50JJS Search Results

Contextual Info: TD62007P TD62007P DAR LINGTON BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC D R IV E R Features • • • • Output Rating . 22v/150mA Output Clamp Diodes Inputs Compatible with 9 % 15V P-MOS, C-MOS Protective Diodes Against a Negative Input Voltage

8086 interrupt vector table

Abstract: microprocessor 8086 Program relocation 8086 manual 8086 timing diagram 8282/8283 latch used for 8086 8086 microprocessor architecture diagram 8086 physical memory organization 8286/8287 amd 8086 manual of microprocessors 8086
Contextual Info: 8086 16-Bit M ic ro p ro ce sso r ¡A P X 8 6 Fam ily F IN A L DISTINCTIVE CHARACTERISTICS • • • • • • M U LTIBU S system interface Three speed options - 5 M H z for 8086 - 8 M H z for 8086-2 - 10M H z for 8086-1 Directly addresses up to 1 Mbyte of memory

FP3000

Abstract: FP3000A SI 1360 H fp3024 lucas 1030 FP3012,A FP3120 FP3006 ai 937
Contextual Info: The foldback characteristic provides the suppressors with an increased surge current handling capability coupled with lower clamping voltages compared with industrial standard devices. Each device is 100% tested. In the event of an abnormal surge causing the ratings of

6457 maintal

Abstract: MIL-C-22759 honeywell 6457 Ai203-ceramic din 7168 317xc MIL-STD-127b 53-S1 Hytrel G Raychem DR-25
Contextual Info: JU L HONEYW ELL Logo A rticle Nr. Sensing face/0 \ «¡M, ¡ m u í 3 5+0'5 ' - 0,2 lin ú -i* H i i l l í p ill t / l\ ¡ l| j | í Housing and mounting nuts: Stainless steel i /^\ Cabel shield connected /§\ : Sensing face: 1.4541 to DIN 17440 to housing

LTC1100

Abstract: lt1167 Instrumentation Amplifier lt1167 A2N4
Contextual Info: r r u n m TECHNOLOGY _ LT1167 Single Resistor G ain P ro g ra m m a b le , Precision Instrum en tation A m p lifie r FCRTURCS DCSCRIPTIOn • Single Gain Set Resistor: G = 1 to 10,000 ■ Gain Error: G = 10, 0.08% Max ■ Gain Nonlinearity: G = 1 0 ,10ppm Max

KM28C64A-20

Abstract: KM28C64A15 KM28C65A KM28C65A-20 KM28C64A-25 KM28C64A-12 KM28C65A15 KM28C64A25
Contextual Info: SAMSUNG ELECTRONICS INC D • 7^4142 OOlböfiO TSS SflGK CMOS EEPROM KM28C64A/KM28C65A 8 K x 8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C64AJ65A: Commercial — KM28C64AK65AI: Industrial • Simple Byte Write & Page Write

PJ 0416 1v

Abstract: til 3010 1208FRAM 7S5SG15
Contextual Info: RAMTRON 4SE CORP D 7SSSG15 GGÜÜO^b 12D I RAH F M 1 2 0 8 F R A M M e m o ry r ^ lM T R O 4,096-Bit Nonvolatile Ferroelectric RAM Product Preview N Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512wx 8b ■ CMOS Technology with Integrated Ferroelectric

AOR 3000

Abstract: D0214 pax thyristor marking aor 1cv5 22J 1KV Thyristor 100A,100V thyristor 150A
Contextual Info: T h y r i s t o r s SiBOD B r e a k o v e r D e v i c e s C 3 Y D O M I Control overpower T "Crow B sr” Prolsctlan MECHANICAL CHARACTB1ST1CS 76 protect sensitive teieconYnunications • Transfer molded, void free epoxy body circuitry, Qydcsm Thyristors (SiBCST

C618

Abstract: j 182 C1832 C571 CMD10B G0011 C233
Contextual Info: TO -I8 ' SOLID STATE LAMPS 'it » _ • J08EC4H • . . CHICAGO MINIATURE LAMP STANDARD RED 960 U rW " 0 B 0 0 D 11 S 2 a ■ CHICAGO MINIATURE BRAND 01 182 D ~T^ Q j ‘ CMD10B PACKAGE DIMENSIONS DESCRIPTION The CMD10B is a GaAsP light emitting diode mounted on a TO-18 header with a clear epoxy

def stan 07-55

Contextual Info: -S5 ‘O C o ^ *O ia ^^ s = t> 5 * -S i TESTS » -o ìI < TECHNICAL DATA Effective aenalnq distança [m m ] ]mm] Differential travel M . StobBlty of >en»tng dirt an c< Reproduceobìllty w Repetition rote of awning [Hz] Swing—on delay Power—on false pulse

TCZT8021

Abstract: u 110 telefunken 8020-TCZT
Contextual Info: TELEFUNKEN ELECTRONIC ‘ÎÛD D • ô'ÏSOQ'îb 0007661 5 IALGG TCZT 8020 •TCZT 8021 iniLitPWl&ilK electronic Creativa Tsehnotogfes r-V /-7 / Matchable Pairs - Emitter and Detector Emitter: Detector: Application: GaAs IR Emitting Diode Silicon NPN Epitaxial Planar Phototransistor

LT1220

Contextual Info: ITECHNOLOGY M LTC1273 LTC1275/LTC1276 12-Bit, 300ksps Sampling A /D Converters with Reference F€flTUR€S D C S C R IP T IO n • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC1273/LTC1275/LTC1276 are 300ksps, sampling 12-bit A/D converters that draw only 75mW from single

5962-9213901HXC

Abstract: mhf 2805s
Contextual Info: interpoint r 10301 Willows Road P.O. Box 97005 MHF+ SERIES DC-DC CONVERTERS Redmond, WA 98073-9705 TEL: 206 8B2-3100 TEL: (800) 822-8782 FAX: (206) 882-1990 • • • • • • • • • Up to 15 watts output power Full power operation from -5 5 to + 125°C

fp1016

Abstract: keytek* 424 generator fp1016a FP1018 FP103 FP1030A FP1000A pic 6030 ledex FP1009
Contextual Info: TRANSHIELD* SILICON SURGE SUPPRESSOR DIODES 9-275V BREAKDOWN VOLTAGES FP1000& FP1000A SERIES V_ _ _ Transhield FP1000 and FP1000A surge suppressors are silicon diffused junction devices having bidirectional foldback characteristics. Devices are available having tolerances on the

DFP300

Abstract: sc 3710 DFP180 DFP008 DFP006 DFP007 DFP009 DFP012 cc 3025 diode
Contextual Info: The suppressors are intended for telecommunication, data transmission and general applications where permanent damage could otherwise be caused to integrated circuits, m.o.s. devices, hybrids and other voltage sensitive semiconductors and components by surges deriving from lightning, electrostatic discharges, NEMP, inductive switching, etc.

DIN ISO 1302

Abstract: Si 6823 def stan 07-55 ZS-00209-71 raychem EPD 20 b974 EPD39696B B9747 39696B CS02
Contextual Info: -S5 ‘O C o ^ *O ia ^^ s = t> 5 * -S i TESTS » -o ìI < TECHNICAL DATA Effective aenalnq distança [m m ] ]mm] Differential travel M . StobBlty of >en»tng dirt an c< Reproduceobìllty w Repetition rote of awning [Hz] Swing—on delay Power—on false pulse

Contextual Info: u n m TECHNOLOGY Dual, Precision JFET Input O p A m p F6RTUR6S DCSCMPTIOn • Handles 10,000pF Capacitive Load The LT1457 is a dual, JFET input op amp optimized for handling large capacitive loads In combination with preci­

CD4047 pin diagram

Abstract: pin of ic cd4047 CD4047 working CD4047 POWER pwm amplifier sawtooth wave op amp application CD4047 INTERNAL DIAGRAM LTC1267
Contextual Info: n w m l t c i 4 3 o a TECHNOLOGY High P ow er S tep -D ow n S w itching R eg u la to r C o n tro lle r FCRTURCS DCSCRIPTIOfl • High Power 5V to 1.xV-3.xV Switching Controller: Can Exceed 10A Output ■ Maximum Duty Cycle > 90% Permits 3.3V to 2.xV Conversion Using a Low Power 5V Supply

ZP3150

Abstract: ZP3030 lucas zp3056 zp3150a bo 947 ZP3006 ZP3006A ZP3007 ZP3300 ZP3100
Contextual Info: y V . Transhield ZP3000 and ZP3000A surge suppressors are silicon diffused junction pn devices having unidirectional positive clamping characteristics. Devices are available having tolerances on the nominal breakdown voltages of ± 10% ZP3000 series and ± 5%