51L2800 Search Results

51L2200

Abstract: IGCT ABB 5STP 5SDD igct abb 51L2800 high power igct abb
Contextual Info: VRSM = 2800 V IFAVM = 5150 A IFRMS = 8080 A IFSM = VF0 = 0.77 V rF = 0.082 mΩ Ω 65 kA Rectifier Diode 5SDD 51L2800 Doc. No. 5SYA1103-01 Sep. 01 • Patented free-floating silicon technology • Very low on-state losses • High average and surge current.

Contextual Info: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 2800 5380 8450 65x103 0.77 0.082 Rectifier Diode V A A A V mΩ 5SDD 51L2800 Doc. No. 5SYA1103-01 Feb. 05 • Patented free-floating silicon technology • Very low on-state losses • High average and surge current.

5SDD51L2200

Abstract: k 175 parameters
Contextual Info: Key Parameters V r sm s 2800 V ^ FAVM = 5150 A a 8080 A s 65000 A = 0.77 V ^FRMS ^FSM - Rectifier Diode 5SDD 51L2800 0.082 m ft Ooc. No. 5SYA 1103-01 Jan.95 Features • Patented free-floating silicon technology. • Very low on-state power losses. • High average and surge current

Contextual Info: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 2800 5380 8450 65x103 0.77 0.082 Rectifier Diode V A A A V 5SDD 51L2800 mW Doc. No. 5SYA1103-02 Apr. 13 • Patented free-floating silicon technology · Very low on-state losses · High average and surge current.