531620 Search Results

Contextual Info: TOS H IB A LOGIC/MEMORY 42E D • cJDc)75Ma □ Q 2 1 t12b Q ■ T0S2 16M BIT (1M WORD X 16 BIT/2M WORD x 8BIT) CMOS MASK ROM ■ » n » ' 7 ^ - / 3 -J P R E L IM IN A R Y The T C 5316200A P / A F is a 16,777,216 bits read only memory organized as 1,048,576 words by 16

Contextual Info: 16M BIT 1 M W O R D X 16 B IT /2 M W O R D X 8B IT CMOS MASK RO M PRELIMINARY DESCRIPTION T h e T C 5316200A P / A F is a 16,777,216 b its read only m em ory organized as 1,048,576 w ords by 16 b its w h e n BYTE is logical hig h , an d is organized a s 2,097,152 w ords by 8 b its w hen BYTE is logical

TC5716200D-150

Abstract: 5716200D
Contextual Info: TOSHIBA TC5716200D-150, -200 SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY D escription T heT C 5716200D is a 16,777,216 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It is

Contextual Info: SILICON STACKED GATE MOS INTEGRATED CIRCUIT - 5316200AP/AF 16M BIT 1M W O R D x 16 B IT / 2 M W ORD x 8 B IT C M O S M A S K RO M DESCRIPTIO N T h e T C 5 3 1 6 2 0 0 A P / A F is a 1 6 ,7 7 7 ,2 1 6 b its r e a d o n ly m e m o ry o rg a n iz e d a s 1 ,0 4 8 ,5 7 6 w o rd s b y 1 6

MB8316200

Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
Contextual Info: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S

TEFABLOC

Abstract: DIN 46320 DIN VDE 470, DIN EN 60529, IEC 529 pg21 cable gland BRASS 11x34 kerosine Santoprene 70 shore A 4220351 NBR 70
Contextual Info: Table of Contents Standard Straight-Through Polyamide PG, Metric, NPT . . . . . . . . . . . . . . . . . . .4 Standard Straight-Through Nickel-Plated Brass PG, Metric, NPT . . . . . . . . . . . . . . . . . . .5 Flathead and Multi Conductor Sealing Inserts . . . . . . . . . . . . . . . . . . . . .6

Contextual Info: SILICON STACKED GATE MOS INTEGRATED CIRCUIT TC5716200D-150, -200-16 M E G A BIT 1,048,576 W O R D x 16 B IT / 2,097,152 W O R D X 8BIT C M O S U.V. ERA SA B LE A N D ELECTRICALLY PR O G R A M M A B L E R EA D O N LY M E M O R Y D ESCRIPTIO N

TC5316200CP

Abstract: tc5316200
Contextual Info: TOSHIBA 5316200CP/CF/CFT PRELIMINARY SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS MASK ROM Description The 5316200CP/CF/CFT is a 16,777,216 bit read only memory organized as 1,048,576 w ords by 16 bits when BY I t is logical high, or as 2,097,152 w ords by 8 bits when BYTE is logical low.

531620

Contextual Info: SILICON STACKED GATE MOS INTEGRATED CIRCUIT - 5316200BP/BF 16M BIT 1M W O R D x 16 B IT / 2 M W ORD 8 B IT C M O S M A S K R O M X D ESCRIPTIO N T h e T C 5 3 1 6 2 0 0 B P / B F is a 1 6 ,7 7 7 ,2 1 6 b its re a d on ly m em ory o rgan ize d a s 1 ,0 4 8 ,5 7 6 w ords by 16

tefabloc

Abstract: TEFABLOC to TEFABLOC *823
Contextual Info: Cable Gland / Industrial Multi-Conductor PG - Polyamide Material: • Body: Polyamide PA 6 25 % Glass-fiber Reinforced • Seal: Tefabloc Characteristics: • PG thread • Multi-holed seal inserts Technical properties: • Gas- and watertight • Completely twist protected

TEFABLOC *823

Contextual Info: 30478_LTSR_2014_Final.qxp_LTSR_2014.QXD 2014-06-10 5:49 PM Page 10 Body Polyamide Applications: • Machines and devices • Measuring and control engineering • Plant installations Temperature Range -30 to 120°C -22 to 248°F Outer thread H E L Hole Hole

Contextual Info: SILICON STACKED GATE MOS INTEGRATED CIRCUIT TENTATIVE 16M BIT 1M W O R D x 16 B 1 T /2 M WORD x 8 B IT CMOS M A S K ROM DESCRIPTION T h e T C 5 3 1 6 2 0 0 A F T is a 1 6 ,7 7 7 ,2 1 6 b its re a d on ly m em ory o rgan ize d a s 1 ,0 4 8 ,5 7 6 w ords by 16 b its

Contextual Info: w îîisaï iijlili 16M BIT 1 M W O RD x 16 B1T/2M W O RD x 8BIT CM O S M ASK ROM DESCRIPTION The 5316200P/F is a 16,777,216 bits read only memory organized as 1,048,576 words by 16 bits when BYTE is logical high, and is organized as 2,097,152 words by 8 bits, when BYTE is logical low.

Contextual Info: LTSR_012010.QXD_LTSR_062006 b .QXD 12/20/12 1:42 PM Page 9 Cable Gland / Industrial Multi-Conductor (PG) - Polyamide Material: • Body: Polyamide PA 6 25 % Glass-fiber Reinforced • Seal: Tefabloc Characteristics: • PG thread • Multi-holed seal inserts

m32x1.5 metric thread data

Contextual Info: 30478_LTSR_Cover_2014.qxp_Altech_LGCover2005.QXD 2014-06-17 4:40 PM Page 1 Altech Corporation 35 Royal Road Flemington, NJ 08822-6000 P 908.806.9400 • F 908.806.9490 www.altechcorp.com Altech Corp. 365-062014-3000 Printed June 2014 30478_LTSR_2014_Final.qxp_LTSR_2014.QXD 2014-06-10 5:48 PM Page 2

5213402

Abstract: 25X15 TEFABLOC *823 TEFABLOC 3800369 NW79 M32 cable gland TEFABLOC 178 40 A 5212 72173-1
Contextual Info: Table of Contents Standard Straight-Through Polyamide PG, Metric, NPT . . . . . . . . . . . . . . . . . . .4 Standard Straight-Through Nickel-Plated Brass PG, Metric, NPT . . . . . . . . . . . . . . . . . . .5 Industrial Polystyrene Straight-Through PG, Metric . . . . . . . . . . . . . . . . . . . . .6

Contextual Info: LTSR_012010.QXD_LTSR_062006 b .QXD 12/20/12 1:42 PM Page 3 Table of Contents Standard Straight-Through Polyamide PG, Metric, NPT . . . . . . . . . . . . . .4 Standard Straight-Through Nickel-Plated Brass PG, Metric, NPT . . . . . . . . . . . . . .5 Flathead and Multi Conductor