50JUA Search Results

MP5010

Abstract: MP5010HN MP5010GN MP5010JT MP5010LT ICL8069
Contextual Info: M MICRO POWER SYSTEMS Very Low Tempco 1.2 Voltage Reference MP5010 FEATURES • Lowest Tempco in the Industry: 5 ppm/°C Max. • Superior Replacement for Other 1.2V References • Wide Operating Range: 50juA — 10 mA • Low Output Impedance: 0.6ft Typical

DL6307

Abstract: DL6310 DL6305 DL6306
Contextual Info: DATATRONICS 2bE D • 2b514fl2 000021b fi ■ ‘T - 4 0 - 1 3 SER IES DL6300 DIGITAL DELAY M O D U LES .• 14 Pin Package • T T Lan d D T L Compatible • 5 Equally Spaced Taps Specifications • • • • • • • • • • 4.75 to 5.25VDC 50juA Max

Contextual Info: 128 Bit X24001 16 x 8 Bit ldenti PROM FEATURES DESCRIPTION • 2.7V to 5.5V Power Supply • 128 Bit Serial E^PROM • Low Power CMOS — Active Current Less Than 1mA — Standby Current Less Than 50juA • Internally Organized 1 6 x 8 • 2 Wire Serial Interface

Contextual Info: □ ANALOG DEVICES FEATURES Superior Replacement for Other 1.2V References Wide Operating Range: SOfiA to 5mA Low Power: 60/iW Total Pq at 50juA Low Temperature Coefficient: 10ppm/°C max, 0 to +70°C AD589M 25ppm/°C max, -55°C to +125°C (AD589UI Two-Terminal "Zener" Operation

TRANSISTOR 2SA1076

Abstract: 2SA1075 2SA1076 TRANSISTOR 2Sa 1075 2SC2526 transistor 2SA TRANSISTOR 2sc2526 transistor 2SA 374 2sc2525 2SA audio POWER TRANSISTORS
Contextual Info: I? FUJITSU MICROELECTRONICS 374^7^2 F U JIT S U 2SÄ1075 M IC R O E L E C T R O N IC S 374970^ □ 2 S Ä 1076 VaS-tais FUJITSU MICROELECTRONICS i7c oififn SILICON PNP RING E M IT T E k TRANSISTORS 12 AMP, 120 & 160 VOLT DESCRIPTION FEATURES The 2SA1075/2SA1076 are wellsuited for high frequency power

MN1554

Abstract: ram tite 45 MN1551 MN1500 MN1550 pshxy
Contextual Info: PANASONIC INDL/ELEK -CIO 72 Î>É"| 1^33052 DOOSñt.1 3 |~~ MN 1500 Family— 5 MN 1554 MN 1550 Series DD 'J £ a —$>(4-Blt) 6932852 PANASONIC 72C INDL»ELECTRONIC 05861 MN1 554(M N 1 5 5 0 Seríes igttffê • CMOS 4 M'V I- l f - y y - T O n a y ü a - J

LVX273

Abstract: 74LVX273 74LVX273M 74LVX273MTC 74LVX273MTCX 74LVX273MX 74LVX273SJ 74LVX273SJX M20D
Contextual Info: LVX273 National Semiconductor & 74LVX273 Low Voltage Octal D Flip-Flop General Description Features The LVX273 has eight edge-triggered D-type flip-flops with individual D inputs and Q outputs. The common buffered Clock CP and Master Reset (MR) input load and reset

Contextual Info: UESI101 UES1102 UES1103 RECTIFIERS High Efficiency, 2.5A BYV27-50 BYV27-100 BYV27-150 FEATURES DESCRIPTION • • • • An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are

Contextual Info: 3A Adjustable Linear Regulator Description The CS-5203-1 linear regulator pro­ vides 3A at adjustable output volt­ ages with an accuracy of +1.5%. The device uses two external resis­ tors to set the output voltage with­ in a 1.25V to 5.5V range. The regulator is intended for use as

SRC14

Contextual Info: TPIC44H01 4-CHANNEL SERIAL AND PARALLEL HIGH-SIDE PRE-FET DRIVER SLIS088 - SEPTEMBER 1998 DA PACKAGE TOP VIEW Serial or Parallel Control of Gate Outputs Sleep State for Low Quiescent Current cs Independent On-State Source Short-to-Ground (Shorted-Load) Detection/Protection

tube 2B29

Abstract: E21B lc6554 bp options bml dpm 001 tia lc6554h 4958 LC6500 LC6554D NFS-80A-0100 EVA800
Contextual Info: Ordering num ber:EN 2156B CMOS LSI [ No. 2156B LC6554D,6554H 4K-Byte ROM-Contained Single-Chip 4-Bit Microcomputers with FLT, LED Drivers The LC6554D/H are single-chip 4-bit microcomputers that contain a 4K-byte ROM, IK -b it RAM, and have 64 pins. The LC6554D/H have 57 pins fo r ports - 28 pins fo r 7 input/output common ports, 21 pins for 6 output ports, and

Contextual Info: Am54S/74S139 •Am93S21 Dual 2-Line to 4-Line Decoder/Demultiplexer Distinctive Characteristics • T w o independent decoders/demultiplexers • • • 100% reliability assurance testing in com pliance with M IL -S T D -8 8 3 . Advanced Sch ottky technology

74S181N

Abstract: LS/74S181
Contextual Info: Am54S/74S181 Four-Bit Arithmetic Logic Unit/Function Generator Distinctive Characteristics • Advanced Schottky technology • Performs 16 arithmetic operations including add, sub­ tract, double and compare. • Performs all 16 possible logic operations of two

Contextual Info: ASSEMBLY NUMBER LENS 5 5 0 - 1 I07F RED 5 5 0 - I207F YELLOW 550-I307F GREEN DIM. COLOR "A" . 197 DIFFUSED OPERATING LED CHARACTERISTICS .197 LUMINOUS INTENSITY WAVELENGTH DOMINANT FORWARD VIEWING REV. 25°C GREEN MIN. 1.5 1.2 1.2 TYP. 2.3 1.8 1.8 583 565

TRANSISTOR 2SC

Abstract: transistor 2sc 18 2SC2522 transistor 2sc pnp fujitsu ring emitter 2sc2523 high power switching transistor 2sc
Contextual Info: SILICON HIGH SPEED POWER TRANSISTOR 2SC 2522 2SC 2523 S e p te m b e r 19 79 SILICON NPN RING EMITTER TRANSISTOR RET T he 2 S C 2 5 2 2 /2 S C 2 5 2 3 are silicon NPN general purpose, high pow er switching transistors fabricated w ith Fujitsu's unique Ring E m itter Transistor (R E T ) tec h ­

2SC2526

Abstract: 2SC2525 TRANSISTOR 2Sc 2525 TRANSISTOR 2SC TRANSISTOR 2SC2525 2SA1076 LC 311 TRANSISTOR 2sc2526 "ring emitter" 2SC25
Contextual Info: F U J IT S U SILICON HIGH SPEED POWER TRANSISTOR 2SC 2525 2SC 2526 S epte m be r 19 79 SILICON NPN RING EMITTER TRANSISTOR RET The 2 S C 2 5 2 5 /2 S C 2 5 2 6 are silicon NPN general purpose, high pow er switching transistors fabricated w ith Fujitsu's unique Ring E m itter Transistor (R E T ) tec h ­

NPN transistor 2527

Abstract: 2SA1077 tf 011
Contextual Info: F U J IT S U SILICON HIGH SPEED POWER TRANSISTOR 2SA1077 Septem ber 1979 SILICON PNP RING EM ITTER TRANSISTOR RET T h e 2 S A 1 0 7 7 is silicon PNP general purpose, high pow er sw itching transistors fab ricated w ith Fujitsu's unique Ring E m itte r Transistor (R E T ) te c h n o lo g y. R E T

NS4890

Abstract: NSA 2000 inverter 7490DC XC74UL32AAN
Contextual Info: XC74UH00AAM CMOS Logic ♦ CM OS 2-Input NAND Gate • Applications ♦ High Speed Operation tpd=7ns TYP ▲ ~ xw .x n ♦ Operating Voltage Range 2V~6V • • ♦ Palmt0Ps Digital Equipment Low Power Consum ption 1/iA MAX ■ General Description ■ Features

op2134

Abstract: op2132 radio av receiver schematic diagram OP2137 AB1432 28Kp Fiber-optic temperature sensor 850nm photodiode cascode transimpedance NE5211D SA5211
Contextual Info: N E /S A 5 2 1 1 Transimpedance Amplifier 180MHz Preliminary Specification DESCR IPTIO N The NE/SA5211 is a 28k£2 transimpe­ dance, wide-band, low noise amplifier with differential outputs, particularly suit­ able for signal recovery in fiber optic receivers. The part is ideally suited for

Laser Diode for cr rw

Abstract: b0711 tsz02201 BU9390FV BU9390FV-1 BU9390FV-1-2 TSZ22111
Contextual Info: RDNm PRODUCTS TYPE Sem iconductor IC BU9390FV STRUCTURE - Silicon Monolithic Integrated Circuit PRODUCT SERIES •' 4CH Laser Diode Driver fo r CD-R/RW TYPE : BU9390FV PACKAGE OUTLINES : Figure. 1 BLOCK DIAGRAM Figure. 2 APPLICATION Figure. 3 TEST CIRCUIT

LT 7207

Abstract: 7207a n07a ICM7207IPD ICM7207A ICM7207AIPD w6553 ta 7207 ICM7208 7207 switch
Contextual Info: IC M 7 2 0 7 / A CMOS Timebase Generator GENERAL DESCRIPTION FEATURES The ICM7207/A consist of a high stability oscillator and frequency divider providing 4 control outputs suitable for fre­ quency counter timebases. Specifically, when used as a fre­ quency counter timebase in conjunction with the ICM7208,

CX20115

Abstract: E9011 sony capstan motor cd z5v cap CXA1512M CXA1512N CXAX512M VCE405
Contextual Info: CXA1512M/N SONY Motor Sensor Amplifier for 8m m Camcorder Description The CXA1512M/N is developed as a motor sensor amplifier for 8mm videos. CXA 1512M 14pin SOP Plastic CXA1512N 14pin SSOP (Plastic) Features • Uses a variable threshold comparator efficient

Contextual Info: Signelìcs 7451, LS51, S51 Gates '51, S51 Dual 2-Wide 2-Input AND-OR-lnvert Gate LS51 Dual 2-Wlde 3-Input, 2-Wide 2-Input AND-OR-lnvert Gate Product Specification Logic Products FUNCTION TABLE '51, ’S51, h 'LS51 TYPICAL PROPAGATION DELAY TYPICAL SUPPLY CURRENT

Contextual Info: UR105-UR125 UR205-UR225 RECTIFIERS Radiation Tolerant, 1 Amp-2 Amp DESCRIPTION These devices are particularly suited to applications where radiation is present. These units have unique ability to with­ stand high levels of neutron, gamma and electron radiation.