52N10 Search Results
52N10 Price and Stock
Infineon Technologies AG BSC252N10NSFGATMA1MOSFET N-CH 100V 7.2A/40A TDSON |
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BSC252N10NSFGATMA1 | Digi-Reel | 12,159 | 1 |
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BSC252N10NSFGATMA1 | Reel | 26 Weeks | 5,000 |
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BSC252N10NSFGATMA1 | 26,893 |
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BSC252N10NSFGATMA1 | Bulk | 1 |
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BSC252N10NSFGATMA1 | Reel | 20,000 | 5,000 |
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BSC252N10NSFGATMA1 | 7,500 |
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BSC252N10NSFGATMA1 | 5,000 | 27 Weeks | 5,000 |
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BSC252N10NSFGATMA1 | 5,000 | 1 |
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BSC252N10NSFGATMA1 | 6,000 |
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Goford Semiconductor GT52N10D5N100V,RD(MAX)<7.5M@10V,RD(MAX)<1 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GT52N10D5 | Digi-Reel | 11,759 | 1 |
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Infineon Technologies AG IPD052N10NF2SATMA1MOSFET |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD052N10NF2SATMA1 | Tube | 1,863 | 1 |
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IPD052N10NF2SATMA1 | Reel | 18 Weeks | 2,000 |
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IPD052N10NF2SATMA1 | 1,955 |
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IPD052N10NF2SATMA1 | Cut Tape | 1,970 | 1 |
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IPD052N10NF2SATMA1 | 2,000 | 2,000 |
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IPD052N10NF2SATMA1 | 19 Weeks | 2,000 |
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Goford Semiconductor GT52N10TN100V,RD(MAX)<9M@10V,RD(MAX)<15M |
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GT52N10T | Tube | 135 | 1 |
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Honeywell Sensing and Control AML52-N10WRECTANGULAR BUTTON W/NEON |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AML52-N10W | Bulk | 15 | 1 |
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AML52-N10W | 342 |
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52N10 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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NTB52N10T4G
Abstract: transistor gfs 52n10g AN569 NTB52N10 NTB52N10G NTB52N10T4
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NTB52N10 NTB52N10/D NTB52N10T4G transistor gfs 52n10g AN569 NTB52N10 NTB52N10G NTB52N10T4 | |
52N10GContextual Info: 52N10 Power MOSFET 52 Amps, 100 Volts N−Channel Enhancement−Mode D2PAK http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature |
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NTB52N10 NTB52N10/D 52N10G | |
52N10G
Abstract: NTB52N10T4G 52n10 AN569 NTB52N10 NTB52N10G NTB52N10T4
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NTB52N10 NTB52N10/D 52N10G NTB52N10T4G 52n10 AN569 NTB52N10 NTB52N10G NTB52N10T4 |