500F Search Results

Contextual Info: ABRACON ABMP Series Surface Mount Crystal z: • High Stability • 0.083" Max Hieght • 4ppm Temperature Stability Min. iyp. Max. 10MHz 200MHz Fundimental 3rd O.T. 5th O.T. AT 18pf -10ppm 10ppm 4ppm -4ppm 60°C -10<5c 7pf 300 400 70Q 10ppm 500fiW CORPORATION

BGA153

Abstract: CQ 34 TC55YK1618XB-666 153-bump
Contextual Info: TOSHIBA TC55YK1618XB-666f-500f-400 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 18-BIT SYNCHRONOUS STATIC RAM DESCRIPTION The TC55YK1618XB is a 18,874,368-bit synchronous static random access memory SRAM organized

Contextual Info: PS-3-500F PS-3-500F Three-Way Power Divider/Combiner 1MHz to 500MHz Package: Flatpack The PS-3 series of power dividers are true three-way power dividers as opposed to four-way dividers with one port terminated. Signal fed to the common port is divided equally between the three ports. Three signals

Contextual Info: EL2260C/EL2460C Dual/Quad 130 MHz Current Feedback Amplifiers H GH PERFORMANCE ANALOG INTEGRATED CIRCUITS Features General Description • 130 M H z 3 dB b andw idth Av = + 2 • 180 M H z 3 dB bandw idth (A v = + 1 ) • 0.01% differential gain, R l = 500ft

Contextual Info: MA48709B166 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.500f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage25 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StylePill-B Mounting StyleS

Contextual Info: 5082-3052 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 1.0k @I(R) (A) (Test Condition) r(s) Max.(ê) Series Resist.900 @If (A) Ct{Cj} Nom. (F) Junction Cap.500f Carrier Lifetime (S) @I(F) (test) (A) @I(R) (A) (Test Condition) Maximum Operating Temp (øC)

Contextual Info: MA46610-36 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.500f C1/C2 Min. Capacitance Ratio2.7 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.6.0k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StylePill-C

Contextual Info: MA45225-96 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.500f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage25 Q Factor Min.5.5k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePin

Contextual Info: A A 500 Ft. Conductor: [26AWG 0.16x7 Bare Copper]x8C Insulation: (PP6331 ID: 0.95±0.05)x8C Jacket: PVC NOUL 65P White 8.8±0.2 Orange Black ø240 White Plastic Red Paper Green Yellow ø80 Inner: 105 Brown Blue Brown 2.4±0.2 Sec: A - A 3 500Ft/R. “PE” Foam Wrapped

Contextual Info: A A 500 Ft. Conductor: [26AWG 0.16x7 Bare Copper]x8C Insulation: (PP6331 ID: 0.95±0.05)x8C Jacket: PVC NOUL 65P White 8.8±0.2 Orange Black ø240 White Plastic Red Paper Green Yellow ø80 Inner: 105 Brown Blue Brown 2.4±0.2 Sec: A - A 3 500Ft/R. “PE” Foam Wrapped

Contextual Info: A A 500 Ft. 4.8±0.2 Conductor: [26AWG 0.16x7 Bare Copper]x4C Insulation: (PP6331 ID: 0.95±0.05)x4C Jacket: PVC NOUL 65P Black Red Green Yellow Black ø165 Plastic Paper 2.4±0.2 ø60 Inner: 135 Yellow Sec: A - A 3 500Ft/R. “PE” Foam Wrapped Unit: MM

Contextual Info: EURO QUARTZ XON53 Oscillators 5 x 3.2mm, Wide Operating Temperature 1.25MHz to 60.0MHz FEATURES Femto second integrated phase jitter 500fs typical. Superior phase noise performance Wide operating temperature from -55° to +125°C SPECIFICATION Model Number

RG59 SIAMESE dIRECT BURIAL cable

Abstract: 18AWG PE-75 20AWG
Contextual Info: RG59 SIAMESE WITH 95% COPPER BRAID DIRECT BURIAL SKU: 107-2313/DB/BK Coax Construction DESCRIPTION RG59 Siamese Direct Burial, 20AWG Solid Bare Copper Conductor with 95% Bare Copper Braid, 18AWG (2) Conductors, CL2, CM, Polythylene Jacket, 500ft. FEATURES

triacs

Abstract: BT139-800 equivalent BT137-800 Triacs BTA208 600B BT136-500E Triacs equivalent 500D BTA208-600B equivalent bt134 BT136
Contextual Info: Philips Semiconductors Thyristors and Triacs Index TYPE NUMBER TECHNOLOGY ENVELOPE BR100/03 DIAC SOD27 DO35 BT131-500 BT131-600 FOUR QUADRANT TRIACS SOT54 (TO92) BT132-500D BT132-600D FOUR QUADRANT TRIACS SOT54 (TO92) BT134-500 BT134-500D BT134-500E BT134-500F

MIL-R-94

Abstract: 392M RV6NAYSD104A-P RV6LAY a040mn
Contextual Info: S e r ie s 392 E le c tric a l S p e c if ic a t io n s Series 392 and RV6/392M 0.5 Watt Thick-Film Resistance Range 100S2 to 5 Megohms, linear; 500ÎÎ to 2 Megohms, tapered commercial . 100Î2 to 1 Megohm, linear; 500ft to 1 Megohm, tapered (392M/RV6).

Contextual Info: 74ab34b 00D0flS2 2T1 THIN-FILM PLATINUM TEMPERATURE SENSORS FT SERIES FEATURES • Industry’s lowest cost and widest selection! ■ Precision performance, excellent stability ■ Performance equivalent to wirewound R TD ’s at a lower price ■ Wide resistance range: 100ft, 500ft, 1000ft

Contextual Info: rrunmi New Products TECHNOLOGY LT1464/LT1465 Dual and Quad Micropower, C-Load, Picoampere Bias Current, 1MHz, JFET Input Op Amps F€flTUft€S DCSCRIPTIOn • Input Bias Current: 500fA ■ Supply Current per Amplifier: 200|jA Max ■ SO-8 Package— Standard Pinout

DS75121N

Contextual Info: IO r*. 0 Q & National Semiconductor DS75121 Dual Une Drivers General Description Features The DS75121 is a monolithic dual line driver designed to drive long lengths of coaxial cable, strip line, or twisted pair transmission lines having impedances from 5011 to 500ft. It

Contextual Info: THIN-FILM PLATINUM TEMPERATURE SENSORS PT SERIES FEATURES • Industry’s lowest cost and widest selection! ■ Precision performance, excellent stability ■ Performance equivalent to wirewound R TD ’s at a lower price ■ Wide resistance range: 100ft, 500ft, 1000ft

Contextual Info: 4022-12-01 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.500f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage24 Q Factor Min. f(co) Min. (Hz) Cut-off freq.140G P(D) Max. (W)4.0 Semiconductor MaterialSilicon Package StyleN/A

Contextual Info: AS11B10 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.500f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage10 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-B Mounting StyleS

Contextual Info: 4022-13-00 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.500f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage24 Q Factor Min. f(co) Min. (Hz) Cut-off freq.160G P(D) Max. (W)4.0 Semiconductor MaterialSilicon Package StyleN/A

507-4757-3331-500

Abstract: 50748613332500F 507 dialight
Contextual Info: DIALIGHT PART NUMBER COLOR 507-4756-3331-500F RED 3.6 VDC FIG. 1 507-4756-3731-500F RED 3.6 VDC FIG. 2 VOLTAGE REV LENS 507-4757-3331-500F RED 5 VDC FIG. 1 507-4757-3731-500F RED 5 VDC FIG. 2 507-4759-3331-500F RED 10 VDC FIG. 1 507-4759-3731-500F RED 10 VDC

Contextual Info: Special Application Bellen fgj] 209-1272 500ft W m ' *D igital » • “Audio „ k, Cables While digital audio has been around for over 20 years, only recently has there been an effort to standardize specifications. The Audio Engineering Society U.S. and the European Broad­