53M DIODE Search Results

transistor 1fp

Abstract: 52ga 414n 53m diode
Contextual Info: HÌLS1S1M/S2M/53M MINI MOLD TYPE PHOTO COUPLER • OUTLINE typ. ■ GENERAL DESCRIPTION The NJL5151M series are small package dual-in-line photo couplers, which consist of high power infrared emitting diode and high sensitve Si photo transistor. IL standards (File N o.E8256I)

Contextual Info: 1N6489+JAN Diodes General-Purpose Reference/Regulator Diode Military/High-RelY V Z Nom.(V) Reference Voltage4.7 @I(Z) (A) (Test Condition)53m Tolerance (%) P(D) Max. (W)1.5 Z(z) Max. (ê) Dyn. Imped.8.0 Temp Coef pp/10k2.5 Maximum Operating Temp (øC)175

Contextual Info: 1N6489+JANTXV Diodes General-Purpose Reference/Regulator Diode Military/High-RelY V Z Nom.(V) Reference Voltage4.7 @I(Z) (A) (Test Condition)53m Tolerance (%) P(D) Max. (W)1.5 Z(z) Max. (ê) Dyn. Imped.8.0 Temp Coef pp/10k2.5 Maximum Operating Temp (øC)175

ZXT951

Abstract: d1 marking code dpak transistor d marking code dpak transistor
Contextual Info: A Product Line of Diodes Incorporated ZXT951K Green 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR Features Mechanical Data • • • • • • • • • • • • BVCEO > -60V RSAT = 53mΩ Typical Continuous Collector Current IC = -6A Up to 15A Peak Current

CEP540N

Abstract: TF510 cep540
Contextual Info: CEP540N/CEB540N CEF540N N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 36A, RDS ON = 53mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

Contextual Info: 1N4732 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage4.7 @I(Z) (A) (Test Condition)53m Tolerance (%)10 P(D) Max. (W)1.0 Z(z) Max. (ê) Dyn. Imped.8.0 Temp Coef pp/10k2.6 Maximum Operating Temp (øC)200’

Contextual Info: 1N6489US+JAN Diodes General-Purpose Reference/Regulator Diode Military/High-RelY V Z Nom.(V) Reference Voltage4.7 @I(Z) (A) (Test Condition)53m Tolerance (%)5 P(D) Max. (W)1.5 Z(z) Max. (ê) Dyn. Imped.8 Temp Coef pp/10k.025ñ Maximum Operating Temp (øC)175

Contextual Info: ZM4732 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage4.7 @I(Z) (A) (Test Condition)53m Tolerance (%)10 P(D) Max. (W)1.0 Z(z) Max. (ê) Dyn. Imped.8.0 Temp Coef pp/10k Maximum Operating Temp (øC)200õ Package StyleDO-213AA

GP4953

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/08/08 REVISED DATE : GP4953 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -30V 53m -5A Description The GP4953 provide the designer with the best combination of fast switching, ruggedized device design, low

Contextual Info: CEP540L/CEB540L CEF540L N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 36A, RDS ON = 50mΩ @VGS = 10V. RDS(ON) = 53mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

CED540N

Contextual Info: CED540N/CEU540N N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 25A, RDS ON = 53mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package.

4953SS

Abstract: SSG4953 4953S mosfet vgs 5v 5a
Contextual Info: SSG4953 -5A, -30V,RDS ON 53mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOP-8 Description 0.19 0.25 0.40 0.90 The SSG4953 provide the designer with the best Combination of fast switching,

Contextual Info: Preliminary Datasheet HITK0303MP 30V, 3.7A, 53mmax. Silicon N Channel MOS FET Power Switching R07DS0484EJ0200 Rev.2.00 May 09, 2013 Features • Low on-resistance RDS on = 42 m typ (VGS = 10 V, ID = 1.8 A)  Low drive current  High speed switching

Contextual Info: CEM4401 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -5.4A, RDS ON = 53mΩ @VGS = -10V. RDS(ON) = 80mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

marking 34P sot 23

Abstract: DMG3415U "marking code" 34P sot23 dmg3415u-7 J-STD-020D marking code 34P
Contextual Info: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance • 42.5mΩ @ VGS = -4.5V • 53mΩ @ VGS = -2.5V • 71mΩ @ VGS = -1.8V

C3021LD

Abstract: DMC3021 DMC3021LSD DMC3021LSD-13 LOGO TD C3021 C3021l AT/C3021LD
Contextual Info: DMC3021LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • NEW PRODUCT • • • • • • • • Low On-Resistance N-Channel: 21mΩ @ 10V 32mΩ @ 4.5V P-Channel: 39mΩ @ 10V 53mΩ @ 4.5V Low Input Capacitance Fast Switching Speed

CEM4953

Abstract: diode 640
Contextual Info: CEM4953 Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4.9A, RDS ON = 53mΩ @VGS = -10V. RDS(ON) = 95mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

cep540n

Contextual Info: CEP540N/CEB540N N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 36A, RDS ON = 53mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package.

Contextual Info: LESHAN RADIO COMPANY, LTD. LP9435ET1G GENERAL FEATURES ● VDS = -30V,ID = -5.3A RDS ON < 85mΩ @ VGS=-4.5V RDS(ON) < 53mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D D D 8 7 D

DMN2104L-7

Abstract: J-STD-020D DMN2104L
Contextual Info: DMN2104L N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • Low On-Resistance • 53mΩ @VGS = 4.5V • 104mΩ @VGS = 2.5V Low Gate Threshold Voltage

APM4953

Abstract: PM4953 ANPEC Anpec Electronics marking G5 MOSFET mosfet 4953 5H MARKING 6H MARKING 27BSC 4953 mosfet
Contextual Info: APM4953 Dual P-Channel Enhancement Mode MOSFET Features • • • • Pin Description -30V/-4.9A, RDS ON = 53mΩ(typ.) @ VGS = -10V 5 RDS(ON) = 80mΩ(typ.) @ VGS = -4.5V & , % , Super High Density Cell Design / Reliable and Rugged 5 ! $ , SO-8 Package

Contextual Info: DMC3032LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • N EW PRODU CT • • • • • • • • Low On-Resistance N-Channel: 32m @ 10V 46m @ 4.5V P-Channel: 39m @ 10V 53m @ 4.5V Low Input Capacitance Fast Switching Speed

Contextual Info: SSG4953 -5A, -30V,RDS ON 53mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description 0.19 0.25 0.40 0.90 The SSG4953 provide the designer with the best Combination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness.

APM60

Contextual Info: APM6003NF N-Channel Enhancement Mode MOSFET Features • Pin Description SD 60V/26A, G RDS ON =38mΩ (typ.) @ VGS=10V RDS(ON)=53mΩ (typ.) @ VGS=4.5V • • Reliable and Rugged Top View of TO-220 Lead Free and Green Devices Available D (RoHS Compliant)