54 ACT 14 Search Results

smd code F18

Abstract: act-s512k32n 5962-9461110HTC ACT-S512K32N-017P7Q 5962-9461110 CQFP 80 footprint cqfp 280
Contextual Info: ACT–S512K32 High Speed 16 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 512K x 8 SRAMs in one MCM ■ Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8 ■ Input and Output TTL & CMOS Compatible Design ■ Fast 17,20,25,35,45,55ns Access Times

IS42S81600B

Abstract: 42S16800B IS42S16800B-7TLI 2MX16X4 IS42S16800B IS42S16800B-6TL
Contextual Info: IS42S81600B IS42S16800B 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM JUNE 2009 FEATURES • Clock frequency: 167, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed

IS42S16160D

Abstract: IS42S16160D-7TLI
Contextual Info: IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg x 8, 16Meg x16 JUNE 2009 256-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed

T29 marking

Abstract: e61 marking code T45 to DB9 DB26 Outline T39
Contextual Info: Direct RDRAM K4R271669A/K4R441869A 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 1.02 January 2000 Page -1 Rev. 1.02 Jan. 2000 Direct RDRAM™ K4R271669A/K4R441869A Revision History Version 1.0 July 1999 - Preliminary

Voltage-Controlled-Attenuator

Abstract: OPA221 JEDEC J-STD-020d 842 FET ch8c *vp1208 AFE5807 AFE5808AZCF
Contextual Info: AFE5808A www.ti.com SLOS729B – OCTOBER 2011 – REVISED APRIL 2012 Fully Integrated, 8-Channel Ultrasound Analog Front End with Passive CW Mixer, 0.75 nV/rtHz, 14/12-Bit, 65 MSPS, 158 mW/CH Check for Samples: AFE5808A FEATURES APPLICATIONS • • • 1

K4R271669F

Contextual Info: Direct RDRAM K4R271669F 128Mbit RDRAM F-die 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.41 January 2004 Page -1 Version 1.41 Jan. 2004 Direct RDRAM™ K4R271669F Change History Version 1.4 ( September 2003 ) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)

K4R271669E-RcCS8

Abstract: K4R271669E
Contextual Info: Direct RDRAM K4R271669E 128Mbit RDRAM E-die 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Direct RDRAM™ K4R271669E Change History Version 1.4 ( July 2002 ) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)

Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH32S72PHH -5,-5L,-6,-6L,-7,-7L 2,329,519,104-BIT 32,354,432 - WORD BY 72-BIT Synchronous DRAM DESCRIPTION The MH32S72PHH is 32354432 - word by 72bit Synchronous DRAM module. This consists of nine

aladdin v

Abstract: FS01 ICS9148-111 9148-11
Contextual Info: ICS9148-111 Integrated Circuit Systems, Inc. Frequency Generator & Integrated Buffers for PENTIUM/ProTM Recommended Application: ALI Aladdin V™ mobile. Output Features: • 3 - CPUs @ 2.5V/3.3V, up to 100MHz. • 3 - AGPCLK @ 3.3V • 13 - SDRAM @ 3.3V, up to 100MHz.

74AC

Abstract: MC74AC11 MC74ACT11
Contextual Info: MC74AC11 MC74ACT11 Triple 3ĆInput AND Gate TRIPLE 3-INPUT AND GATE • Outputs Source/Sink 24 mA • ′ACT11 Has TTL Compatible Inputs VCC 14 13 12 11 10 9 8 N SUFFIX CASE 646-06 PLASTIC 1 2 3 4 5 6 7 GND D SUFFIX CASE 751A-03 PLASTIC MAXIMUM RATINGS* Symbol

SM81600E

Abstract: IS42SM16800E IS42SM81600E IS42SM16800E-7TLI IS42SM32400E IS42SM32400E-7T IS42SM16800E-7BLI
Contextual Info: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

IS42S32400D

Abstract: 42S32400D is42s32400d-6bli IS42S32400D-7TLI
Contextual Info: IS42S32400D 4Meg x 32 128-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 125, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge MARCH 2009 OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed

Contextual Info: Tem ic TEA8172 S e m i c o n d u c t o r s TV Vertical Deflection Output Amplifier Technology: Bipolar Features • Output peak current, I 5 = 2 A • • Flyback current, peak to peak, I 3 = 3 A Thermal protection, Tj > 140°C Block Diagram Figure 1. Block diagram

MH64S64APFH-5

Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH64S64APFH-5,-5L,-6,-6L,-7,-7L 4294967296-BIT 67108864 - WORD BY 64-BIT SynchronousDRAM DESCRIPTION The MH64S64APFH is 67108864 - word by 64-bit Synchronous DRAM module. This consists of

133M

Abstract: W981208AH
Contextual Info: W981208AH 4M x 8 bit x 4 Banks SDRAM Features • • • • • • • • • • • • • 3.3V ± 0.3V power supply Up to 133MHz clock frequency 4,194,304 words x 4 banks x 8 bits organization Auto Refresh and Self Refresh CAS latency: 2 and 3 Burst Length: 1, 2, 4, 8 , and full page

K4R761869A-GCT9

Abstract: K4R761869A K4R761869A-FCM8 K4R761869A-FCT9 K4R761869A-GCM8 K4R761869A-GCN1
Contextual Info: Direct RDRAM K4R761869A 576Mbit RDRAM A-die 1M x 18bit x 32s banks Direct RDRAMTM Version 1.41 January 2004 Page -1 Version 1.41 Jan. 2004 Direct RDRAM™ K4R761869A Change History Version 1.4( Sept. 2003) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)

K4R571669A-FCK8

Abstract: K4R881869A-FCK8 K4R881869A-FCM8 K4R881869A-FCM9 K4R881869A-FCN9 K4R881869A-FCT9
Contextual Info: Direct RDRAM K4R571669A/K4R881869A 256/288Mbit RDRAM A-die 512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Direct RDRAM™ K4R571669A/K4R881869A Change History Version 1.11( September 2001) - Preliminary

MC-458CB641ES

Abstract: MC-458CB641ES-A10 MC-458CB641ES-A80 MC-458CB641PS MC-458CB641PS-A10 MC-458CB641PS-A80 PD45128163 m14015
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CB641ES, 458CB641PS 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-458CB641ES and MC-458CB641PS are 8,388,608 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 4 pieces of 128M SDRAM: µPD45128163 are assembled.

MC-4516CB64ES

Abstract: MC-4516CB64ES-A10B MC-4516CB64PS MC-4516CB64PS-A10B PD45128841
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CB64ES, 4516CB64PS 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-4516CB64ES and MC-4516CB64PS are 16,777,216 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 128 M SDRAM: µPD45128841 are assembled.

ba 2nd year date sheet

Contextual Info: MITSUBISHI LSIs MH8S64AQFC -6,-6L,-7,-7L,-8,-8L 536,870,912-BIT 8,388,608 - WORD BY 64-BIT SynchronousDRAM DESCRIPTION The MH8S64AQFC is 8388608 - word by 64-bit Synchronous DRAM module. This consists of four industry standard 8Mx16 Synchronous DRAMs in TSOP and one industory standard EEPROM in

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CA727XFA 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CA727XFA is 16,777,216 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 128M SDRAM: µPD45128841 are assembled.

MC-4516CB647

Abstract: MC-4516CB647EF-A75 MC-4516CB647PF-A75 PD45128841 4516cb647pf
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CB647 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE ★ Description The MC-4516CB647EF and MC-4516CB647PF are 16,777,216 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 128M SDRAM: µPD45128841 are assembled.

Contextual Info: PRELIMINARY DATA SHEET 256M bits SDRAM EDS2504APTA 64M words x 4 bits EDS2508APTA (32M words × 8 bits) EDS2516APTA (16M words × 16 bits) Description Pin Configurations The EDS2504AP is a 256M bits SDRAM organized as 16,777,216 words × 4 bits × 4 banks. The EDS2508

K4R271669E

Contextual Info: Preliminary Direct RDRAM K4R271669E 128Mbit RDRAM E-die 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Preliminary Direct RDRAM™ K4R271669E Change History Version 1.4 ( July 2002 ) - Preliminary - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)