5141Q Search Results

M514100

Abstract: E130155
Contextual Info: O K I semiconductor MSM5141OOA/AL_ 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE G E N E R A L D ESC R IP T IO N The M SM 514100A /A L is a n e w g e n e ra tio n d ynam ic RAM o rg an ized as 4,19 4,30 4-w o rd x 1-bit. T h e te c h n o lo g y used to fa b r ic a te th e M SM 5 1 4 1 0 0 A /A L is O K I's CM O S silic o n g a te p ro cess

Contextual Info: O K I semiconductor MSM514101A/AL 4,194,304-Word x 1-Bit DYNAMIC RAM: NIBBLE MODE TYPE GENERAL DESCRIPTION The M S M 514101A /A L is a new generation dynamic RAM organized as 4,194,304-w ord x 1 bit. The technology used to fabricate the M SM 514101A /A L is OKI's C M O S silicon gate

SJ 8227 L

Abstract: SJ 8227
Contextual Info: MOTOROLA SC MEMORY/ASIC M bE. b 3 t . 7 2 S l QGÔGQOS 1 f10T3 D MOTOROLA O rd er this data sheet ’- ¿ i é “ ¿ L S - } $ by MCM94000/D a SEMICONDUCTOR - W*HBH#59K?»gg!eg®! aSÉSSÈStii! TECHNICAL DATA MCM94000 MCM9L4000 Advance Information

Contextual Info: O K I semiconductor M S M 5 1 4 1 0 1 A /A L 4,194,304-Word x 1-Bit DYNAMIC RAM: NIBBLE MODE TYPE GENERAL DESCRIPTION The MSM514101A/AL is a new generation dynamic RAM organized as 4,194,304-word x 1bit. The technology used to fabricate the MSM514101A/AL is OKI's CMOS silicon gate