.67±0.25 03.05 —— 03,O5±O,25 7.9 — 7.9±0.25 A 12.55 R E F.— 2.77 — 27.51 R E F.— 1 — 10.72 REF. — 39,14±0.38a.540±.015

2SA988

Abstract: 2sa988 transistor A0222-6 1T0266 2SA9881 NEC 41-A 002 PA33 T108 T210 T540
Contextual Info: i s I Silicon Transistor # W-MM # f i : mm) it ffijfftigils, Ì É ì S l t x 4 v & 'y 'T , 50 mA i x-60# K 7 ï r f f l O L x \tm x $ t t o s b îœ , to mmmmvtifê.x'to ss hFE *>-?, 120 v V,CEO : - hFE (Ic = - 1.0 mA) : 500 T Y P . (Ta = 25 °C )

UNC-2B 4-40

Abstract: 4-40 UNC-2B M 9580 9915 H A109 unc-2b
Contextual Info: 7 D R A W I N G MA DE IN T H I R D A NG L E P R O J E C T I O N T HI S D R A W I N G 15 U N P U B L I 5 H E D R E L E A S E D FOR P U B L I C A T I O N COPYRIGHT 19 BY AMP INCORPORATED. ALL 6 5 2 3 4 LOC 19 INTERNATIONAL RIGHTS DI ST BD RESERVED. R E V I5 I 0 N 5

CC 471K

Abstract: N74847 HA5114 HA-5114 VZ01 MM5114 40668E d2533
Contextual Info: Harris Semiconductor No. M M 5114 H arris A n alo g Novem ber 1991 H A -5 1 1 4 SPICE OPERATIONAL AMPLIFIER M A C R O -M O D EL Authors: Doug Youngblood and Bobby H uckabee Intro du ctio n This application note describes the SPICE macro-model for the H A -5114, a low noise quad op amp. The model was

IC-7033

Abstract: diode sg 5 ts 7900f
Contextual Info: C o m p o u n d Field E ffe ct P o w e r T ran sisto r ¿¿PA1 5 2 4 M O S F E T T ’V - f ' T .m nPA1524Ü, 7 f > r?'<4 x tt» >m m & i^ y ^ f if# W t N f - ^ T W U | ^ V - M O S F ETT', 5 V € ^ I C < 7 i * m i£ < , > X >f -y - f M U tlT l'& fz ì ò ,

2SJ153

Contextual Info: M O S Field Effect Pow er Transistor 2SJ153 P f^ ;U / N ° 7 - M O S FET I i f f l 2SJ153 i, MOS FET T, 5 V H i * IC (c J; è Æ æ œ S O T t ë f r i S i i t X ' f * < , y w / 'i # K, y x ' f •/ f - > 7 f > X f t W B 0 ( T O : mm „ i , f f i - i x T ^ S fc * > ,

736a

Abstract: stt5 117 ajg JE 170 JE 33 t1is 2SB736 2SB736A T108 T540
Contextual Info: •3— S 7 • £/— h- NEC Silicon Transistors iïf/ x fx # 2 S B 7 3 6 ,7 3 6 A W i t # o h FE^ ' * v \ O2SD780, ! m m hFE : 2 0 0 T Y P . ( V CE = —1 .0 V, Ic = —50 mA) 2SD 780At 3 > r i J / ( T a = m 25 iJT i-o °C ) S Bg- § f§ 2SB736 2SB736A

BDP 284

Abstract: BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529
Contextual Info: SIEMENS List of Types in Alphanumerical Order Type Ordering Code Page BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-01 BAR 15-01 BAR 16-01 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05

sc 6038 ic 8 pins

Abstract: sc 6038
Contextual Info: J W J ÏY * M C -4 2 1 0 0 0 A 9 1,048,576 X 9 -B it C M O S D y n a m ic R A M M odule NEC Electronics Inc. D escrip tion Pin C o n fig u ra tio n s The MC-421000A9 is a fast-page, 1,048,576-word by 9-bit C M O S dynamic RAM module, designed to operate from a single +5 volt power supply. Advanced C M O S

B041

Abstract: lju sot23
Contextual Info: TELEDYNE COMPONENTS 5öE D • ÖT17^02 ÜÜ0b4ai 5 _ * l SD1200, SD1201 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE HIGH-VOLTAGE D-MOS FETs ORDERING INFORMATION SD1200CHP Sorted Chip* In Conductive Waffle Pack TO-226AA TO-92 Packags TO-206AA (TO-18) Package

NEC AC03D

Abstract: AC03 nec TRIAC AC03 NEC AC03F 7504b SC-7504B triac ac03d nec AC03 AC03F ac03d
Contextual Info: - f — S 7 • 5/— h NEC r Ì Ì T / \ fZ AC03DJM, AC03DJM-Z AC03FJ M , AC03FJ M -Z 3 A "E— AC03r jJM , AC03r jJM ~Zi± , TRIAC > « ? Îl 3 A K T R IA C t \ ^ O ü L t °- ^ ^ 7 * J ± i ± 400 V, 600 V -üto #Ît o/n^-7'U .y K IC lc ftM & ffiÿ tifê H AC03r

transistor w bh 212

Abstract: SK FN 521 sol 4011 be 2SD1779 TN-6014 TN60 hia 51
Contextual Info: •7 s— "S7 • S ' — h - NEC ^ Silicon T ran sisto r 2SD1779 & m M M o « h FE -0 L * ' i f& V CE, „ t) f t w ^ - f i ^ mm) t - f - ' l $1 t L T f t i S T 'i - o hKE= 8 0 0 ~ 3 2 0 0 (a t V CE = 5 .0 V, Ic = 1 .0 A ) V CE(sat) = o / J '^ T * f F

J Fet marking 2 AW

Abstract: 56m1 lm 3773 2SJ210 marking 7tw VTA90
Contextual Info: 066 L UOjJBJOdJOQ Q3|\| IM I 6 6 I -ÍJEnUBf m z% a OSIH— SS — a OSI Mm 00Z 3,sl æ "M. K •M ¥ ® V 9 U Ì-J1 * M » ± <V Mi (as[nd)aj ^ ^ yra 00Í- + yui 002 + (oa)aj ® I!) S l < 02 + 0= SCIA SS0A 33 11 ¡SU y — A • 4 — .a 0= S0A ssa^

K40IN

Abstract: transistor BC 945 2SJ184 2SK1398 V23040
Contextual Info: = T— S> • S / — h MOS M O S Field E ffect T ran sis to r 2 S J 1 8 4 MOS F E T F E T T~fo[ , 2 S J1 8 4 !iP f - - v Î'^ f f iÊ M O S ' i i w j M X 2 . 5 "/ V V -f- > i & 9 " W k ’ X b X W M X è 6 X L '- J 9 ; u | n | « H ; i i ( t ê i É j i l T " Ì _ o

33 nec 125 t2

Abstract: AC10F dh 0734 AC10FGM AC10r AC10DGM AC10EGM AC10D
Contextual Info: T h y r is t o r s AC1ODGM.AC1OEGM.AC1 OFG M 10 A C 10r jG M m t m L v A ^E — ;P K T R IA C 10 A - 7 7 i '7 m ± t ± m v~6oo K TRIA CT", v ^ . f i : mm) t t . 10.5 M AX . 0 3.6 # 4.8 M AX . « o r - hhU K I , III, IV) T" 20 mA ^ —XCOtzishA'tfï&aX’h