500YH Search Results

NPN 600V transistor darlington

Contextual Info: 8 3 6 8 6 0 2 S O L IT R O N D E V I C E S INC. bì D e JJ ä 3 b ä b D E O O O i m i Olitran Devices, inc. NO.: S P E C I F I C A T I O N S T-33-29 BU323A NPN SILICON POWER TYPE: DARLINGTON TRANSISTOR M m UM-B A IIflSS, CASE: TO-3 475 V o l t a g e C o l l e c t o r t o E m i t t e r V c e r s u s j ,R b e = i o o G .

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

Contextual Info: A P T 1 0 M 1 1 LVR A dvanced P o w er Te c h n o lo g y ioov 100a 0.01m POWER M OSV Power MOS V is a new generation of high voltage N-Channei enhancement mode power MOSFETs, This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any

Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5070 COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN • High Collector-Base Voltage (V c b o = 1 5 0 0 V ) • High Speed Switching (tf. max=0.4,“S) ABSOLUTE MAXIMUM RATINGS Symbol Characteristic