52N10 Search Results
52N10 Price and Stock
Infineon Technologies AG BSC252N10NSFGATMA1Transistor: N-MOSFET; unipolar; 100V; 40A; 78W; PG-TDSON-8 |
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BSC252N10NSFGATMA1 | 5,000 |
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BSC252N10NSFGATMA1 | Tape & Reel | 52 Weeks | 5,000 |
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BSC252N10NSFGATMA1 |
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BSC252N10NSFGATMA1 | 53 Weeks | 5,000 |
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BSC252N10NSFGATMA1 | 27,240 |
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IXYS Corporation IXFN52N100XModule; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXFN52N100X | 1 |
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IXFN52N100X | 113 |
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IXFN52N100X | Tube | 300 |
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Goford Semiconductor GT52N10D5Transistor: N-MOSFET; SGT; unipolar; 100V; 71A; 100W; DFN5x6-8 |
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GT52N10D5 | 1 |
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Infineon Technologies AG IPD052N10NF2SATMA1Transistor: N-MOSFET |
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IPD052N10NF2SATMA1 | 2,000 |
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IPD052N10NF2SATMA1 | Tape & Reel | 15 Weeks | 2,000 |
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IPD052N10NF2SATMA1 | 1,326 |
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IPD052N10NF2SATMA1 | Tape & Reel | 1,214 | 100 |
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| IPD052N10NF2SATMA1 | Cut Tape | 1,214 | 1 |
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IPD052N10NF2SATMA1 | 1 |
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IPD052N10NF2SATMA1 | 19 Weeks | 2,000 |
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IXYS Corporation IXFK52N100XTransistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXFK52N100X | 1 |
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IXFK52N100X |
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IXFK52N100X | Tube | 300 |
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52N10 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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NTB52N10T4G
Abstract: transistor gfs 52n10g AN569 NTB52N10 NTB52N10G NTB52N10T4
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ntb52n10ntb52n10/dntb52n10t4gtransistor gfs+4 | |
52N10GContextual Info: 52N10 Power MOSFET 52 Amps, 100 Volts N−Channel Enhancement−Mode D2PAK http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature |
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ntb52n10ntb52n10/d52n10g | |
52N10G
Abstract: NTB52N10T4G 52n10 AN569 NTB52N10 NTB52N10G NTB52N10T4
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ntb52n10ntb52n10/d52n10gntb52n10t4g+4 |