51410 Search Results

Contextual Info: •HYUNDAI H Y SEMICONDUCTOR 514100A S e rie s 4M x 1-bit CMOS DRAM DESCRIPTION The 514100A is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The 514100A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Siemens MTD 95 A 08 N

Contextual Info: SIEM ENS 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 514100BJ/BT -50/-60/-70 HYB 514100BJL/BTL -50/-60/-70 Advanced Inform ation • 4 194 304 w ords by 1-bit organization • 0 to 70 “C operating tem perature • Fast access time RAS access time:

Contextual Info: H M 5 1 4 1 O O C /C L S e r i e s Preliminary 4,194,304-word x 1-bit Dynamic Random Access Memory HITACHI T he H ita c h i H M 514100C is a CM OS dynam ic R A M o rg a n iz e d 4 ,1 9 4 ,3 0 4 w o rds x 1 b its . HM 514100C has realized higher density, higher

8m122802

Abstract: 2N3904 2N3906 SM02B-BHSS-1-TB T-51410D104-FW-P-AC
Contextual Info: 8m122802 Specifications and Applications Information 03/12/08 8m Class DC to AC Inverter Preliminary 8m Class The ERG 8m122802 8m Class low profile dc to ac inverter is specifically designed to power the Optrex T-51410D104-FW-P-AC LCD display module to a moderate brightness level from a

B56C

Contextual Info: bl E í • 44^203 HB56C49 Series — DDS3bôô 0 0 e} ■ H I T S - H I T A C H I / LOGIC/ARRAYS/MEM 4,194,304-Word x 9-Bit High Density Dynamic RAM Module T he H B 56C 49 is a 4 M x 9 dynam ic RAM m odule, m ounted n in e 4 -M b it DRAM H M 514102A S sealed in SOJ package. An

M514100D

Contextual Info: 514100D Series 4,194,304-word x 1-bit Dynamic RAM HITACHI ADE-203-680 Z Preliminary Rev. 0.0 Dec. 3, 1996 Description The Hitachi HM 514100D is a CMOS dynamic RAM organized 4,194,304 word x 1-bit. 514100D has realized higher density, higher performance and various functions by employing 0.8 (im CMOS process

transistor a7g

Abstract: a105g MSM temperature spec til 31a MSM514101-10 MSM514101-70 MSM514101-80
Contextual Info: SÔE T> • h?2424D DDIHT?! Tb3 « O K I J 0 « I SEMICONDUCTOR GROUP O K I s e m ic o n d u c to r - r - H t - z s - i s M S M 514101 4,194,304-Word x 1-Bit DYNAMIC RAM: NIBBLE MODE TYPE GENERAL DESCRIPTION The 514101 is a new generation dynamic RAM organized as 4,194,304-word x1 -bit.

Contextual Info: SIEMENS 4M X 1-Bit Dynamic RAM HYB 514100-80/-10 Advanced Information • 4 194 304 words by 1-bit organization • Fast access and cycle time 80 ns access time 160 ns cycle time HYB 514100-80 100 ns access time 190 ns cycle time (HYB 514100-10) • Fast page mode cycle time

Contextual Info: SIEMENS 4Mx1-Bit Dynamic RAM Low Power 4Mx1-Bit Dynamic RAM HYB 514100BJ -60/-70/-80 HYB 514100BJL -60/-70/-80 Advanced Inform ation • • • • • • • • • • • • • 4 194 304 w ords by 1-bit organization 0 to 70 "C operating tem perature

Contextual Info: HB56 A49 A/AT/B-8/10/12 9-Bit DRAM I PIN OUT 4,194,304-Word x 9 Bit High Density Dynamic RAM Module • DESCRIPTION T he H B 56A 49 is a 4M x 9 dynam ic RAM m odule, mounted nine 4M bit DR AM HM 514100JP sealed in SOJ package. An outline of the H B 56A 49 is 30-pin single in-line package having Lead types

HM514100

Contextual Info: HM 514100JP/ZP-7-4,194,304-W ord x 1-Bit Dynam ic Random A ccess M em ory • DESCR IPTIO N HM514400JP Series The Hitachi 514100 is a CMOS dynamic RAM organized 4,194,304 word x 1-bit. 514100 has realized higher density, higher performance and various func­

Contextual Info: SIEMENS Summary of Types Summary of Types Type | Ordering | Code Package Description DRAM Page i Memory Components HYB 514100BJ-50 067100-0971 P-SOJ-26/20-5 4 M X 1,5 V, 50 ns 47 514100BJ-60 067100-0759 P-SOJ-26/20-5 4 M x 1, 5 V, 60 ns 47 HYB 514100BJ-70

514100J-80

Abstract: 514100j-10
Contextual Info: El SIEMENS f l5 3 5 b 0 5 0G2G140 1 E21SIEG S IE M E N S A K T I E N 6 E S E L L S C H A F 4M X 1-Bit Dynamic RAM 4 7 E 3> HYB 514100-80/-10 Advanced Information • • • • • • • • • • • 4 194 3 04 words by 1-bit organization Fast access and cycle time

CSR 8811

Abstract: JRC 2611 TGS 2611 2611 jrc jrc 0051 hitachi TNC
Contextual Info: 514101 Series 4,194,304-Word x 1-Bit Dynamic Random Access Memory • DESCRIPTION H M 514101JP Series The Hitachi 514101 is a CMOS dynamic RAM organized 4,194,304 word x 1-bit. 514101 has realized higher density, higher performance and various func­

Contextual Info: O K I semiconductor M SM 514101 4,194,304-Word x 1-Bit DYNAMIC RAM: NIBBLE MODE TYPE GENERAL DESCRIPTION The 514101 is a new generation dynamic RAM organized as 4,194,304-word x1 -bit. The technology used to fabricate the 514101 is OKI’s CMOS silicon gate process tech­

M514100

Abstract: E130155
Contextual Info: O K I semiconductor MSM5141OOA/AL_ 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE G E N E R A L D ESC R IP T IO N The M SM 514100A /A L is a n e w g e n e ra tio n d ynam ic RAM o rg an ized as 4,19 4,30 4-w o rd x 1-bit. T h e te c h n o lo g y used to fa b r ic a te th e M SM 5 1 4 1 0 0 A /A L is O K I's CM O S silic o n g a te p ro cess

Contextual Info: SIEMENS 4 M X 1-Bit Dynamic RAM Low Power 4 M x 1-Bit Dynamic RAM HYB 5141OOBJ/BT-60/-70/-80 HYB 514100BJL/BTL-60/-70/-80 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time:

5117400

Abstract: sem 2500 7212 tube
Contextual Info: Packing Information SIEM ENS DRAMS in Tape & Reel Package Type Device Type Devices Per Reel Tape Width P-SOJ-26/20-1 ' HYB 5 1 1000BJ HYB 514256BJ 1500 24 mm P-SO J-26/20-5?l HYB 514100BJ HYB 514400BJ 1500 24 mm P-SOJ-28-2 HYB 514800BJ 1000 24 mm P-SOJ-40-1

cp-20da

Abstract: HM514101AS-7 HM514101AS7
Contextual Info: 514101A S e r ie s - Preliminary 4,194,304-Word x 1-Bit Dynamic Random A c ce s s Memory • DESCRIPTION 514101AJ Series The Hitachi H M 514101A is a C M O S dynamic RAM organized as 4,194,304-word x 1-bit. H M 514101A has realized higher density, higher performance and various

Contextual Info: HB56D836 Series 8 ,3 8 8 ,6 0 8 -w o r d x 3 6 -b lt H ig h D e n s ity D y n a m ic R A M M o d u le The HB56D 836 is a 8 M x 36 dynam ic RAM module, mounted 16 pieces of 16-Mbit DRAM HM 5117400AS sealed in SOJ package and 8 pieces of 4-M bit DRAM (H M 514100B S/C S)

flp4

Abstract: HM514101
Contextual Info: 514101 S e r ie s -4,194,304-Word x 1-Bit Dynamic Random Access Memory • DESCRIPTION HM 514101JP Series The Hitachi 514101 is a C M O S dynamic R A M organized 4,194,304 word x 1-bit. 514101 has realized higher density, higher performance and various func­

hp lcd inverter

Abstract: BHR-03VS-1 DF9B-41P-1V T-51410D104-FW-P-AE hp lcd inverter pin diagram topcon hp backlight inverter HP 2000 backlight
Contextual Info: LCD Module Technical Specification O PTREX First Edition Dec 17, 2001 Final Revision * T-51410D104-FW-P-AE Checked by Quality Assurance Div. *The part number and specification are still tentative. Checked by (Design Engineering Div.) Prepared by (Production Div.)

Contextual Info: O K I Semiconductor 514100C/CL 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 514100C /C L is a 4 , 1 9 4 ,3 0 4 -w o r d * 1-bit dynam ic RAM fabricated in OKI's C M O S silicon gate technology. The M SM 514100C /C L achieves high integration, high-speed operation, and lowpow er consum ption due to quadruple polysilicon single m etal CM O S. The M SM 514100C /C L is

Contextual Info: O K I semiconductor MSC2340-XXYS9/KS9_ 4,194,304 Word x 9 Bit DYNAMIC RAM MODULE: FAST PAGE MODE TYPE G EN ERAL DESCRIPTION The Oki M SC2340-XXYS9/KS9 is a fully decoded, 4,194,304 word by 9 bit C M O S dynamic random access memory composed of nine 4Mb DRAM s in S O J M SM 514100JS . The mounting of nine S O Js