51V18165 Search Results

Contextual Info: O K I Semiconductor MSM5 1V18 1 65B/BSL_ E2G 0087-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION TheMSM51 V18165B/BSL is a 1,048,576-word x 16-bit dynamic RAMfabricated in Oki's silicon-gate CMOS technology. The M SM 51V18165B/BSL achieves high integration, high-speed operation, and

MSM51V18165A

Abstract: MSM51V18165
Contextual Info: O K I Semiconductor M SM 51V18165A_ 1,048,576-Ward x 16-Blt DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 51V18165A is a 1,048¿76-w ord x 16-bit dynam ic RAM fabricated in O KI’s CM OS silicon gate technology. The M SM 51V18165A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CM OS. The M SM 51V18165A is

MSM51V18165DSL

Contextual Info: E2G0133-17-61 O K I Semiconductor MSM5 1VI8 1 65 P/PSL 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESC R IPTIO N The 51V18165D/DSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki's silicon­ gate CMOS technology. TheMSM51 V18165D/DSL achieves high integration, high-speed operation,

51v18165

Abstract: 658J A8303 TC51V18165
Contextual Info: , IN TEG RATED TO SH IB A FO SH ibA M O S D IGITAL IN T EG R A TED T C 5 1 V 1 8 1 6 5 B J S / B F T S - 60 T C 5 1 V 1 8 1 6 5 B J S / B F T S - 70 CIRCUIT TECH N ICAL DATA . CIRCU IT SILICON GATE CMOS TENTATIVE DA TA 1,048,576 W O R D x 16 BIT EDO HYPER PAGE DYNAM IC RAM

Contextual Info: O K I Semiconductor MSM5 1VI8165 B/BSL_ E 2G 0 087 -17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 51V18165B/BSLis a 1,048,576-word x 16-bit dynamicRAM fabricated inOki'ssilicon-gate CMOS technology. The MSM51 V18165B/BSLachieves high integration, high-speed operation, and