50V 1215MHZ Search Results

Contextual Info: 800 Watts, 50V, 960-1215MHz DESCRIPTION PACKAGE The high power HVV0912-800 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed avionics applications operating over the frequency range of 960 MHz and 1215 MHz. FEATURES

Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin The RFHA1025 is a 50V 280W high power discrete amplifier designed for L-band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications. Using an advanced high

capacitor 10uF/63V

Abstract: capacitor 220uF/63V J152 100 pf, ATC Chip Capacitor pF CAPACITOR 100v 100b*500x 10uf 63v capacitor capacitor 1206 63V ID Innovations resistor smd 1206 102
Contextual Info: The innovative Semiconductor Company! HVV0912-150 HIGH VOLTAGE, HIGH RUGGEDNESS L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V

uhf 150w mosfet

Abstract: 10uF CAPACITOR 1210 PACKAGE capacitor 10uF/63V smd transistor EK 10uf 63v capacitor 50V 1215MHZ banana socket datasheet capacitor 220uF/63V diode gp 429 DS2346
Contextual Info: The innovative Semiconductor Company! HVV0912-150 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10 s Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V

Contextual Info: Part Number: Integra ILD0912M400HV TECHNOLOGIES, INC. Avionics TACAN RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD0912M400HV is designed for Avionics TACAN systems operating at 960-1215MHz.

7121

Abstract: MS2267 50V 1215MHZ
Contextual Info: MS2267 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • 960 – 1215MHz 50 VOLTS 5:1 VSWR CAPABILITY @ RATED CONDITIONS INPUT/OUTPUT MATCHING POUT = 250 WATTS GP = 8.0 dB MINIMUM COMMON BASE CONFIGURATION DESCRIPTION: The MS2267 is a high power Class C NPN transistor

MS2267

Abstract: TACAN
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2267 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • 960 – 1215MHz 50 VOLTS 5:1 VSWR CAPABILITY @ RATED CONDITIONS INPUT/OUTPUT MATCHING

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2267 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • 960 – 1215MHz 50 VOLTS 5:1 VSWR CAPABILITY @ RATED CONDITIONS INPUT/OUTPUT MATCHING

MS2267

Abstract: 50V 1215MHZ
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2267 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • 960 – 1215MHz 50 VOLTS 5:1 VSWR CAPABILITY @ RATED CONDITIONS INPUT/OUTPUT MATCHING

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2267 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • 960 – 1215MHz 50 VOLTS 5:1 VSWR CAPABILITY @ RATED CONDITIONS INPUT/OUTPUT MATCHING

Contextual Info: Part Number: Integra IB0912M600 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912M600 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing

Contextual Info: Part Number: Integra ILD0912M150HV TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD0912M150HV is designed for Avionics systems operating at 960-1215 MHz. Operating at 10µs,

Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

AM0912-080

Abstract: S042
Contextual Info: AM0912-080 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 90 W MIN. WITH 13 dB GAIN BANDWIDTH 225 MHz

AM0912-080

Abstract: S042
Contextual Info: AM0912-080 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 90 W MIN. WITH 13 dB GAIN BANDWIDTH 225 MHz

AM0912-080

Abstract: S042 13w 90 AM0912-08
Contextual Info: AM0912-080 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 90 W MIN. WITH 13 dB GAIN BANDWIDTH 225 MHz

Contextual Info: REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 818 982-1200 Specifications are subject to change without notice. WWW.ADSEMI.COM H V V0912-150 H igh Voltage, H igh Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle

Contextual Info: /= T SGS-THOMSON A ; l , A M 0 9 1 2 -0 8 0 RF & MICROWAVE TRANSISTORS _ AVIONICS APPLICATIONS • R EFR AC TO R Y/G O LD M ETALLIZATIO N . EM ITTER SITE BALLASTED ■ LOW TH ER M AL R ESISTAN C E . IN PU T/O U TPU T M ATCHING ■ O VE R LA Y G EO M ETR Y

AM0912-300

Contextual Info: AM0912-300 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 300 W MIN. WITH 7.0 dB GAIN

AM0912-300

Abstract: TACAN transistor
Contextual Info: AM0912-300 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 300 W MIN. WITH 7.0 dB GAIN

AM0912-300

Abstract: 0912-300 so 960
Contextual Info: AM0912-300 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 300 W MIN. WITH 7.0 dB GAIN

Contextual Info: SGS-1:ili ra©H gi H0MS0N AM0912-080 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS • • ■ ■ . ■ REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE > P out = 90 W MIN. WITH 13 dB GAIN

TRANSISTOR 5DW

Contextual Info: SGS-THOMSON IU A M 0 9 1 2 -3 0 0 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . • . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAUCERAMIC HERMETIC PACKAGE