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    Honeywell Sensing and Control GPTJG3YG050BSCHX

    GENERAL PRESSURE TRANDUCER -DIN
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    DigiKey GPTJG3YG050BSCHX Bulk 50
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    Honeywell Sensing and Control MIPHG1XX050BSCHX

    MIPS,5M CABLE,G1 PORT,50BARS,4-2
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    DigiKey MIPHG1XX050BSCHX Bulk 60
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    Master Electronics MIPHG1XX050BSCHX
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    Honeywell Sensing and Control MIPAG1XX050BSCHX

    MIPAG1XX050BSCHX
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    DigiKey MIPAG1XX050BSCHX Bulk 85
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    Mouser Electronics MIPAG1XX050BSCHX 85
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    Newark MIPAG1XX050BSCHX Bulk 85
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    Honeywell Sensing and Control MIPAN1XX050BSCHX

    MIPAN1XX050BSCHX
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    DigiKey MIPAN1XX050BSCHX Bulk 85
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    Mouser Electronics MIPAN1XX050BSCHX
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    Newark MIPAN1XX050BSCHX Bulk 85
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    Master Electronics MIPAN1XX050BSCHX
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    TE Connectivity EPB-350BS-C20001

    EPB-B02-350B
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    DigiKey EPB-350BS-C20001 Bulk 1
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    Master Electronics EPB-350BS-C20001
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    Sager EPB-350BS-C20001 1
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    Find more 50BSC price and stock on Findchips.com

    50BSC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    4947

    Abstract: 2gb2 ANPEC 27BSC APM4947
    Contextual Info: APM4947 Dual P-Channel Enhancement Mode MOSFET Pin Description Features • -30V/-2.5A , RDS ON =90mΩ(typ.) @ VGS=-10V • • • 5 RDS(ON)=145mΩ(typ.) @ VGS=-4.5V  / Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged & , %


    Original     		APM4947 -30V/-2 4947 2gb2 ANPEC 27BSC APM4947 PDF

    ANPEC

    Abstract: Anpec Electronics APM9935 9935 mosfet A999 27BSC APM9935K MARKING CODE 9935
    Contextual Info: APM9935 Dual P-Channel Enhancement Mode MOSFET Features • • • • Pin Description -20V/-6A, RDS ON =45mΩ(max.) @ VGS=-4.5V 5 RDS(ON)=65mΩ(max.) @ VGS=-2.5V  / Super High Dense Cell Design for Extremely & , % , Low RDS(ON) 5 ! $ , Reliable and Rugged


    Original     		APM9935 -20V/-6A, ANPEC Anpec Electronics APM9935 9935 mosfet A999 27BSC APM9935K MARKING CODE 9935 PDF

    ANPEC

    Abstract: APM4429 Anpec Electronics diode marking H2
    Contextual Info: APM4429 P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-13A, RDS ON = 8mΩ(typ.) @ VGS = -20V 5 RDS(ON) = 9mΩ(typ.) @ VGS = -10V RDS(ON) =13mΩ(typ.) @ VGS = -4.5V • • •  5 Super High Density Cell Design & , % , 5 ! $ , / "


    Original     		APM4429 -30V/-13A, ANPEC APM4429 Anpec Electronics diode marking H2 PDF

    ANPEC

    Abstract: 9953k marking G3 27BSC APM9953 0004m
    Contextual Info: APM9953 P-Channel Enhancement Mode MOSFET Pin Description Features • -20V/-3A , RDS ON =75mΩ(typ.) @ VGS=-10V • • • 5 RDS(ON)=90mΩ(typ.) @ VGS=-4.5V  / Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged & , % , 5 !


    Original     		APM9953 -20V/-3A ANPEC 9953k marking G3 27BSC APM9953 0004m PDF

    Anpec Electronics

    Abstract: ANPEC MARKING 1F n-and P-channel power mosfet SO-8 APM9928 transistor marking 1f 27BSC VGS-30V PCHANNEL
    Contextual Info: APM9928 Dual Enhancement Mode MOSFET N-and P-Channel Features • N-Channel 20V/5A , • • • • Pin Description 5 RDS(ON)=35mΩ(typ.) @ VGS=4.5V RDS(ON)=50mΩ(typ.) @ VGS=3.0V  / P-Channel & , % , 5 ! $ , / " # , -20V/-3.2A , RDS(ON)=80mΩ(typ.) @ VGS=-4.5V


    Original     		APM9928 -20V/-3 Anpec Electronics ANPEC MARKING 1F n-and P-channel power mosfet SO-8 APM9928 transistor marking 1f 27BSC VGS-30V PCHANNEL PDF

    APM4953

    Abstract: PM4953 ANPEC Anpec Electronics marking G5 MOSFET mosfet 4953 5H MARKING 6H MARKING 27BSC 4953 mosfet
    Contextual Info: APM4953 Dual P-Channel Enhancement Mode MOSFET Features • • • • Pin Description -30V/-4.9A, RDS ON = 53mΩ(typ.) @ VGS = -10V 5 RDS(ON) = 80mΩ(typ.) @ VGS = -4.5V & , % , Super High Density Cell Design / Reliable and Rugged 5 ! $ , SO-8 Package


    Original     		APM4953 -30V/-4 APM4953 PM4953 ANPEC Anpec Electronics marking G5 MOSFET mosfet 4953 5H MARKING 6H MARKING 27BSC 4953 mosfet PDF