BSS68
Abstract: APX-100 k 30 transistor
Contextual Info: N AMER P H I L I P S / D I S C R E T E fciTE D • bb.53ci31 0027Ô72 I 7Tb H A P X BSS68 HIGH-VOLTAGE P-N-P TRANSISTOR Silicon planar epitaxial transistor in a plastic TO-92 envelope. It is intended fo r anode switching in dynamically driven numerical indicator tubes and as general purpose switching device.
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bss68apx-100k 30 transistor |
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NPN PNP SOT-143
Abstract: BCV63 BCV64 TI3030 700 v power transistor
Contextual Info: DEVELOPMENT DATA bt>53ci31 GDlSbO? 3 [ T h is data sheet contains advance inform ation and BCV63 specifications are subject to change w ith out notice. N AUER PHILIPS/DISCRETE ObE » r - 2 * ? - 0 ,7 SILICON PLANAR TRANSISTOR Double N-P-N transistor in a plastic SOT-143 envelope. Intended for Schmitt-trigger applications.
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bcv63ot-143bcv64npn pnp sot-143+2ti3030700 v power transistor
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C122
Abstract: philips thyristors C122F CI22 IEC134 BC122 C122 Series
Contextual Info: N "a~H~E~R P H IL IP S /D IS C R E T E ObE D • ^53^31 D D lllf ll 7 m C122 SERIES THYRISTORS The C l 22 series devices are glass-passivated thyristors featuring ailoy-bonding thus beinq oarticularlv suitable m situations creating high fatigue stresses involved in thermal cycling and repeated switching
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tq-220abc122fc122philips thyristors+4ci22iec134bc122c122 series
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BYX50-200
Abstract: BYX50 PHILIPS BYX50-200 ALPS 102 IEC134
Contextual Info: N AUER PH IL IPS/DISCR ETE TDD D 1^53131 0010S20 T BYX50 SERIES T -0 3 -/7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes in DO-4 metal envelopes, intended for use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications. The series consists of the following types:
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0010s20byx50t-03-/7byx50-200+6byx50-10-deb53t31philips byx50-200alps 102iec134
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Contextual Info: Philips Semiconductors H bb53T31 0D32142 T34 M A P X _Product specification NPN 3 GHz w ideband transistor ^ BFW 92A N AllER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN transistor in a plastic SOT37 envelope. It is primarily intended for use in amplifiers in the 40 to 860 MHz
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bb53t310d32142bfw92a/02bfw92a+1bfw92
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BLX91CB
Abstract: IEC134 transistor 3609 amperex vc 100
Contextual Info: N AMER P H I L I P S / D ISC RETE ObE_ I> Ü 1^53 ^31 0 01404 t, b • 0800130 AMPEREX, HICKSVILLE _ 86D 01808 D 'T ~ 3 3 - ô $ II BLX91CB SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N silicon planar epitaxial transistor primarily designed fo r use in fast-switching wide-band video
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oq14g4bblx91cbot-48/3iec134+2transistor 3609amperex vc 100
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sot62
Abstract: BUW14
Contextual Info: N AUER PHILIPS/DISCRETE bTE T> m bbSBTBl 0 C]E05b 3 =530 • APX P hilips S em roduct sp e cifica tio n Silicon diffused power transistor BUW14 GENERAL DESCRIPTION High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in
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dqe65b3buw14sot62 |
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