518 MOSFET Search Results

DC518

Abstract: LTC3704 BE 66a DC-518
Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 518 SLIC POSITIVE INPUT TO NEGATIVE OUTPUT DC/DC CONVERTER LTC3704 DESCRIPTION Demonstration circuit 518 is a positive input to negative output SLIC Subscriber Line Interface Circuit converter featuring the LTC3704 switching controller. DC518 converts 4.5V to 15V input

Vishay Dale RN60D

Abstract: dale rn60c CECC40401 rlr05 CECC40101 Vishay Dale RN55D RLR20 cecc40101-806 RLR62 cecc40101-806 s
Contextual Info: MIL- R -10 5 0 9 MIL- P R F - 2 2 6 8 4 MIL- P R F - 3 9 0 17 MIL- P R F - 5 518 2 C C E C 4 0 10 1 - 8 0 6 w w w. v i s h a y. c o m Selector Guide military film leaded resistors r e s i s t i v e p r o d uc t s V I S HAY INTERTE C HNOLO G Y , IN C . Military Film Leaded Resistors

1RFD210

Abstract: IRFD210
Contextual Info: International [rag Rectifier PD-9.386G IRFD210 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic insertion End Stackable Fast Switching Ease of Paralleling Simple Drive Requirements V d ss = 2 0 0 V

*f6p02

Abstract: NTMS4700NR2
Contextual Info: ON Semiconductor Selector Guide − Power MOSFET Products MOSFET − Surface Mount RDS on Max (W) @ VGS = VDSS (V) 10 V 4.5 V/5.0 V* 2.5 V/2.7 V* 1.8 V QT Typ (nC) @ VGS = 4.5 V (5.0 V)/10 V* ID (A) PD (W) 12 6.5 2 NTMD6N02 Max Rating Config. Page No. D 758

KMA5D2N30XA

Contextual Info: SEMICONDUCTOR KMA5D2N30XA TECHNICAL DATA N-CH Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for cellular phone and netebook

TC 2608

Abstract: JESD97 STRH100N6FSY1
Contextual Info: STRH100N6FSY1 STRH100N6FSY3 N-channel 60V - 0.011Ω - TO-254AA rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH100N6FSY1 60 V STRH100N6FSY3 60 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

p12p10

Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
Contextual Info: - POWER MOSFETs 5 P-CHANNEL POWER MOSFETs PAGE 2N6804 Avalanche Energy Rated P-Channel Power M OSFET. 5-3 2N6849 Avalanche Energy Rated P-Channel Power MOSFET. 5-8 2N6851

1128 marking

Abstract: JESD97
Contextual Info: STRH100N6FSY1 STRH100N6FSY3 N-channel 60V - 0.011Ω - TO-254AA rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH100N6FSY1 60 V STRH100N6FSY3 60 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

mosfet 0018

Abstract: SiE802DF
Contextual Info: SPICE Device Model SiE802DF Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: SÌ6965DQ Vishay Siliconix P-Channel 2.5-V G-S Battery Switch New Product Ros{on) (f ì ) I d (AJ 0.035 @ VGs = -4 -5 V ±5 .0 0.060 @ VGS = -2 .5 V ±3.9 vos m -2 0 TSSOP-8 Top View P-Channel MOSFET P-Channel MOSFET • m ■ ■ ■ ■ ■ ■ 1 SYMBOL

MOSFET 800V 10A

Abstract: ssf10n80a Tc-25-t
Contextual Info: SSF10N80A Advanced Power MOSFET FEATURES BVdss = 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ VDS= 800V

Contextual Info: IRF710A Advanced Power MOSFET FEATURES BV Ds s = 4 0 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 jJA Max. @ VDS= 400V Low RDS(ON) : 2.815 £2 (Typ.)

TO-247 Package

Contextual Info: APT5020BLC 500V 26A 0.200 W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,

Contextual Info: IRLR020/024 IRLU020/024 N-CHANNEL LOGIC LEVEL MOSFET FEATURES • • • • • • • • Lower Rds ON Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

IRF540N

Abstract: MOSFET IRF540n huf76639p3 HRF3205 equivalent HUF75623P3 ITF87056DQT huf75339 RF1K49093 HRF3205 HRFZ44N
Contextual Info: Power MOSFET SPICE and Thermal Models TM Features • • • • • • • Sub Circuit Approach Full Operating Temperature Range Accurate Gate Charge Modeling BVDSS Modeling at Low and High Currents Package Inductances Gate Source Resistance Third Quadrant Diode Operation

LMC7301

Abstract: LM338 model SPICE Step-Down Voltage Regulator smd 5pin ic VARIABLE POWER SUPPLY. 0 - 30V, LM723 LM338 spice 6v battery charger lm317 automatic LM338 TO-3 spice model diode smd marking BUF GP 750 LM4560 LM358 vs LM741
Contextual Info: Linear/Mixed-Signal Designer’s Guide February 1999  Welcome to National Semiconductor’s February 1999 Edition of the Linear/Mixed-Signal Designer’s Guide! Included in this guide are: • • • • • Alphanumeric index Product selection trees Product selection guides

74142

Abstract: SSF10N80A 115U ssv 620 00401ST
Contextual Info: SSF10N80A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BVdss = 800 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 |iA Max. @ V ^ = 800V

ld18a

Abstract: IRLIZ44G
Contextual Info: PD-9.849 International SS Rectifier IRLIZ44G HEXFET Power MOSFET • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Logic-Level Gate Drive • RDS on Specified at Vgs=4V & 5V • Fast Switching • Ease of Paralleling

Contextual Info: ¡n HARRIS I j U S E M I C O N D U C T O R FRK9150D, FRK9150R, FFÌf 9150H 26A, -100V, 0.125 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 26A, -100V, RDS(on = 0.125£i TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts

VARIABLE POWER SUPPLY. 0 - 30V, LM723

Abstract: LM741 audio amplifiers IC LM741 timer circuit diagram lm35 sensor interfacing with adc0808 diagram LM338 TO-3 spice model LM741 AND LM386 Audio Amplifier lm1485 LM1084 spice LF351 op-amp audio equalizer smd code marking 162 sot23-5
Contextual Info: Welcome to National Semiconductor’s Summer 2000 Edition of the Linear/Mixed-Signal Designer’s Guide! Included in this guide are: • • • • • Alphanumeric index Product selection trees Product selection guides Package descriptions CD-ROM with complete datasheets, a pdf version of this guide, and other valuable information

din IEC 68

Abstract: 150a gto GTO 100A IXYS 40N60A D-68623 DWEP 17-12 DWEP DWlP 2580B L 7CG
Contextual Info: Contents Page Symbols and Definitions Nomenclature General Information Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types S-Series, SCSOA Capability, Fast Types

SSP2N90

Abstract: 123456789
Contextual Info: N-CHANNEL POWER MOSFETS SSP2N90 FEATURES • L o w e r R ds ON • Improved inductive ruggedness • Fast switching times • Rugged polysiiicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

Contextual Info: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN917 Dual-Channel LITTLE FOOT 6-Pin SC-70 MOSFET Copper Leadframe Version Recommended Pad Pattern and Thermal Performance 175 °C Rated Part INTRODUCTION The new dual 6-pin SC-70 package with a copper leadframe

Contextual Info: SPICE Device Model Si4776DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C