51C25 Search Results

Contextual Info: ¡ n t I» P ftE U R fl 11 " H ì1 51C256H HIGH PERFORMANCE RIPPLEMODE 256Kx 1 CHMOS DYNAMIC RAM 51C256H-10t 51C256H-12 51C256H-15 51C256H-20 100 120 150 200 Maximum Column Address Accsss Tims (ns 40 50 65 85 Ripplemode Cycle Tims (ns) 50 60 75 95 Maximum Access Tims (ns)

Contextual Info: in te i’ 51C256L LOW POWER 256K X 1 CHMOS DYNAMIC RAM 51C256L-15 51C256L-20 Maximum Access Time ns 150 200 Maximum CHMOS Standby Current (mA) 0.1 0.1 • Low Power Data Retention ■ TTL and HCT Compatible — Standby current, CHMOS — 100 ¡¡A (max.)

Contextual Info: P U E L M M A m in t e i C 1P O C Q L LOW POWER 64Kx4 CHMOS DYNAMIC RAM 51C259L-12 120 0.1 Maximum Access Time ns Maximum CHMOS Standby Current (mA) 51C259L-15 150 51C259L-20 200 0.1 0.1 • TTL And HC Compatible Low Power Data Retention - Standby current, CHMOS — 100 /iA

Contextual Info: in te i’ 51C256HL HIGH PERFORMANCE LOW POWER RIPPLEMODE 256K X 1 CHMOS DYNAMIC RAM 51C256HL-15 51C256HL-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHtyOS Standby Current (mA) 0.1 0.1 Ripplemode Operation

Contextual Info: in te T 51C256HL HIGH PERFORMANCE LOW POWER RIPPLEMODE 256K X 1 CHMOS DYNAMIC RAM 51C256HL-15 51C256HL-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHMOS Standby Current (mA) 0.1 0.1 Ripplemode Operation Low Power Data Retention

Contextual Info: P ^ E U iÄ M 8 Y ir r t e T 51C258Lt LOW POWER 64K x 4 CHMOS DYNAMIC RAM Maximum Access Time ns Maximum CHMOS Standby Currant (mA) 51C258L-12 120 0.1 • Low Power Data Retention - Standby current, CHMOS — 100 pA (max.) - Refresh period, RAS-Only — 32 ms

Contextual Info: I ra E U M IIN l lÎW IMl6l 51C259H HIGH PERFORMANCE STATIC COLUMN 64K x 4 CHMOS DYNAMIC RAM Maximum Access Time ns Maximum Column Address Access Time (ns) 51C259H-10t 51C259H-12 51C259H-15 51C259H-20 120 100 150 200 40 55 65 85 Fast “Usable Speed”

S7727

Abstract: 51C258H 51C258H-10 51C258H-12 51C258H-15 51C258H-20 28012* intel
Contextual Info: P M E Lm m ß M Y in t e i 51 C258Ht HIGH PERFORMANCE RIPPLEMODE 6 4 K x 4 CHMOS DYNAMIC RAM 51C258H-10 51C258H-12 51C25BH-15 51C258H-20 Maximum Access Time ns 100 120 150 200 Maximum Column Address Access Time (ns) 40 50 65 85 Ripplemode Cycle Time (ns)

c1615

Abstract: c1609 51C259HL 51C259HL-15 51C259HL-20 C1608 C1613 C1614 28003* intel
Contextual Info: in t e i' 51C259HL HIGH PERFORMANCE LOW POWER STATIC COLUMN 64K x 4 CHMOS DYNAMIC RAM 5 1 C 2 5 9 H L -1 5 5 1 C 2 5 9 H L -2 0 20 0 Maximum Access Time ns Maximum Column Address Access Time (ns) 150 70 90 Maximum CHMOS Standby Current (mA) 0.1 0.1 Static Column Mode Operation

c1609

Abstract: 198S 51C259L 51C259L-12 51C259L-15 51C259L-20 C1608 C1610
Contextual Info: P U E L M M h U Y in y 51C259L LOW POWER 6 4 K x 4 CHMOS DYNAMIC RAM 51C259L-12 51C259L-15 51C259L-20 120 0.1 150 200 0.1 Maximum Access Time ns Maximum CHMOS Standby Current (mA) 0.1 • TTL And HC Compatible Low Power Data Retention - standby current, CHMOS — 100

ge ds-38

Abstract: c1615 ftm 230 IHb si 51C259HL 51C259HL-15 51C259HL-20 C1608 C1609
Contextual Info: ll’M f-P M M Ä l i W ir r t e ! 51C259HL HIGH PERFORMANCE LOW POWER STATIC COLUMN 64K x 4 CHMOS DYNAMIC RAM 5 1 C 2 5 9 H L -1 5 5 1 C 2 5 9 H L -2 0 15 0 70 Maximum Access Time ns Maximum Column Address Access Time (ns) Maximum CHM OS Standby Current (mA)

51C258L

Abstract: 51C258L-12 51C258L-15 51C258L-20 28012* intel
Contextual Info: in t e i 51C258Lt LOW PO W ER 6 4 K x 4 C H M O S DYN A M IC RA M 51C258L-12 51C258L-15 51C258L-20 120 0.1 150 200 0.1 0.1 Maximum Access Time ns Maximum CHMOS Standby Current (mA) Low O perating Current — 50 m A (max.) Low Power Data Retention - sta n d b y current, C H M O S — 100 /iA

intel 2102 Static RAM

Abstract: 51C256HL 51C256HL-15 51C256HL-20 TCAM
Contextual Info: in te i' 51C256HL HIGH PERFORMANCE LOW POWER RIPPLEMODE 256K X 1 CHMOS DYNAMIC RAM 51C256HL-15 51C256HL-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHtyOS Standby Current (mA) 0.1 0.1 Ripplemode Operation • Low Power Data Retention

51C256L

Abstract: 51C256L-12 51C256L-15 51C256L-20 28003* intel
Contextual Info: [P iF S iiU B lO tM Ä ß W in te T 51C256L LOW POWER 256K x 1 CHMOS DYNAMIC RAM Maximum Access Time ns Maximum CHMOS Standby Current (mA) • Low Power Data Retention - Standby current, CHMOS — 1 0 0 /¿A (max.) - Refresh period, RAS-Only — 32ms (max.)

Contextual Info: PEELM M kUY 51C258LT LOW POWER 64Kx4 CHMOS DYNAMIC RAM ¡ n te T 51C258L-12 120 0.1 Maximum Access Time ns Maximum CHMOS Standby Current (mA) 51C258L-15 150 0.1 51C258L-20 200 0.1 • Low Operating Current — 50 mA (max.) ■ Low Power Data Retention - Standby current, CHMOS — 100 /iA

Contextual Info: int ! 51C256L LOW POWER 256K X 1 CHMOS DYNAMIC RAM 51C256L-15 51C25Ì6L-20 Maximum Access Time ns 150 200 Maximum CHMOS Standby Current (mA) 0.1 0.1 • Low Power Data Retention ■ TTL and HCT Compatible — Standby current, CHMOS — 100 jxA (max.) — Refresh period, RAS-Only — 32 ms (max)

c1615

Abstract: c1609 C1617 51C259H 51C259H-10 51C259H-12 51C259H-15 51C259H-20 C1608 CI610
Contextual Info: PREEJ in t é T 51C259H HIGH PERFORMANCE STATIC COLUMN 64K x 4 CHMOS DYNAMIC RAM Maximum Access Time ns Maximum Column Address Access Time (ns) 51C259H-10t 51C259H-12 51C259H-15 51C259H-20 200 120 150 100 65 85 40 55 Fast “ Usable Speed” Static Column Mode Operation

28003* intel

Abstract: 51C256L 51C256L-15 51C256L-20 2800-310
Contextual Info: in te i 51C256L LOW POWER 256K X 1 CHMOS DYNAMIC RAM 51C256L-15 51C256L-20 Maximum Access Time ns 150 200 Maximum CHMOS Standby Current (mA) 0.1 0.1 Low Power Data Retention • TTL and HCT Compatible — Standb y current, C HM O S — 100 /¿A (m ax.) — R efresh period, R AS-O nly — 32 m s (m ax)

c1609

Abstract: 51C259L 51C259L-12 51C259L-15 51C259L-20 C1608 C1610 28003* intel
Contextual Info: [p^iUSMlDjNlÄiiW i n 51C259L LOW POWER 64K x 4 CHMOS DYNAMIC RAM y 51C259L-12 51C259L-15 51C259L-20 M aximum Access T im e ns 120 150 200 M aximum CHM OS Standby Current (mA) 0.1 0.1 0.1 TTL And HC Compatible Low Power Data Retention - Standby current, CHMOS — 100 /*A

B1GP

Abstract: 51C256H 51C256H-10 51C256H-12 51C256H-15 51C256H-20 28003* intel tpC-170
Contextual Info: i n t ^ r P R E U M M Â Ifflf " f l 1 5 1 C 2 5 6 H HIGH PERFORMANCE RIPPLEMODE 256K x 1 CHMOS DYNAMIC RAM Maximum Accesa Time ns Maximum Column Address Access Time (ns) Ripplemode Cycle Time (ne) 51C256H-10f 51C256H-12 51C256H-15 51C256H-20 100 120

Contextual Info: in té T 51C256L LOW POWER 256K x 1 CHMOS DYNAMIC RAM 51C256L-12 Maximum Access Time ns Maximum CHMOS Standby Current (mA) 120 0.1 • Low Power Data Retention - Standby current, CHMOS — 100 nA (max.) - Refresh period, RAS-Only — 32 ms (max.) - Data Retention Current — 230 ¡¡A

258H

Abstract: 536x4
Contextual Info: P E E L M M à M irrtel 51C258Ht HIGH PERFORMANCE RIPPLEMODE 64K x 4 CHMOS DYNAMIC RAM Maximum Access Time ns Maximum Column Address Access Time (ns) Ripplemode Cycle Time (ns) 51C258H-10 51C258H-12 51C25BH-15 51C258H-20 100 120 150 200 40 50 65 85 50

c1615

Abstract: 51C259H 51C259H-15 51C259H-20 C1608 C1609 C1610 C1613 C1614 c1616
Contextual Info: in t e i 51C259H HIGH PERFORMANCE STATIC COLUMN 64K x 4 CHMOS DYNAMIC RAM 5 1 C 2 5 9 H -1 5 Maximum Access Time ns 5 1 C 2 5 9 H -2 0 150 Maximum Column Address Access Time (ns) 70 • Static Column Mode Operation - Continuous data rate over 12 MHz - Random access from address

20 led VU meter

Abstract: 51C256HL 51C256HL-15 51C256HL-20 28003* intel
Contextual Info: in te i’ 51C256HL HIGH PERFORMANCE LOW POWER RIPPLEMODE 256K X 1 CHMOS DYNAMIC RAM 51C256HL-15 51C256HL-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHMOS Standby Current (mA) 0.1 0.1 Ripplemode Operation Low Power Data Retention