523FL Search Results

2SK1011

Abstract: 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1101-01M 2SK1221-01 2SK1222-01 2SK1917-01M 2sk1211
Contextual Info: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M

2sk1507

Abstract: 2SK1011-01 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1007-01 2SK1009-01 2SK1013-01 2SK1101-01M
Contextual Info: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M

2SK1012

Abstract: 2SK1015 2SK1018-01 2SK1082 2SK1211 2SK1545 2sk1018 2SK1081-01 2SK1102 2SK1917-01M
Contextual Info: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M

MM5Z5265B

Abstract: MM5Z5231B MM5Z5246B MM5Z5255B diode zener marking 58 zener diode c5 zener diode E2 MM5Z5254B sod 523fl MM5Z5244B
Contextual Info: MM5Z5221B thru MM5Z5267B SURFACE MOUNT ZENER DIODES 200mW Surface Mount Zener Diodes - 2.4V-75V SOD-523FL .059 1.50 .067(1.70) .006(0.15) .0098(0.25) .0098(0.25) .014(0.35) .043(1.10) .051(1.30) 1 2 .035(0.90) .028(0.70) .012(0.70) .028(0.70) .003(0.16) .009(0.24)

VA126

Abstract: VA107 VA112 VA113 VA114 VA115 VA116 VA117 VA122 VA123
Contextual Info: 5238534 K N O X S E M I C O N D U C T OR INC_ 99D 00142 D DeT| 523fl534 QDDD145 3 | ~ Varactor Diodes VA107 to VA173 Type Number VA107 VA112 VA113 VA114 VA115 VA116 VA117 VA122 VA123 VA 124 VA 125 VA126 VA127 VA128 VA 129 VA130 VA132 VA133 VA134 VA135

Contextual Info: FU JI tìusELTUtìue 2SK2519-01 N-channel MOS-FET FAP-II Series 200V > Features - High Speed Switching - Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof 0 ,4 Q 10A 40W > Outline Drawing > Applications

Diode MARKING S37

Abstract: DIODE A131 ERC38
Contextual Info: E R C 3 8 ia : Outline Drawings « a a ia ^ ^ - K FAST RECOVERY DIODE A • 45^1 I Features • a tf - K tf # # ! ;» » .' ■ Super high speed switching. : Marking • f-'sX'sn&lfikv fit-3 - K; È Low VF in turn on Color COC6 : White n m z High voltage by mesa design.

Contextual Info: KS823C04 5A • £ t * Out l i ne Drawings SCHOTTKY BARRIER DIODE ■ 4# : F e a t u r e s Su rface m o u n t device. • t e V F Low V f • it' Connection Diagram S u per high speed s w itc h in g . •f u - i — ttwcjttftlBMte H igh reliability by p laner d es ig n .

MTIS

Abstract: A419 KS823C04 A418
Contextual Info: KS823C04 5A • £ t * Out l i ne Drawings SCHOTTKY BARRIER DIODE ■ 4# : F e a t u r e s Su rface m o u n t device. • t e V F Low V f • it' Connection Diagram S u per high speed s w itc h in g . •f u - i — ttwcjttftlBMte H igh reliability by p laner d es ig n .

ECG199

Abstract: ECG1356 ECG139A ECG Semiconductors Philips ECG ECG177 TR-11 TR-12
Contextual Info: PHILIPS E C G INC 17E Q ECG • bbS312û □□□523fl *1 ECG1356 25 W Dual AF PO S e m ic o n d u c to rs A bso lu te M axim um Ratings Ta =25°C C haracteristic Supply Voltage Thermal Coefficient Sym bol Rating U n it ^cc max ±37 V 6j-c 2,2 °C /W Collector Current

17ki

Abstract: 4r3t160y-080 4R3TI60Y-080 VH800 GDDS271 2u 87 x diode 2U 73 diode
Contextual Info: 4R3TI60Y-080 gafEffl * - V - * H »J DIODE and TYRISTOR MODULE I Features • i i —is 3 ^ • Glass Passivation Chip Easy Connection • Kfeiiffi Insulated Type • d d i / t # L' • d v /d t iif i* ''^ ? t ' Large d i/d t Large d v /d t • f f l i i : Applications

CBC 184 transistor

Abstract: 489 generator protection system 227Y ADSL Modem circuit diagram ci 555 TTL 494 cbc 182 MD-5 "ESP" DATA Sheet IC 555
Contextual Info: DSP ÷ Preliminary Technical Data APPLICATIONS • Implements IPSec ESP Transforms Autonomously at OC-3 155 Mbps rates (3-DES, SHA-1) • Security co-processor for High-Speed Networking Products (Routers, Switches, Hubs, etc.) • Cryptographic Core for Firewalls, Hardware Encryptors, etc.

F3687

Abstract: fuji igbt ms5f3637
Contextual Info: X This Material C o p y r i g h t e d B y Its R e s p e c t i v e M a n u f a c t u r e r Ratings and characteristics of Fuji IGBT 1 MB H O 8 D — 1 2 0 1. Clitl ine Drawing 2. Equivalent circuit C:Collector G:Gate o C O M N F C T IO N D © _3- Absolute maximum ratings

1DI100MA-050

Abstract: 2d175m-120 6DI20MS-050 fuji darlington module 6di50m-120 1DI100MA 1DI100MA050 2DI50M-050 1DI100 M613
Contextual Info: H igh H f e Series Darlington Modules Ratings and Characteristics Type Single Darlington Modules 600V Dual Darlington Modules 600V Six Pack Darlington Modules 600V SIL Six Pack Darlington Modules 600V v CE0 sus IV) vCEX(sus) <V) •c (A) hFE (min) •c (A)