52UL Search Results

HY27UF082G2A

Abstract: HY27UF162G2A hy27uf082G hy27uf082 52-ULGA hynix nand 2G hynix nand flash 2gb HY27UF hynix nand hynix nand spare area
Contextual Info: HY27UF 08/16 2G2A Series 2Gbit (256Mx8bit/128Mx16bit) NAND Flash 2Gb NAND FLASH HY27UF082G2A HY27UF162G2A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

K9F1G08U0A-PCB0

Contextual Info: Preliminary FLASH MEMORY K9F1G08R0A K9F1G08U0A K9K2G08U1A Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26)

K9F4G08U0M

Abstract: K9F4G08U 52-ULGA 52ULGA K9K8G08U1M K9F4G08U0M-ICB0 K9F4G08 81h-10h K9F4G08U0M-YCB
Contextual Info: Advance FLASH MEMORY K9K8G08U1M K9F4G08U0M Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Nov. 15. 2004 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

HY27UH088G2M

Contextual Info: HY27UH088G 2/D M Series 8Gbit (1Gx8bit) NAND Flash Document Title 8Gbit (1Gx8bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark May. 13. 2005 Preliminary May. 23. 2005 Preliminary Jun. 13. 2005 Preliminary Jun. 14. 2005

hy27uf082

Abstract: hy27uf082G
Contextual Info: Preliminary HY27UF 08/16 2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Document Title 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark Dec. 2004 Preliminary May. 23. 2005 Preliminary

hy27uf082G

Contextual Info: HY27UF 08/16 2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Document Title 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark Dec. 2004 Preliminary May. 23. 2005 Preliminary Aug. 09. 2005

HY27UF084

Abstract: hynix nand flash 4Gb HY27UF084G2M 52-ULGA
Contextual Info: HY27UF084G2M Series 4Gbit 512Mx8bit NAND Flash 4Gb NAND FLASH HY27UF084G2M This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY27UG088G5M

Abstract: HY27UG088G5 HY27UG088G2M HY27U*G5M HY27UG088G HY270 HY27UG HY27UG088GDM HY27UG088G2M-TP WP 39
Contextual Info: Preliminary HY27UG088G 2/5/D M Series 8Gbit (1Gx8bit) NAND Flash 8Gb NAND FLASH HY27UG088G2M HY27UG088G5M HY27UG088GDM This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

K9F2G08U0M-PCB0

Abstract: 512M x 8 Bit NAND Flash Memory K9F2G08U0M K9F2G08U0M-XIB0 K9F2G08U0M-YCB0 48-pin TSOP (I) flash memory K9F2G08U0 SAMSUNG NAND Flash Qualification Report samsung toggle mode NAND K9K4G08U1M
Contextual Info: K9K4G08U1M K9F2G08U0M FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

nand hamming code 2k bytes

Contextual Info: Preliminary FLASH MEMORY K9K4G08U1M K9F2G08U0M K9F2G16U0M Document Title 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001 Advance 0.1 1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device Page 34

K9F4G08U0B

Abstract: K9F4G08U0B-PCB0 K9G4G08U0B Samsung k9f4g08u0b SAMSUNG 4gb NAND Flash Qualification Report K9F4G08U0B-I SAMSUNG NAND Flash Qualification Report K9G4G08B0B SAMSUNG 256Mb NAND Flash Qualification Reliability k9f4g08u0bpcb0
Contextual Info: Advance FLASH MEMORY K9K8G08U1B K9F4G08U0B K9F4G08B0B K9XXG08XXB INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

K9F4G08U0M

Abstract: two-plane program nand
Contextual Info: Advance FLASH MEMORY K9K8G08U1M K9F4G08U0M Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revision No 0.0 0.1 0.2 History Draft Date Remark 1. Initial issue 2. two-plane page program technical note is modified. p27, p35 3. Figure 17.(p37) is modified.

hy27uf082g2b

Abstract: hy27uf082G hy27uf082 hy27uf082G2 HY27UF082G2B-F hynix nand hynix nand PROGRAMMING hynix nand flash 2gb 52-ULGA hynix nand edc spare area code
Contextual Info: 1 HY27UF 08/16 2G2B Series 2Gbit (256Mx8bit) NAND Flash 2Gb NAND FLASH HY27UF(08/16)2G2B This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: HY27UF084G2M Series 4Gbit 512Mx8bit NAND Flash 4Gb NAND FLASH HY27UF084G2M This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY27UG

Abstract: hynix nand HY27UG084G2M
Contextual Info: Preliminary HY27UG 08/16 4G(2/D)M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Document Title 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark May. 13. 2005 Preliminary May. 23. 2005

HYNIX HY27UH08AG5M

Abstract: HY27UH08AG5M hy27u*08ag5 hynix nand Hynix 16Gb Nand flash 16G nand HY27U*G5M hynix nand PROGRAMMING marking GG uLGA
Contextual Info: HY27UH08AG 5/D M Series 16Gbit (2Gx8bit) NAND Flash 16Gb NAND FLASH HY27UH08AG5M HY27UH08AGDM This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

hy27uf082

Abstract: hy27uf082G2 hy27uf082G HY27UF082G2A HY27UF162G2A hynix nand 2G hynix nand flash 2gb 2gbit HY27UF hynix nand flash 4Gb
Contextual Info: HY27UF 08/16 2G2A Series 2Gbit (256Mx8bit/128Mx16bit) NAND Flash 2Gb NAND FLASH HY27UF082G2A HY27UF162G2A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

hynix nand flash otp

Abstract: HY27UG088G HY27UG088G5M HY27UG088G5 hynix nand 8G uLGA hynix nand flash HY27UG088
Contextual Info: HY27UG088G 5/D M Series 8Gbit (1Gx8bit) NAND Flash 8Gb NAND FLASH HY27UG088G5M HY27UG088GDM This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

512M x 8 Bit NAND Flash Memory

Abstract: samsung 2GB Nand flash samsung 8Gb nand flash K9F4G08U0M-PCB0 8bit nand flash K9F4G08U0M 52ULGA K9K8G08U1M K9XXG08UXM-XIB0 K9F4G08
Contextual Info: K9K8G08U1M K9F4G08U0M FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

HY27UG084G2M

Abstract: HY27UG164G2M 52-ULGA hynix nand 4G HY27UG HY27UG084G2 HY27UG084GDM HY27UG084G
Contextual Info: HY27UG 08/16 4G(2/D)M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Document Title 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark May. 13. 2005 Preliminary May. 23. 2005 Preliminary

HYNIX HY27UH08AG5M

Abstract: HY27UH08AG5M hynix nand spare area 16gb hy27u*08ag5 HY27UH08AGDM hynix nand flash Hynix 16Gb Nand flash
Contextual Info: Preliminary HY27UH08AG 5/D M Series 16Gbit (2Gx8bit) NAND Flash 16Gb NAND FLASH HY27UH08AG5M HY27UH08AGDM This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

K9F2G08R0A

Contextual Info: K9F2G08R0A K9F2G08U0A FLASH MEMORY K9F2G08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

512M x 8 Bit NAND Flash Memory

Abstract: K9F2G16U0M K9F2G08U0M K9F2G08U0M-PCB0 samsung toggle mode NAND Serial NAND K9K4G08U1M K9F2G08Q0M-PCB0
Contextual Info: Preliminary FLASH MEMORY K9K4G08U1M K9F2G08U0M K9F2G16U0M Document Title 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001 Advance 0.1 1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device Page 34

K9F1G08U0AYCB0

Abstract: K9F1G08U0A K9F1G08X0A-XIB0 1g nand mcp K9F1G08U0A-PCB0 2112x8 K9F1G08R0A SAMSUNG MCP K9F1G08X0A K9F1G08
Contextual Info: K9F1G08R0A K9F1G08U0A K9K2G08U1A FLASH MEMORY Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26)