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    52N10 Search Results

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    Infineon Technologies AG BSC252N10NSFGATMA1

    MOSFET N-CH 100V 7.2A/40A TDSON
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    DigiKey () BSC252N10NSFGATMA1 Digi-Reel 12,159 1
    • 1 $1.41
    • 10 $0.98
    • 100 $0.72
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    BSC252N10NSFGATMA1 Cut Tape 12,159 1
    • 1 $1.41
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    BSC252N10NSFGATMA1 Reel 10,000 5,000
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    Avnet Americas BSC252N10NSFGATMA1 Reel 26 Weeks 5,000
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    Mouser Electronics BSC252N10NSFGATMA1 26,893
    • 1 $1.47
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    Newark BSC252N10NSFGATMA1 Bulk 1
    • 1 $1.38
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    Rutronik BSC252N10NSFGATMA1 Reel 20,000 5,000
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    Chip Stock BSC252N10NSFGATMA1 7,500
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    EBV Elektronik BSC252N10NSFGATMA1 5,000 27 Weeks 5,000
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    New Advantage Corporation BSC252N10NSFGATMA1 5,000 1
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    Win Source Electronics BSC252N10NSFGATMA1 6,000
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    Goford Semiconductor GT52N10D5

    N100V,RD(MAX)<7.5M@10V,RD(MAX)<1
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    DigiKey () GT52N10D5 Digi-Reel 11,759 1
    • 1 $2.29
    • 10 $1.47
    • 100 $1.00
    • 1000 $0.77
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    GT52N10D5 Cut Tape 11,759 1
    • 1 $2.29
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    GT52N10D5 Reel 5,000 5,000
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    Infineon Technologies AG IPD052N10NF2SATMA1

    MOSFET
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    DigiKey IPD052N10NF2SATMA1 Tube 1,863 1
    • 1 $2.48
    • 10 $1.60
    • 100 $1.09
    • 1000 $0.81
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    Avnet Americas IPD052N10NF2SATMA1 Reel 18 Weeks 2,000
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    Mouser Electronics IPD052N10NF2SATMA1 1,955
    • 1 $2.52
    • 10 $1.62
    • 100 $1.12
    • 1000 $0.82
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    Newark IPD052N10NF2SATMA1 Cut Tape 1,970 1
    • 1 $2.89
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    TME IPD052N10NF2SATMA1 2,000 2,000
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    EBV Elektronik IPD052N10NF2SATMA1 19 Weeks 2,000
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    Goford Semiconductor GT52N10T

    N100V,RD(MAX)<9M@10V,RD(MAX)<15M
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    DigiKey GT52N10T Tube 135 1
    • 1 $2.47
    • 10 $2.47
    • 100 $1.08
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    Honeywell Sensing and Control AML52-N10W

    RECTANGULAR BUTTON W/NEON
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    DigiKey AML52-N10W Bulk 15 1
    • 1 $15.78
    • 10 $14.29
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    Master Electronics AML52-N10W 342
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    • 10 $4.76
    • 100 $2.95
    • 1000 $2.81
    • 10000 $2.78
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    52N10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NTB52N10T4G

    Abstract: transistor gfs 52n10g AN569 NTB52N10 NTB52N10G NTB52N10T4
    Contextual Info: 52N10 Power MOSFET 52 Amps, 100 Volts N−Channel Enhancement−Mode D2PAK http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original
    NTB52N10 NTB52N10/D NTB52N10T4G transistor gfs 52n10g AN569 NTB52N10 NTB52N10G NTB52N10T4 PDF

    52N10G

    Contextual Info: 52N10 Power MOSFET 52 Amps, 100 Volts N−Channel Enhancement−Mode D2PAK http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original
    NTB52N10 NTB52N10/D 52N10G PDF

    52N10G

    Abstract: NTB52N10T4G 52n10 AN569 NTB52N10 NTB52N10G NTB52N10T4
    Contextual Info: 52N10 Power MOSFET 52 Amps, 100 Volts N−Channel Enhancement−Mode D2PAK http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original
    NTB52N10 NTB52N10/D 52N10G NTB52N10T4G 52n10 AN569 NTB52N10 NTB52N10G NTB52N10T4 PDF