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    52N10 Search Results

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    52N10 Price and Stock

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    Goford Semiconductor GT52N10D5

    N100V,RD(MAX)<7.5M@10V,RD(MAX)<1
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    DigiKey () GT52N10D5 Tape & Reel 10,759 5,000
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    GT52N10D5 Cut Tape 5,759 1
    • 1 $2.15
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    GT52N10D5 Digi-Reel 5,759 1
    • 1 $2.15
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    TME GT52N10D5 1
    • 1 $0.94
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    Goford Semiconductor GT52N10T

    MOSFET N-CH 100V 70A TO-220
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    DigiKey () GT52N10T Tube 10,000 2,000
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    GT52N10T Tube 93 1
    • 1 $2.25
    • 10 $1.44
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    TME GT52N10T 1
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    Rochester Electronics LLC BSC152N10NSFG

    N-CHANNEL POWER MOSFET
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    DigiKey BSC152N10NSFG Bulk 9,249 169
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    Infineon Technologies AG IPD052N10NF2SATMA1

    MOSFET
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    DigiKey () IPD052N10NF2SATMA1 Cut Tape 3,412 1
    • 1 $2.70
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    IPD052N10NF2SATMA1 Digi-Reel 3,412 1
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    IPD052N10NF2SATMA1 Tape & Reel 3,412 2,000
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    Avnet Americas IPD052N10NF2SATMA1 Tape & Reel 18 Weeks 2,000
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    Mouser Electronics IPD052N10NF2SATMA1 1,458
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    Newark () IPD052N10NF2SATMA1 Tape & Reel 1,238 100
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    IPD052N10NF2SATMA1 Cut Tape 1,238 1
    • 1 $3.14
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    TME IPD052N10NF2SATMA1 2,000
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    EBV Elektronik IPD052N10NF2SATMA1 19 Weeks 2,000
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    Infineon Technologies AG BSC252N10NSFGATMA1

    MOSFET N-CH 100V 7.2A/40A TDSON
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    DigiKey () BSC252N10NSFGATMA1 Cut Tape 30 1
    • 1 $2.44
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    BSC252N10NSFGATMA1 Tape & Reel 30 5,000
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    BSC252N10NSFGATMA1 Digi-Reel 30 1
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    Avnet Americas BSC252N10NSFGATMA1 Tape & Reel 52 Weeks 5,000
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    Mouser Electronics BSC252N10NSFGATMA1
    • 1 $2.30
    • 10 $1.12
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    • 1000 $0.80
    • 10000 $0.67
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    Newark BSC252N10NSFGATMA1 Bulk 1
    • 1 $2.39
    • 10 $1.53
    • 100 $1.04
    • 1000 $0.81
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    TME BSC252N10NSFGATMA1 5,000
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    EBV Elektronik BSC252N10NSFGATMA1 53 Weeks 5,000
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    Win Source Electronics BSC252N10NSFGATMA1 4,210
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    Find more 52N10 price and stock on Findchips.com

    52N10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NTB52N10T4G

    Abstract: transistor gfs 52n10g AN569 NTB52N10 NTB52N10G NTB52N10T4
    Contextual Info: 52N10 Power MOSFET 52 Amps, 100 Volts N−Channel Enhancement−Mode D2PAK http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		NTB52N10 NTB52N10/D NTB52N10T4G transistor gfs 52n10g AN569 NTB52N10 NTB52N10G NTB52N10T4 PDF

    52N10G

    Contextual Info: 52N10 Power MOSFET 52 Amps, 100 Volts N−Channel Enhancement−Mode D2PAK http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		NTB52N10 NTB52N10/D 52N10G PDF

    52N10G

    Abstract: NTB52N10T4G 52n10 AN569 NTB52N10 NTB52N10G NTB52N10T4
    Contextual Info: 52N10 Power MOSFET 52 Amps, 100 Volts N−Channel Enhancement−Mode D2PAK http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		NTB52N10 NTB52N10/D 52N10G NTB52N10T4G 52n10 AN569 NTB52N10 NTB52N10G NTB52N10T4 PDF