506BT Search Results
506BT Price and Stock
STMicroelectronics STTH506B-TRDiode: rectifying; SMD; 600V; 5A; 30ns; DPAK; Ufmax: 1.1V; Ifsm: 55A |
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STTH506B-TR | 2,203 | 1 |
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STTH506B-TR | Tape & Reel | 5,000 | 15 Weeks | 2,500 |
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STTH506B-TR | 9,964 |
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STTH506B-TR | Tape & Reel | 2,200 | 100 |
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| STTH506B-TR | Cut Tape | 2,200 | 1 |
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STTH506B-TR | 9,964 | 1 |
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STTH506B-TR | 460 | 1 |
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| STTH506B-TR | 20 |
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STTH506B-TR | 2,500 | 1 |
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STTH506B-TR | 5,080 |
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STTH506B-TR | 12,500 | 16 Weeks | 2,500 |
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STTH506B-TR | 12 |
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STTH506B-TR | 16 Weeks | 2,500 |
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STTH506B-TR | 7,100 |
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STTH506B-TR | 30,000 |
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Ningbo connfly electronic CO LTD DS1020-05-06BT1Connector: FFC/FPC; data; tinned; SMT; PIN: 6; copper; 1mm; vertical |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DS1020-05-06BT1 | 410 | 5 |
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Glenair Inc 440HJ069M1506-BT- Bulk (Alt: 440HJ069M1506-BT) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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440HJ069M1506-BT | Bulk | 4 Weeks | 1 |
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440HJ069M1506-BT |
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440HJ069M1506-BT | Bulk | 1 |
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440HJ069M1506-BT |
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Glenair Inc 440HH030M2506-BT- Bulk (Alt: 440HH030M2506-BT) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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440HH030M2506-BT | Bulk | 4 Weeks | 1 |
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440HH030M2506-BT |
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440HH030M2506-BT | Bulk | 1 |
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440HH030M2506-BT |
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Qorvo QPF4506BTR13-5K- Tape and Reel (Alt: QPF4506BTR13-5K) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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QPF4506BTR13-5K | Tape & Reel | 24 Weeks | 5,000 |
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506BT Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: NVMFD5483NL Power MOSFET 60 V, 36 mW, 24 A, Dual N−Channel Features • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature AEC−Q101 Qualified and PPAP Capable |
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nvmfd5483nlnvmfd5483nl/d | |
5853NL
Abstract: NVMFD5853NL
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nvmfd5853nlaec-q101nvmfd5853nl/d5853nl | |
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Contextual Info: NVMFD5852NL Power MOSFET 40 V, 6.9 mW, 44 A, Dual N−Channel Logic Level, Dual SO−8FL Features • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable |
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nvmfd5852nlaec-q10110ablenvmfd5852nl/d | |
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Contextual Info: NVMFD5852NL Power MOSFET 40 V, 6.9 mW, 44 A, Dual N−Channel Logic Level, Dual SO−8FL Features • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable |
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nvmfd5852nlaec-q10110cablenvmfd5852nl/d | |
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Contextual Info: NVMFD5485NL, NVMFD5485NLWF Power MOSFET 60 V, 44 mW, 20 A, Dual N−Channel Features • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature |
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nvmfd5485nlnvmfd5485nlwfnvmfd5485nl/d | |
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Contextual Info: NVMFD5873NL Power MOSFET 60 V, 13 mW, 58 A, Dual N−Channel Logic Level, Dual SO−8FL Features • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NV Prefix for Automotive and Other Applications Requiring Unique |
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Contextual Info: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature |
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nvmfd5877nlaec-q101nvmfd5877nl/d | |
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Contextual Info: NVMFD5852NL Power MOSFET 40 V, 6.9 mW, 44 A, Dual N−Channel Logic Level, Dual SO−8FL Features • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable |
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nvmfd5852nlaec-q10110ablenvmfd5852nl/d | |
CHQ 1838
Abstract: CK 77- 94V-0 cam pinout tda 12011 nec mys 501 MYS 99 726 TDA 7786 crouzet 88 810.1 MYS 99 832 Dry Reed Relay DG Rohs alps 3889
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Contextual Info: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature |
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Contextual Info: NVMFD5489NL, NVMFD5489NLWF Power MOSFET 60 V, 65 mW, 12 A, Dual N−Ch Logic Level Features • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature |
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nvmfd5489nlnvmfd5489nlwfnvmfd5489nl/d | |
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Contextual Info: NVMFD5877NL, NVMFD5877NLWF Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFD5877NLWF − Wettable Flanks Product |
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nvmfd5877nlnvmfd5877nlwfaec-q101nvmfd5877nl/d | |
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Contextual Info: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature |
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nvmfd5877nlaec-q101nvmfd5877nl/d | |
5852NL
Abstract: NVMFD5852NLT1G
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nvmfd5852nlaec-q101nvmfd5852nl/d5852nl+1 | |
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dual TMB 1800
Abstract: 5852NL
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nvmfd5852nlaec-q10110cablenvmfd5852nl/d+2 | |
NVMFD5853NLContextual Info: NVMFD5853NL Power MOSFET 40 V, 10 mW, 34 A, Dual N−Channel Logic Level, Dual SO−8FL Features • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses AEC−Q101 Qualified |
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nvmfd5853nlaec-q101nvmfd5853nl/d | |
5877NL
Abstract: NVMFD5877NLT1G
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nvmfd5877nlaec-q101nvmfd5877nl/d5877nl+1 | |
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Contextual Info: NVMFD5485NL Power MOSFET 60 V, 44 mW, 20 A, Dual N−Channel Features • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature AEC−Q101 Qualified and PPAP Capable |
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nvmfd5485nlnvmfd5485nl/d | |
5873nlContextual Info: NVMFD5873NL, NVMFD5873NLWF Power MOSFET 60 V, 13 mW, 58 A, Dual N−Channel Logic Level, Dual SO−8FL http://onsemi.com Features • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses |
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nvmfd5873nlnvmfd5873nlwfaec-q101nvmfd5873nl/d+1 | |
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Contextual Info: NVMFD5853NL, NVMFD5853NLWF Power MOSFET 40 V, 10 mW, 34 A, Dual N−Channel Logic Level, Dual SO−8FL Features • • • • • • http://onsemi.com Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses |
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nvmfd5853nlnvmfd5853nlwfaec-q101nvmfd5853nl/d | |
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Contextual Info: NVMFD5853NL Power MOSFET 40 V, 10 mW, 34 A, Dual N−Channel Logic Level, Dual SO−8FL Features • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFD5853NLWF − Wettable Flanks Product |
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nvmfd5853nlnvmfd5853nlwfnvmfd5853nl/d | |
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Contextual Info: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFD5877NLWF − Wettable Flanks Product AEC−Q101 Qualified and PPAP Capable |
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nvmfd5877nlnvmfd5877nlwfnvmfd5877nl/d | |
5853NL
Abstract: 5853
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nvmfd5853nlaec-q101nvmfd5853nl/d5853nl+1 | |
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Contextual Info: NVMFD5852NL Power MOSFET 40 V, 6.9 mW, 44 A, Dual N−Channel Logic Level, Dual SO−8FL Features • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable |
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nvmfd5852nlaec-q101nvmfd5852nl/d | |