5321O Search Results

DIC20

Contextual Info: CMOS 2M 256K x 8 MROM FEATURES DESCRIPTION • 262,144 words x 8 bit organization The LH532100B is a 2M-bit m ask-program m able ROM organized as 262,144 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Low-power consumption: Operating: 275 mW (MAX.)

Contextual Info: LH532100B-1 FEATURES • 262,144 words x 8 bit organization CMOS 2M 256K x 8 MROM PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TOP VIEW • Access time: 120 ns (MAX.) / O E ^Ô Ë ^D C H • Static operation • TTL compatible I/O • Three-state outputs • Power consumption:

Contextual Info: DRAM CARD 4 Mega Byte KMCV5321000 3.3V Operating 1M x 32 / 2M x 16 Fast Page Mode GEN ERA L DESCRIPTIO N FEATURES • P e rfo rm an ce ra ng e : T h e K M C V 5 3 2 1 0 0 0 is th e in d u s try s ta n d a rd high c a p a c ity DRAM m e m o ry c a rd and