51A MARKING CODE Search Results

*f1010e

Abstract: 51a marking AN-994 IRF1010EZ IRF1010EZL IRF1010EZS
Contextual Info: PD - 94724A IRF1010EZ IRF1010EZS IRF1010EZL AUTOMOTIVE MOSFET HEXFET Power MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

auirf1010ez

Abstract: auf1010ezs 51a marking AUIRF1010EZS AN-994 AUIRF1010EZL MARKING 51A
Contextual Info: PD - 95962 AUTOMOTIVE GRADE AUIRF1010EZ AUIRF1010EZS AUIRF1010EZL Features O O O O O O O Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *

51A MARKING CODE

Abstract: gs 069 AN-994 IRL3402 IRL3402S
Contextual Info: PD - 91693A IRL3402S HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching D VDSS = 20V RDS on = 0.01Ω G Description ID = 85A† S These HEXFET Power MOSFETs were designed

AN-994

Abstract: IRL3402 IRL3402S
Contextual Info: PD - 91693A IRL3402S HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching D VDSS = 20V RDS on = 0.01Ω G Description ID = 85A† S These HEXFET Power MOSFETs were designed

IRFZ44 data

Abstract: AN-994 IRFZ44 IRFZ44L IRFZ44S
Contextual Info: PD - 9.893A IRFZ44S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ44S Low-profile through-hole (IRFZ44L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.028Ω G ID = 50A† S Description Third Generation HEXFETs from International Rectifier

Contextual Info: P D - 9 .1 6 9 7 A International I9R Rectifier IRL3402 PREUMINAR HEXFET Power MOSFET • • • • Advanced Process Technology Optimized for 4.5V -7.0V Gate Drive Ideal for CPU Core DC-DC Converter Fast Switching V dss - 20V ^DS on = 0.01 Q Id = Description

IRF530S

Abstract: IRFZ44VL IRFZ44VS IRL3103L
Contextual Info: PD - 94050A IRFZ44VS IRFZ44VL l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications HEXFET Power MOSFET D VDSS = 60V RDS on = 16.5mΩ

Contextual Info: International IOR Rectifier PD - 9.1693A IRL3402S PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Surface Mount Optimized for 4.5V -7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching V dss = 2 0 V ^ D S o n =

IRFZ44V

Abstract: IRF1010
Contextual Info: PD - 93957B IRFZ44V HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V RDS on = 16.5mΩ

51a marking

Abstract: IRFZ44V IRFZ44VS IRF530S IRFZ44VL IRL3103L
Contextual Info: PD - 94050A IRFZ44VS IRFZ44VL l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications HEXFET Power MOSFET D VDSS = 60V RDS on = 16.5mΩ

IRFZ44V DATASHEET equivalent

Abstract: IRFZ44V irf 146 IRFz44v equivalent IRF1010
Contextual Info: PD - 93957B IRFZ44V HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V RDS on = 16.5mΩ

IRFZ44

Abstract: IRFZ44R
Contextual Info: PD - 93956 IRFZ44R HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ44 for Linear/Audio Applications

Contextual Info: PD - 94823 IRFZ44RPbF Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ44 for Linear/Audio Applications l Lead-Free Description

45V7

Abstract: AN-994 IRL3402 IRL3402S
Contextual Info: PD - 9.1693 IRL3402S PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching D VDSS = 20V RDS on = 0.01Ω G ID = 85A† S Description These HEXFET Power MOSFETs were designed

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

Contextual Info: PD - 93956 IRFZ44R HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ44 for Linear/Audio Applications

IRF1010

Abstract: IRFZ44VPBF diode marking 17
Contextual Info: PD - 94826 IRFZ44VPbF Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free Description HEXFET Power MOSFET D VDSS = 60V RDS on = 16.5mΩ

51a marking

Abstract: IRFZ44V
Contextual Info: PD - 93957A IRFZ44V HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V RDS on = 16.5mW

51a marking

Abstract: IRFZ44VS
Contextual Info: PD - 94050 IRFZ44VS l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications HEXFET Power MOSFET D VDSS = 60V RDS on = 16.5mΩ

Contextual Info: PD - 9.1697 International IÖR Rectifier IRL3402 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching V dss = 20 V R ü S o n = 0 . 0 1 Í 2 Id = 8 5 A Description

51A5

Abstract: 51a-5 ak 957 51A MARKING CODE
Contextual Info: PD - 9.1693A International IQR Rectifier IRL3402S P R E LIM IN A R Y HEXFET Power MOSFET Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching V dss = 20 V R DS on = 0.010 lD= 85A

Contextual Info: P D -9.1693 International IÖR Rectifier IRL3402S PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching V dss = 20V R DS on = 0 .0 1 0 lD= 85A Description

Contextual Info: RCJ510N25 Nch 250V 51A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 65mW ID 51A PD 40W LPT(S) (SC-83) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

Contextual Info: PD - 9.1697A International IQR Rectifier IRL3402 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching V dss = 20 V RüS on = 0.01 £2 lD = 85A Description These HEXFET Power MOSFETs were designed