512KBIT Search Results

23A512-I

Abstract: 23A512 23LC512-I 23LC512
Contextual Info: 23A512/23LC512 512Kbit SPI Serial SRAM with SDI and SQI Interface Device Selection Table Part Number VCC Range Dual I/O SDI Quad I/O (SQI) Max. Clock Frequency 23A512 1.7-2.2V Yes Yes 20 MHz SN, ST, P 23LC512 2.5-5.5V Yes Yes 20 MHz SN, ST, P Packages Features:

Contextual Info: 8 Bit PLCC EPROMs 512Kbit and smaller UniROM User's Manual 84

A25L05PT

Abstract: A25L05PU 25L05P A25L05P A25L10P A25L20P 25L10P
Contextual Info: A25L20P/A25L10P/A25L05P Series 2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface Document Title 2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface Revision History History Issue Date

LH28F800BVE-BTL90

Abstract: LHF80V11
Contextual Info: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F800BVE-BTL90 Flash Memory 8M 1M x 8 / 512Kbit × 16 (Model No.: LHF80V11) Issue Date: September 20, 1999 sharp LHF80V11 ●Handle this document carefully for it contains material protected by international copyright law.

LH28F800BVHE-BV85

Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F800BVHE-BV85 Flash Memory 8M 1M x 8 / 512Kbit × 16 (Model No.: LHF80V37) Spec No.: EL109096A Issue Date: September 27, 1999 sharp LHF80V37 ●Handle this document carefully for it contains material protected by international copyright law.

FM24C512

Abstract: FM24C512-G FM24V05
Contextual Info: FM24C512 512Kb FRAM Serial Memory Features 512Kbit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

6755w

Contextual Info: Ju ly 1998 s e m ic o n d u c t o r FM27LV512L 524,288-Bit 64Kx8 Low Voltage, Low Power EPROM General Description • Programming Voltage +12.75V ■ Typical programming time 50|is The FM27LV512 is a low voltage, low-power 512Kbit, 3.3V-only one-time-programmable (OTP) read-only memory (EPROM), or­

M27G512

Abstract: 27G512
Contextual Info: January 1998 S E M IC O N D U C T O R FM27C512-L 524,288-Bit 64K x 8 Low Power Fast EPROM General Description The FM27C512 is a low-power 512Kbit, 5V-only one-timeprogrammable (OTP) read-only memory (EPROM), orga­ nized into 64K words with 8 bits per word. Any byte can be

Contextual Info: seeQ 48F512 5 1 2 K F L A S H E E P R O M PRELIMINARY DATA SHEET M y 1989 Description Features • 64K Byte Flash Erasable Non-Volatile M em ory ■ Lo w Power CMOS P rocess ■ E le ctrica l B yte W rite a n d C hip/Sector Erase The 48F512is a 512Kbit CMOS FLASH EEPROM organ¡zed as 6 4 K x8 b its. SEEQ's48F512 brings together the

27C512N

Contextual Info: I R C H I L D April 1998 S E M I C O N D U C T O R TM 524,288-Bit 64K FM27C512L 524,288-Bit (64Kx8 Low Power Fast EPROM • Programming V o lta g e +12.75V General Description ■ Typical programm ing time 50|is The FM27C512 is a low -pow er 512Kbit, 5V-only one-tim e-program m able (OTP) read-only m em ory (EPROM), organized into

Contextual Info: MOSEL VITELIC V54C316162V 200/183/166 MHz 3.3 VOLT ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16 V54C316162V -5 -55 -6 Unit 200 183 166 MHz Latency 3 3 3 clocks Cycle Time tCK 5 5.5 6 ns Access Time (tAC) 5 5.3 5.5 ns Clock Frequency (tCK)

Contextual Info: IS25CD512/010 & IS25LD020 512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface FEATURES • Single Power Supply Operation - Low voltage range: 2.70 V – 3.60 V 512Kbit / 1Mbit 2.30 V – 3.60 V (2Mbit)

CAT71C256L-85

Abstract: cat22c12 CAT27HC256 cerdip z PACKAGE lb2f 64KX16 CAT27C210 CAT28F010 CAT28F512 4Q91
Contextual Info: CATALYST SEMICONDUCTOR 1 Device fl CAT28F010 Temp Range » • OOOIB'ÌS Access Time ns Size (Organization) CS T Pkg Types # Pins (Max/Standby) 1 ■ T-90-30 Availability C 1MBit 120/150/200 30mA/100nA 32 P,N 4Q91 CAT28F512 C 512KBit <64Kx8) 200/250 50mA/500pA

Contextual Info: M25P32 32 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 32Mbit of Flash Memory Page Program up to 256 Bytes in 1.4ms (typical) Sector Erase (512Kbit) Bulk Erase (32Mbit) 2.7 to 3.6V Single Supply Voltage

ML2250

Abstract: ML22Q54
Contextual Info: 1 ML2250 Series PRODUCT INTRODUCTION SHEET January 22, 2004 VOICE SYNTHESIS LSIs WITH 2 CHANNEL MIXING Description ML2250 series are voice synthesizer LSIs with 512kbit to 6MBit internal ROM plus 2-channel mixing playback function. The volume of each channel can be controlled independently. A “phrase control table” in ROM allows preprogramming of individual phrases to form a sentence

V54C316162V

Contextual Info: MOSEL VITELIC V54C316162V V54C316162V 200/183/166/143 MHz 3.3 VOLT, 4K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16 -5 -55 -6 -7 Unit 200 183 166 143 MHz Latency 3 3 3 3 clocks Cycle Time tCK 5 5.5 6 7 ns Access Time (tAC ) 5 5.3 5.5

27C512N

Contextual Info: PRELIMINARY S E M I C O N D U C T O R TM FM27C512L 524,288-Bit 64Kx8 Low Power Fast EPROM General Description FM27C512L P A .P C H .L D • Programming Voltage +12.75V ■ Typical programming time 50ns The FM27C512 is a low-power 512Kbit, 5V-only one-time-programmable (OTP) read-only memory (EPROM), organized into

vdfpn8

Abstract: M25P16 VDFPN8 8x6mm MLP8 package spi flash m25pxx VDFPN8 package MLP8 M25PXX VDFPN M25P application note
Contextual Info: M25PXX 512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface DATA BRIEF FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 512Kbit to 32Mbit of Flash Memory Page Program up to 256 Bytes in 1.4ms (typical)

Contextual Info: O K I semiconductor MSM6375 / M SM 6374 1 MSM6373 I MSM6372 1M bit/512Kbit/256K bit M A SK ROM SPEECH SYNTHESIZER G EN ERA L DESCRIPTION The MSM6375 series is an ADPCM speech synthesis LSI utilizing a CMOS speech processor circuit in conjunction w ith a built-in M ASK ROM fo r speech data storage. Since it has a built-in 12-bit DA

ice27c512

Contextual Info: ICE27C512 512kbit 64KX8 OTP EPROM Description The ICE27C512 is a low-power, high-performance 512k(524288) bit one-time programmable read only memory (OTP EPROM) organized as 64K by 8 bits. It is single 5V power supply in normal read mode operation. Any byte can be accessed in less than 70ns. The ICE27C512 typically consumes 10mA , standby

Contextual Info: July 1998 S E M IC O N D U C TD R tm FM27LV512L 524,288-Bit 64Kx8 Low Voltage, Low Power EPROM General Description • Program ming V oltage + 1 2.7 5V ■ Typical programm ing tim e 50ns T h e F M 2 7 L V 5 1 2 is a low voltage, low-power 512Kbit, 3.3V-only

M6378A

Abstract: MSM6388 MSM62* ADPCM 63P74 MSM6376 MSM63* ADPCM
Contextual Info: O K I Semiconductor INTRODUCTION 1. VOICE SYNTHESIS LSI PRODUCTS OKI SPEECH LSI PRODUCTS SYNTHESIZER Internal Mask-ROM -M SM 6375 FAMILY- Internal OTP External ROM M SM 6372 128Kbit M SM 6373 256Kbit M SM 6374 512Kbit M SM 6375 1M bit M SM 63P74 75 Family

V54C316162VC

Contextual Info: MOSEL VITELIC V54C316162VC V54C316162VC 200/183/166/143 MHz 3.3 VOLT, 2K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16 -5 -55 -6 -7 Unit 200 183 166 143 MHz Latency 3 3 3 3 clocks Cycle Time tCK 5 5.5 6 7 ns Access Time (tAC ) 5 5.3

Contextual Info: A25L512A Series 512Kbit Low Voltage, Serial Flash Memory With 100MHz Uniform 4KB Sectors Document Title 512Kbit Low Voltage, Serial Flash Memory With 100MHz Uniform 4KB Sectors Revision History History Issue Date 0.0 Initial issue September 11, 2012 0.1 Remove –U grade