52A ZENER Search Results

Contextual Info: STW52NK25Z N-CHANNEL 250V - 0.033Ω - 52A TO-247 Zener-Protected SuperMESH MOSFET PRODUCT PREVIEW Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STW52NK25Z 250 V < 0.045 Ω 52 A 300 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.033 Ω

w52nk25z

Abstract: STW52NK25Z zener diode - C 10 ST st 0560
Contextual Info: STW52NK25Z N-CHANNEL 250V - 0.033Ω - 52A TO-247 Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STW52NK25Z 250 V < 0.045 Ω 52 A 300 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.033 Ω EXTREMELY HIGH dv/dt CAPABILITY

W52NK25Z

Contextual Info: STW52NK25Z N-CHANNEL 250V - 0.033Ω - 52A TO-247 Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STW52NK25Z 250 V < 0.045 Ω 52 A 300 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.033 Ω EXTREMELY HIGH dv/dt CAPABILITY

48v 2500w

Abstract: PD78F0511GA-8EU-A PD78F0511GA-8EU multi output switch mode transformer for stb FH02500
Contextual Info: 48V 2500W POWER SUPPLY SPECIFICATION REVISION HISTORY REV. EC NO. A 0 0 DESCRIPTION INITIAL RELEASE RESP.ENG DATE NORI MIURA 2/5/2010 Hot-Swap / Redundant Front End Power Supply 2500 WATTS @ 200-240VAC, 1200W@100-120VAC, 47-63 HZ OUTPUT: +48V @ 52A High Line , 25A (Low Line) , +12.5 V STB @ 2.0 A

50N03

Abstract: Diode BAY 32 50N035 50N035T Bay Linear 50N035S 52A32
Contextual Info: Bay Linear Linear Excellence 50N035 N-Channel Field Effect Transistor Description Features • The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications

39A zener diode

Abstract: SMAJ ZENER DIODE SMAJ4730A
Contextual Info: MCC SMAJ4728A THRU SMAJ4764A
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Maximum Ratings • • • • • 1 Watt Zener Diode 3.3 to 100
Volts Low Zener Impedance

39A zener diode

Abstract: 51a zener 46a sma zener diode 46a SMAJ4734A SMAJ4730A
Contextual Info: MCC TM Micro Commercial Components SMAJ4728A THRU SMAJ4764A
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Maximum Ratings • • • • • 1 Watt Zener Diode 3.3 to 100
Volts

33A zener diode

Abstract: zener diode 46a
Contextual Info: SMA4728A~SMA4764A Zener diode Features 1. For surface mounted applications 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value

zener diode 46a

Abstract: ZENER DIODE IN 47 1W 47A zener diode 54A SMA4754A
Contextual Info: SMA4728A THRU SMA4764A PB FREE PRODUCT 1W GLASS PASSIVATED JUNCTION SILICON ZENER DIODE FEATURES ● ● ● ● ● ● ● Glass passivated chip Low leakage Built-in strain relief Low inductance High peak reverse power dissipation Lead Pb -free component

Contextual Info: Zener Diodes Surface Mount 1W SML4728A - SMZ1330A RoHS VZ: 3.3 to 330 V PD: 1 W Features ϥ ϥ ϥ ϥ ϥ ϥ ϥ Glass passivated chip Low leakage Built-in strain relief Low inductance High peak reverse power dissipation Lead Pb -free For use in stabilizing and clipping

Contextual Info: Zener Diodes Surface Mount 1W SMA4728A - SZ1330A RoHS VZ: 3.3 to 330 V PD: 1 W Features ϥ ϥ ϥ ϥ ϥ ϥ ϥ Glass passivated chip Low leakage Built-in strain relief Low inductance High peak reverse power dissipation Lead Pb -free component For use in stabilizing and clipping

51a zener

Abstract: motorola ZENER 39a 10029a 1SMB5917A 6833a 2306C 1SMB5914A Motorola Zener 1SMB5913A 1SMB5915A
Contextual Info: M O T O R O L A SC D IODES/OPTO 2SE D b3fcj?255 Ü0Ô1325 3 • Order this data sheet by 1SMB5913A/D 1h I-5T MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1SMB5913A, B thru 1SMB5956A, B 1.5 W att P lastic Surface M o u n t Silico n Zener D iodes . a completely new line of 1.5 Watt Zener Diodes offering the following advantages:

Diode Marking ZM Motorola

Abstract: DIODE MOTOROLA 39A ZENER 18-2 5t
Contextual Info: M O T O R O L A SC DIODE S/O PTO 2SE D b3fcj?255 Ü0Ô1325 3 MOTOROLA • Order this data sheet by 1SMB5913A/D 1b I-5T SEMICONDUCTOR TECHNICAL DATA 1SMB5913A, B thru 1.5 W att Plastic Surface M ount Silicon Zener Diodes 1SMB5956A, B . . . a completely new line of 1.5 Watt Zener Diodes offering the following advantages:

Contextual Info: SML4728A – SMZ1330A 1.0W SURFACE MOUNT ZENER DIODE WON-TOP ELECTRONICS Pb Features        Low Profile 1.33mm Max. Case Height 1.0W Power Dissipation 3.3V – 330V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference

60N03

Abstract: 60N035 60N035S Bay Linear 60N035T
Contextual Info: Bay Linear Linear Excellence 60N035 N-Channel Field Effect Transistor Advance Information Description Features • The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications

b34 diode

Abstract: DIODE B34 B34 transistor DIODE ON SEMICONDUCTOR B34 NDB6030L B34 ZENER DIODE NDP6030L mjj transistor DIODE on B34
Contextual Info: Nationa I Semiconductor" June 1996 NDP6030L/ NDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancem ent m ode pow er field effect tran sisto rs are produced using N ational's pro p rie ta ry, h ig h cell density, DMOS

P6030L

Abstract: 52A zener
Contextual Info: g ^ IR Ç H I^ M IC D N D U C T Q R June1996 tm NDP6030L / NDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's

Contextual Info: Or der i ngQuant i t yandPacki ngFor m 煙煙煙煙煙煙煙煙煙 Pl easemakeyouror der s ‘mo : r et hanI nnerBoxQuant i t i es’and ‘amul t i pl eofeachPacki ngUni t ’ Package AX057 Zener s SI DACs AX06 Var i s t or s Zener s SI DACs AX078 Di odes

5562a

Abstract: marking 13z SMA4742A SMAZ1130A 51a zener 49a sma SMA4740A SMA4757 SMAZ1120A SMA475
Contextual Info: SMA47xxA SERIES Surface Mount Device .065 1.65 .049 (1.25) .110 (2.79) .100 (2.54) 0.177 (4.50) 0.157 (3.99) .012 (0.305) .006 (0.152) .090 (2.29) .078 (1.98) .060 (1.52) .030 (0.76) .008 (0.20) .004 (0.10) PRIMARY CHARACTERISTICS .208 (5.28) .194 (4.91)

Bussman MTH

Abstract: VI-FKE6-CQX 8576V Thermal Fuse 250v 15a
Contextual Info: Data Sheet Factorized Power Features • 250W, 500W, 750W, 115/230 Vac • • • • • • • • • • strappable single-phase 1.5, 3, 5 kW, 208 Vac three-phase 20-50 mS holdup UL, CSA, TÜV, VDE, BABT FCC/VDE Class B single-phase FCC/VDE Class A (three-phase)

12A 250v LITTLEFUSE

Abstract: mth-7 fuse Bussman mth Bussman fuse F4 250V 12A 250v 314 LITTLEFUSE VI-FKE6-CMX 750w VI-FKE6-CQX
Contextual Info: 12 1-800-735-6200 Off-Line Front Ends Single or Three Phase Strappable Features • 250W, 500W, 750W, 115/230Vac Strappable Single-Phase ■ 1.5, 3, 5 kW, 208Vac Three-Phase ■ 20-50 mS Holdup ■ UL, CSA, TÜV, VDE, BABT ■ FCC/VDE Class B single-phase

Transorb

Contextual Info: <u^- VICOR Off-Line Front Ends Single or Three Phase Strappable Features • 250W, 500W, 750W, 115/230 Vac Strappable Single-Phase ■ 1.5,3, 5 kW, 208 Vac Three-Phase ■ 20-50 mS Holdup ■ UL, CSA, TUV, VDE, BABT ■ FCC/VDE Class B single-phase ■ FCC/VDE Class A (three-phase)

E78996 rectifier module

Abstract: irfk4h350 IRFK4H351
Contextual Info: HE D I 4ÛS5452 OOQTGlc? 4 | IN TERN ATION AL Data Sheet No. PD-9.448B R EC TIFIER T-39-27 INTERNATIONAL RECTIFIER RECOGNIZED I « R HEXPAK POWER MODULE IRFK4H3SO IRFK4H351 File no E78996 Isolated Base Power HEXFET Parallel Assembly 400 Volt, 75 mil HEXPAK

Contextual Info: June 1996 NDP6030L / NDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very