5101 INTEL Search Results

Contextual Info: TLHE/G/K/P510. Vishay Semiconductors High Intensity LED, ∅ 5 mm Untinted Non-Diffused FEATURES • Untinted non diffused lens • Choice of four colors • TLH.5101 and TLH.5102 with reduced light matching factor • TLH.5100 for cost effective design • Medium viewing angle

TLHP5100

Abstract: TLHE5100 TLHG5100 TLHG5101 TLHG5102 TLHK51 TLHK5100 TLHP5101 TLHP5102
Contextual Info: TLHE/G/K/P510. Vishay Semiconductors High Intensity LED, ∅ 5 mm Untinted Non-Diffused FEATURES • Untinted non diffused lens • Choice of four colors • TLH.5101 and TLH.5102 with reduced light matching factor • TLH.5100 for cost effective design • Medium viewing angle

5101 RAM

Abstract: intel 2101 Static RAM
Contextual Info: intei P/N Typ. Current @ 2V Typ. Current @ 5V PA (HA) 5101L 5101L-1 5101L-3 0.14 0.14 0.70 • Single +5V Power Supply ■ Ideal for Battery Operation (5101L) 0.2 0.2 1.0 RAM 5101 FAMILY x 256 x 4 BIT STATIQXMOSjRAM Max Access (ns) 650 450 650 ■ Directly TTL Compatible:

5101 RAM

Abstract: Intel 4289 CD4011AE Intel mcs-40 intel 4002 intel 2101 Static RAM MCS 4040 ttl 7404 draw pin configuration of ic 7404 4011AE
Contextual Info: irrte1 « In te l C o rp o ra tio n 1975 APPLICATION NOTE AP-12 Contents Designing Non-Volatile Memory Systems with Inters 5101 RAM IN T R O D U C T IO N . 1 D E V IC E D E S C R IP T IO N .

5101 RAM

Abstract: ram 5101 intel 5101 intel 2101 5101L ram 5101L-1 intel 2101 Static RAM 5101L-3 5101 intel 5101L
Contextual Info: intei 5101 FAMILY ^ 256 x 4 BIT STATIQX M O S jR A M P/N Typ. Current @ 2V Typ. Current @ 5V PA (HA) Max Access (ns) 0.14 0.2 0.2 1.0 650 450 650 5101L 5101L-1 5101L-3 0.14 0.70 •Single +5V Power Supply ■ Ideal for Battery Operation (5101L) ■ Directly TTL Compatible:

SRPC80D28

Abstract: 74HCT1G04 sspc Circuit Diagram for 5vdc Relay Control Module
Contextual Info: SENSITRON SEMICONDUCTOR SRPC80D28 TECHNICAL DATA DATASHEET 5101, Rev A 28V DC 80AMP Solid State Power Controller Module Description: This Solid State Power Controller SSPC Module is a microcontroller-based Solid State Relay rated at 80A designed to be used in high reliability 28V DC applications. This module has integrated current sensing with

OVS-3101

Abstract: OVS-5101 white led Mega bright
Contextual Info: SMD Super Bright LED OVS-3101 3.0 x 2.0mm 3.0 0.65 1.4 2.0 Cathode 0° 1.3 2.7 Radiation Diagram(s) 20° 10° OVS-5101 30° (5.0 x 5.0 x 1.5mm) 1.0 50° 0.9 1 2 2 1 3 4 4 3 5 6 6 5 60° 0.8 5.4 4.0 1.5 70° 80° 90° 0.7 0.5 0.3 0.1 0.2 0.4 5 40° 1.3 5

HM435101

Abstract: JVC DR -E2LBK s5101* ami HM43 ram 5101 MCM5101 HM6501 MCM5101C65 MCM5101C80 MCM51L01
Contextual Info: M O TO R O LA 256 x 4 BIT STATIC RAM CMOS The M CM 5101 fa m ily o f CM O S R A M s o ffe rs ultra lo w p o w e r and fu l­ ly sta tic ope ration w ith a single 5-volt supp ly. The C M O S 1024-bit devices are organized in 256 w o rd s by 4 bits. Separate data in p u ts and

5101 sram

Abstract: HM435101 ic 5101 ram HM435101 sram CM5101 HM43 3D03 SO65 MCM5101-65
Contextual Info: MOTOROLA MCM5101 MCM51LOI 256 x 4 BIT STATIC RAM CMOS The M CM 5101 fa m ily o f C M O S R A M s o ffe rs ultra lo w p o w e r and fu l­ ly sta tic ope ration w ith a single 5-v o lt supp ly. T he C M O S 1024-bit devices are organized in 256 w o rd s by 4 bits. Separate data in p u ts and

5101ab

Abstract: ic 5101 ram 5101 cmos ram L21S
Contextual Info: in t e i M5101-4, M5101L-4 256 x 4 BIT STATIC CMOS RAM Single +5V Power Supply Military Temperature Range: -55° C to +125° C Ultra Low Standby Current: 200nA/Bit C E 2 Controls Unconditional Standby Mode Fast Access Time — 800ns Three-State Output T h e Intel M 5101 is an u ltra -lo w p o w er 2 5 6 X 4 C M O S R A M sp e cifie d over th e - 5 5 ° C to + 1 2 5 °C tem p e ra tu re range. T h e R A M

Contextual Info: • \ -A M O TO RO LA > ^ PM L / 2 5 6 x 4 B IT S T A T I C R A M CMOS T h e M CM 5101 fam ily of C M O S R A M s o ffe rs ultra lo w p ow er and fu l­ ly sta tic operation w ith a single 5-volt sup ply. T h e C M O S 1024-bit d evice s are organized in 256 w o rd s b y 4 b its. S e p a ra te data inp uts and

Intel mcs-40

Abstract: intel 1101 2116 ram 5101 RAM transistor equivalenti Bipolar PROM programming Creative IC CT 1975 intel 3601 1702a eprom MCS-40
Contextual Info: PRIC E 15 00 memory design handbook m in ia i O k p a r » lio n 1 0 7 7 INTRODUCTION The Intel Memory Design Handbook contains information on the use of Intel’s memory components and support circuits in system application. It is intended to aid the system designer to gain a thorough

Contextual Info: TCO series P Case Tantalum capacitors Chip tantalum capacitors TCO Series P Case zFeatures P zDimensions (Unit : mm) 1) Conductive polymer used for the Anode mark cathode material. 2) Ultra-low ESR. W L (1/10 compared with the conventional type) 3) Screening by thermal shock.

C105

Abstract: H63A IPA75 8AT85
Contextual Info: TCO series Tantalum capacitors Chip tantalum capacitors TCO Series zFeatures A zExternal dimensions (Unit : mm) 1) Conductive polymer used for the Anode mark cathode material. 2) Ultra-low ESR. W L Dimensions (1/10 compared with the conventional type) L

C105

Abstract: IPA75 M705
Contextual Info: TCO series B Case Tantalum capacitors Chip tantalum capacitors TCO Series B Case zFeatures B zDimensions (Unit : mm) 1) Conductive polymer used for the Anode mark cathode material. 2) Ultra-low ESR. (1/10 compared with the conventional type) W L 3) Screening by thermal shock.

Contextual Info: TCTCL0G337MC Chip tantalum capacitors Bottom surface electrode type : Large capacitance TCT Series CL Case Features (CL) 1) Vital for all hybrid integrated circuits board application. 2) Wide capacitance range. 3) Screening by thermal shock. Dimensions (Unit : mm)

Contextual Info: Conductive polymer chip capacitors Standard TCO Series B Case Features (B) 1) Conductive polymer used for the cathode material. 2) Ultra-low ESR. (1/10 compared with the conventional type) 3) Screening by thermal shock. Dimensions (Unit : mm) Anode mark

C105

Abstract: IPA75 M705 7507
Contextual Info: TCO series P Case Tantalum capacitors Chip tantalum capacitors TCO Series P Case zFeatures P zDimensions (Unit : mm) 1) Conductive polymer used for the Anode mark cathode material. 2) Ultra-low ESR. (1/10 compared with the conventional type) W L 3) Screening by thermal shock.

B-7507

Abstract: M705 JIS B-7507
Contextual Info: Conductive polymer chip tantalum capacitors Bottom surface electrode type TCTO Series AL Case zFeatures (AL) 1) Conductive polymer used for the cathode material. 2) Ultra low ESR 3) Small package, but big capacitance 4) Screening by thermal shock zDimensions (Unit : mm)

C105

Abstract: IPA75 M705 22 J.63 capacitor
Contextual Info: Chip tantalum capacitors TCO Series A Case zFeatures A 1) Conductive polymer used for the cathode material. 2) Ultra-low ESR. (1/10 compared with the conventional type) 3) Screening by thermal shock. zDimensions (Unit : mm) Anode mark (Unit : mm) W1 L Dimensions

Contextual Info: TCOB1D685M8R Conductive polymer chip capacitors Standard TCO Series B Case Features (B) 1) Conductive polymer used for the cathode material. 2) Ultra-low ESR. (1/10 compared with the conventional type) 3) Screening by thermal shock. Dimensions (Unit : mm)

Contextual Info: TCOB1A336M8R Conductive polymer chip capacitors Standard TCO Series B Case Features (B) 1) Conductive polymer used for the cathode material. 2) Ultra-low ESR. (1/10 compared with the conventional type) 3) Screening by thermal shock. Dimensions (Unit : mm)

Contextual Info: TCOB0G227M8R Conductive polymer chip capacitors Standard TCO Series B Case Features (B) 1) Conductive polymer used for the cathode material. 2) Ultra-low ESR. (1/10 compared with the conventional type) 3) Screening by thermal shock. Dimensions (Unit : mm)

Contextual Info: TCOB0E337M8R Conductive polymer chip capacitors Standard TCO Series B Case Features (B) 1) Conductive polymer used for the cathode material. 2) Ultra-low ESR. (1/10 compared with the conventional type) 3) Screening by thermal shock. Dimensions (Unit : mm)