5169MO Search Results

Contextual Info: Ordering number: EN 3097 2SA1710/2SC4490 PNP/NPN Epitaxial Planar Silicon Transistors SAtVO High-Defmition CRT Display Video Output Applications '• iV V y ■' 1 I • Features ■High breakdown voltage V ceo — 300V ■ Excellent high frequency characteristic

2SC4450

Contextual Info: Ordering number:EN3101 NPN Triple Diffused Planar Silicon Transistor 2SC4450 1500V/5mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage. · Small Cob. · Wide ASO. · High reliability Adoption of HVP process .

2SA1710

Abstract: 2SC4490 ITR04358 ITR04359 ITR04360 ITR04361 ITR04362
Contextual Info: Ordering number:ENN3097 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1710/2SC4490 High-Definition CRT Display Video Output Applications Features Package Dimensions • High breakdown voltage VCEO≥300V . · Excellent high frequency characteristic. · Adoption of MBIT process.

2SC4450

Abstract: ITR06957 ITR06958 ITR06959 ITR06960 ITR06961
Contextual Info: Ordering number:ENN3101 NPN Triple Diffused Planar Silicon Transistor 2SC4450 1500V/5mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage. · Small Cob. · Wide ASO. · High reliability Adoption of HVP process .

Contextual Info: Ordering number:ENN3101 NPN Triple Diffused Planar Silicon Transistor 2SC4450 1500V/5mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage. · Small Cob. · Wide ASO. · High reliability Adoption of HVP process .

DCA015

Abstract: FC801
Contextual Info: Ordering number :EN3107A FC801 Silicon Epitaxal Planar Diode Composite Diode for High-Speed Switching Applications Features Package Dimensions • Composite type with 4 diodes contained in the CP package currently in use, improving the mounting efficiency greatly.

2SA1709

Contextual Info: Ordering number : EN3096A 2SA1709/2SC4489 Bipolar Transistor http://onsemi.com - 100V, (-)2A, Low VCE(sat), (PNP)NPN Single NMP Features • • Adoption of FBET, MBIT processes Fast switching speed • High breakdown voltage, large current capacity ( )2SA1709

ICP30

Abstract: 2SA1709
Contextual Info: 2SA1709 / 2SC4489 Ordering number : EN3096A SANYO Semiconductors DATA SHEET 2SA1709/2SC4489 PNP/NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features • • Adoption of FBET, MBIT processes Fast switching speed • High breakdown voltage, large current capacity

2SC3142

Abstract: FC120 marking 7T transistor
Contextual Info: Ordering number:EN3062A FC120 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency General-Purpose Amp, Differential Amp Applications Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.

2SC3142

Abstract: FC120 marking 7T transistor
Contextual Info: Ordering number:EN3062A FC120 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency General-Purpose Amp, Differential Amp Applications Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.

Contextual Info: O rdering num ber: EN3101 _ 2SC4450 NPN Triple Diffused Planar Silicon Transistor 1500V/5mA High-Voltage Amp, High-Voltage Switching Applications F e a tu re s • High breakdown voltage • Small Cob • Wide ASO • High reliability Adoption of II VP process

30621

Contextual Info: O rd e rin g n u m b e r: EN3Q62A FC 120 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency General-Purpose Amp, Differential Amp Applications F e a tu re s • Composite type with 2 transistors contained in the CP package currently in use, improving the

Contextual Info: Ordering number:EN2953 DD20R Diffused Junction Type Silicon Diode Damper Diode for Ultrahigh-Definition Display Applications Features Package Dimensions • High breakdown voltage VRRM : 1500V . · High reliability. · One-point fixing type plastic molded package

2sc4490

Abstract: 2SA1710 ITR04358 ITR04359 ITR04360 ITR04361 ITR04362
Contextual Info: Ordering number:ENN3097 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1710/2SC4490 High-Definition CRT Display Video Output Applications Features Package Dimensions • High breakdown voltage VCEO≥300V . · Excellent high frequency characteristic. · Adoption of MBIT process.

JC448

Abstract: 2SC1489 AFiB 2SA1709 A170 C448 C448S SA17
Contextual Info: Ordering num ber:EN 3096 2SA1709/2SC4489 No.3096 SAXYO PN P/N PN E pitaxial P lanar Silicon T ransistors High-Voltage Switching Applications F e a tu r e s •Adoption of FBET, MBIT processes • H igh breakdow n voltage, large cu rre n t capacity • F a st sw itching speed

2SA1710

Contextual Info: Ordering number:EN3097 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1710/2SC4490 High-Definition CRT Display Video Output Applications Features Package Dimensions • High breakdown voltage VCEO≥300V . · Excellent high frequency characteristic. · Adoption of MBIT process.

EN3101

Abstract: 2SC4450
Contextual Info: Ordering number : EN3101 2SC4450 No.3101 NPN Triple Diffused Planar Silicon Transistor H igh-Voltage Sw itching Applications F e a tu re s •High breakdown voltage • Small c0b • Wide ASO • High reliability Adoption of IIVP process A bsolute M axim um R atings at Ta = 25°C

2SA1709

Abstract: 2SC4489 ITR04340 ITR04341 ITR04342
Contextual Info: Ordering number:ENN3096 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1709/2SC4489 High-Voltage Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · High breakdown voltage, large current capacity. · Fast switching speed.

31Q7A

Abstract: sanyo AG
Contextual Info: O rd e rin g n u m b e r : EN 31Q7A ; _ F C 8 0 1 No.3107A Silicon Epitaxial Planar Type Composite Diode for H igh-Speed Sw itching Applications Features • Composite type with 4 diodes contained in the CP package currently in use, improving the mounting

2SA1709

Contextual Info: Ordering number:ENN3096 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1709/2SC4489 High-Voltage Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · High breakdown voltage, large current capacity. · Fast switching speed.

2SA1709

Contextual Info: Ordering number:EN3096 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1709/2SC4489 High-Voltage Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · High breakdown voltage, large current capacity. · Fast switching speed.

Contextual Info: Ordering number:EN 3 0 9 6 _2SA1709/2SC4489 PNP/NPN Epitaxial P lanar Silicon Transistors High-Voltage Switching Applications J F e a tu re s •Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity ■F ast switching speed

1211A

Abstract: 2953 DD20R 5169MO
Contextual Info: Ordering num ber :EN2953 SAmro i i No^953 I D D 2 OR Diffused Junction Type Silicon Diode Damper Diode for Very H igh-D efinition Display Applications F e a tu re s - High breakdown voltage Vrrm : “ 1500V - High reliability •One-point fixing type plastic molded package facilitating easy mounting and heat dissipation

2SA1710

Abstract: 2SC4490 ITR04358 ITR04359 ITR04360 ITR04361 ITR04362
Contextual Info: Ordering number:ENN3097 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1710/2SC4490 High-Definition CRT Display Video Output Applications Features Package Dimensions • High breakdown voltage VCEO≥300V . · Excellent high frequency characteristic. · Adoption of MBIT process.