511 MOSFET Search Results

Contextual Info: CENTELLAX UXN6M9P Preliminary 9 GHz Divide-by-8 to 511 Programmable Integer Divider Features • • • • • • • Wide Operating Range: DC - 9 GHz Contiguous Divide Ratios: 8 to 511 Large Output Swings: >1 Vpp/side Single-Ended or Differential Drive

Contextual Info: CENTELLAX UXN6M9P Preliminary 9 GHz Divide-by-8 to 511 Programmable Integer Divider Features • • • • • • • Wide Operating Range: DC - 9 GHz Contiguous Divide Ratios: 8 to 511 Large Output Swings: >1 Vpp/side Single-Ended or Differential Drive

Contextual Info: CENTELLAX UXN14M9P Datasheet 14 GHz Divide-by-8 to 511 Programmable Integer Divider Features • • • • • • • Wide Operating Range: DC - 14 GHz Contiguous Divide Ratios: 8 to 511 Large Output Swings: >1 Vpp/side Single-Ended or Differential Drive

Contextual Info: CENTELLAX UXN6M9P Datasheet 9 GHz Divide-by-8 to 511 Programmable Integer Divider Features • • • • • • • Wide Operating Range: DC - 9 GHz Contiguous Divide Ratios: 8 to 511 Large Output Swings: >1 Vpp/side Single-Ended or Differential Drive Size: 6mm x 6mm

Contextual Info: CENTELLAX UXN14M9P Datasheet 14 GHz Divide-by-8 to 511 Programmable Integer Divider Features • • • • • • • Wide Operating Range: DC - 14 GHz Contiguous Divide Ratios: 8 to 511 Large Output Swings: >1 Vpp/side Single-Ended or Differential Drive

UXN6M9P

Contextual Info: CENTELLAX UXN6M9P Datasheet 9 GHz Divide-by-8 to 511 Programmable Integer Divider Features • • • • • • • Wide Operating Range: DC - 9 GHz Contiguous Divide Ratios: 8 to 511 Large Output Swings: >1 Vpp/side Single-Ended or Differential Drive Size: 6mm x 6mm

Contextual Info: CENTELLAX UXN6M9P Datasheet 9 GHz Divide-by-8 to 511 Programmable Integer Divider Features • • • • • • • Wide Operating Range: DC - 9 GHz Contiguous Divide Ratios: 8 to 511 Large Output Swings: >1 Vpp/side Single-Ended or Differential Drive Size: 6mm x 6mm

SLVU331

Abstract: TPS54218RTE
Contextual Info: User's Guide SLVU331 – September 2009 TPS54218EVM-511 2-A, SWIFT Regulator Evaluation Module 1 2 3 4 Contents Introduction . 2 Test Setup and Results . 4

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7 S b 4 1 4 B DQlSlMt. ÒSI ■ SM6K N-CHANNEL IRF510/511 /512/513 POWER MOSFETS FEATURES • Lower R d s <on > • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

RUR30100

Abstract: rur30100 Diode 30a 1000v RUR3070 RUR3080 RUR3090 VRWM-700V
Contextual Info: RUR3070/30Q0, B U R 3090/30100 HARRIS HARRIS SEMICOND SECTOR 5bE D • 43D2271 00423^5 511 I HAS May 1992 Features 30A Ultrafast Diode With Soft Recovery Characteristic Package 3 - / 7 T0-220AC • Ultrafast with Soft Recovery Characteristic {tfr < 110ns

IRL510

Abstract: IRL511 250M
Contextual Info: N-CHANNEL LOGIC LEVEL MOSFETS IRL510/511 FEATURES TO-220 • Lower R d s <on • Excellent voltage stability • Fast sw itching sp ee d s • R u gg e d polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

SMD DATASHEET

Contextual Info: UXN6M9P Datasheet 9 GHz Divide-by-8 to 511 Programmable Integer Divider Product Highlights • Wide Operating Range: DC-9 GHz 40 pin Quad Flat No Lead QFN 6x6 mm pkg, 0.5 mm pad pitch JEDEC MO-220 Compliant UXN6M9P XXXX Marking Information: UXN6M9P = Device Part Number

1rf510

Abstract: 1RF51
Contextual Info: • M3DE271 0DS3Tfl3 g H A R R IS ÖÖO ■ HAS IRF510/511/512/513 IRF51OR/511R/512R/513R N-Channel Power MOSFETs Avalanche Energy Rated* August 19 91 Package Features • T 0 -2 2 0 A B 4.9A and 5.6A, 80V - 100V TOP VIEW • rD S °n) = 0 -5 4 0 and 0 .7 4 ÎÏ

1RF511

Abstract: IRFS10 IRF 4020 1RF510 IRF 511 MOSfet Irf510 mosfet circuit diagram 1rf510 n-channel IRF511 LS 2512 04 IRF51
Contextual Info: IRF510/511/512/513 IRF51 OR/511R/512R/513R S3 HARRIS N-Channei Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -22 0 A B • 4.9A and 5.6A , 8 0 V - 10 0V TOP VIEW • fD S ion = 0 .5 4 0 and 0 .7 4 fl DRAIN • S ingle Pulse Avalanche E nergy R ated*

LTI24

Contextual Info: LINEAR TECHNOLOGY CORP 53E j> • S S l f l 4L,fl OOObb^a 511 m L T C LT1246 / T L I i m . TECHNOLOGY 1MHz Off-Line Current Mode PWM F€flTUR€S D C S C M P T IO n ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT1246 is an 8-pin, fixed frequency, current mode,

IRF510

Abstract: Gate Drive circuit for irf510 Fairchild Semiconductor DS-513 MTP4N10 IRF-510 DD57 IRF510-513 IRF511 IRF512 IRF513
Contextual Info: 3469674 FAIRCHILD SEMICONDUCTOR D iT l 3 4 1 ^ 7 4 DGH7TB4_fl IRF510-513 MTP4N08/4N10 T 3 9 // N-Channel Power MOSFETs, 5.5 A, 60-100 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description These devices are n-channel, enhancement mode, power

IRF510

Abstract: Gate Drive circuit for irf510 irf510 power IRF5105 7937 4N10 DD57 IRF510-513 IRF511 IRF512
Contextual Info: 3469674 FAIRCHILD SEMICONDUCTOR f l 14 D e I 3 4 ^ 7 4 DGETTBM fl I IRF510-513 MTP4N08/4N10 T 3 9 // N-Channel Power MOSFETs, 5.5 A, 60-100 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description TO-220AB These devices are n-channel, enhancement mode, power

IRF330

Contextual Info: i PRELIMINARY SFF330-28 SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 5.5 AMP 400 VOLTS Designer’s Data Sheet 1.1Q N-CHANNEL POWER MOSFET FEATURES: Rugged construction with polysilicon gate

IRF5210

Abstract: shd230452
Contextual Info: SENSITRON SEMICONDUCTOR SHD230452 TECHNICAL DATA DATA SHEET 722, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.065 Ohm, -20A MOSFET œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRF5210 MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE

Contextual Info: SENSITRON SEMICONDUCTOR SHD230302 TECHNICAL DATA DATA SHEET 602, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.18 Ohm, 7.4A MOSFET œ Fast Switching œ Low RDS on œ Equivalent to IRFE130 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.

Contextual Info: SENSITRON SEMICONDUCTOR SHD230409 TECHNICAL DATA DATA SHEET 721, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.22 Ohm MOSFET œ Isolated and Hermetically Sealed œ Simple Drive Requirements MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT

Contextual Info: FCH47N60N N-Channel SupreMOS MOSFET 600 V, 47 A, 62 mΩ Features Description o The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction SJ technology employing a deep trench filling process that differentiates it from

SERDES

Abstract: fch47n60n 511 MOSFET
Contextual Info: FCH47N60N N-Channel SupreMOS MOSFET 600 V, 47 A, 62 mΩ Features Description o The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction SJ technology employing a deep trench filling process that differentiates it from

IRF9140

Abstract: SFF9140-28
Contextual Info: SSPlI-J B S S E S tll PRELIMINARY SFF9140-28 SOLID STATE DEVICES, INC - - 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 -18 AMP -100 VOLTS 0 .20&2 P-CHANNEL POWER MOSFET