512KX24 Search Results

WED8L24513V

Contextual Info: WED8L24513V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION 512Kx24 bit CMOS Static The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V

Contextual Info: WED8L24514V White Electronic Designs Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION  512Kx24 bit CMOS Static  Random Access Memory Array The WED8L24514VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns

WED8L24513V

Abstract: 2106XL
Contextual Info: WED8L24513V White Electronic Designs Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION  512Kx24 bit CMOS Static  Random Access Memory Array     Fast Access Times: 10, 12, and 15ns  Master Output Enable and Write Control  TTL Compatible Inputs and Outputs

512KX24

Abstract: 128KX24
Contextual Info: ma DSP SOLUTIONS aSCTRONIC DÉSKSN& W C X24ASYNCHRONOUS FAMILY 128K AND 512Kx24 SV/3.3V EDI's x24 Asynchronous SRAM family is de­ signed in support of Analog Devices ADSP- * 2106x DSPs. The family includes densities of 128Kx24 and 5!2Kx24. The family of devices

512kx8

Contextual Info: WED8L24514V Asynchronous, 3.3V, 512Kx24 FEATURES 512Kx24 bit CMOS Static The WED8L24514VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the WED8L24514V is ideal for creating a single

5630x

Contextual Info: EDI8L24512V 512Kx24 SRAM Module Preliminary 512Kx24 CMOS High Speed Static RAM Features 512Kx24 bit CMOS Static DSP Memory Solution • Motorola DSP 5630x • Analog Devices SHARCTM Random Access Memory Array • Fast Access Times: 12, 15, 17, and 20ns The EDI8L24512V is a high speed, 3.3V, 12 megabit

Contextual Info: WED8L24514V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION 512Kx24 bit CMOS Static The WED8L24514VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V

ames 5

Abstract: WED8L24514V wed8l24514
Contextual Info: WED8L24514V Asynchronous SR AM, 3.3V SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION n 512Kx24 bit CMOS Static n Random Access Memory Array The WED8L24514VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multilayer laminate substrate. With 10 to 15ns access times, x24

7 k 3456

Abstract: WED8L24513V
Contextual Info: WED8L24513V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION n 512Kx24 bit CMOS Static The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V

DSP5630X

Contextual Info: K EDI8L24512V X 512KX24 SRAMModule E lfC nO M C DE96N1 NC Preliminary 512KX24 CMOSHigh Speed Static RAM Features 512KX24 bit CMOS Static The EDI8L24512V is a high speed, 3.3V, 12 megabit DSP Memory Solution • Motorola DSP 5630x SRAM. The device is available with access times of 12,

Contextual Info: 1.5Mx8/512Kx24, 20 - 45ns, STACK 30A154-03 A 12 Megabit High Speed CMOS SRAM DPS512X24MFn3 PRELIMINARY DESCRIPTION: SLCC Stack The DPS512X24MFn3 High Speed SRAM ‘’STACK’’ modules are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC .

SP5630

Contextual Info: ^EDI ED I8L24512V 512KX24 SRAM Module ELECTRONIC DESIGNS, INC Preliminary 512KX24 CMOS High Speed Static RAM Features 512Kx24 bit CMOS Static The ED I8L24512V is a high speed, 3.3V, 12 m egabit DSP Memory Solution • Motorola DSP 5630x SRAM. The device is available w ith access tim es of 12,

Contextual Info: White Electronic Designs WED8L24513V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION „ 512Kx24 bit CMOS Static „ Random Access Memory Array The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer

5630x

Abstract: 512Kx2
Contextual Info: m E D I8 L 2 4 5 1 2 V x 512Kx24 SRAM Module ELECTRONIC DESIGNS. INC Preliminary 512Kx24 CMOS High Speed Static RAM Features 512Kx24 bit CMOS Static The ED I8L24512V is a high speed, 3.3V, 12 m egabit DSP Memory Solution • SRAM. The device is available w ith access tim es of 12,

transistor DA3 309

Abstract: APR26 DSP56300 DSP56300FM DSP56301 DSP56301UM DSP56302 DSP56303 DSP56303EVM DSP56303UM
Contextual Info: Freescale Semiconductor Application Note Interfacing Flash Memory with the DSP56300 Family of Digital Signal Processors by Phil Brewer This application note describes how to interface Flash memory to the DSP56300 family of DSPs. This document is a supplement to the DSP56300 24-Bit Digital Signal Processor

motorola linear databook

Abstract: small signal transistor MOTOROLA DATABOOK BCR 133 Motorola DSP56300 16 bit processor schematic motorola cmos databook motorola handbook transistor DA3 309 DSP56000 DSP56301
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order by APR 26/D Motorola Order Number Rev. 0 , 4/05/99 Semiconductor Application Note Freescale Semiconductor, Inc. by Phil Brewer 1 Introduction This application note describes how to interface Flash memory to Motorola’s DSP56300 family of digital signal

0d108

Abstract: DSP56300 APR26 DSP56300FM DSP56301 DSP56301UM DSP56302 DSP56303 DSP56303EVM DSP56303UM
Contextual Info: Freescale Semiconductor Application Note APR26 Rev. 1, 10/2005 Interfacing Flash Memory with the DSP56300 Family of Digital Signal Processors by Phil Brewer This application note describes how to interface Flash memory to the DSP56300 family of DSPs. This document is a

817 BNY

Contextual Info: TABLE OF CONTENTS Dense-Pac M icrosystem s M od u le s and M o n o lit h ic s . 9 Emerging Technology/Products. 10