5000V RECTIFIER DIODES Search Results

MRS25000

Abstract: MR 05 5000 MRF transistor MRFS30000 MRF30000 MRP5000 MRS2500 MR10000 MR2500 MR5000
Contextual Info: HIGH VOLTAGE AXIAL LEAD FLAT PACK RECTIFIER – MR SERIES .25 TYP .12 R 1.38 MAX .17 DIODES L .20 (TYP) Positive Center Tap 1.2A, 5000V/LEG MRP5000 Negative Center Tap (N) (IFAVM of Doubler is IFAVM x 0.5) Fast Recovery Doubler 1.0A, 7500V/LEG MRFSD7500

MRS25000

Abstract: MR10000 MR12500 MR2500 MR5000 MR7500 MRFSD7500 MRP5000 MRSN15000 MR000
Contextual Info: MR-HIGH VOLTAGE RECTIFIER .25 TYP .12 R 1.38 MAX .17 DIODES L .20 (TYP) Positive Center Tap 1.2A, 5000V/LEG MRP5000 Negative Center Tap (N) (IFAVM of Doubler is IFAVM x 0.5) Fast Recovery Doubler 1.0A, 7500V/LEG MRFSD7500 Repetitive Peak Avg. Forward Max. Forward

PIV RATING 25 V DIODE WITH 2a OUTPUT CURRENT

Abstract: PIV RATING 14 V DIODE with output current 2A PIV RATING 14 V DIODE WITH 2A OUTPUT CURRENT
Contextual Info: 673, 676 SERIES RECTIFIER ASSEMBLIES 1200-5000V Single Phase Bridges, High Voltage 0.125-0.6 Amp, Standard and Fast Recovery FE A T U R E S DESCRIPTIO N • • • • • • • These miniature molded high-voltage single phase bridges are designed tor universal

SCDA6

Abstract: semtech rectifier bridge SCH25000 rectifier 400V 5A Full-Wave Bridge Rectifier SCBAR4F sdhd5k SC3BK4F SCDA4F 1N5415
Contextual Info: 2008 Axial Rectifiers PART NUMBERS DESCRIPTION 1N5415 through 1N5420 Fast recovery axial rectifier, 50V - 600V, Io=4.5A 1N5550 through 1N5554 1N5614, 1N5616, 1N5618, 1N5620, 1N5622 Standard recovery axial rectifier, 200V - 1000V, Io=5.0A Standard recovery axial rectifier, 200V - 1000V, Io=2.0A

5000V rectifier diodes

Abstract: R820
Contextual Info: R820_07XX GENERAL PURPOSE RECTIFIER DIODE Powerex, Inc., 173 Pavilion Lane, Youngwood, PA 15697-1800 www.pwrx.com 724 925-7272 690 Amperes 5200 Volts Powerex General Purpose Rectifier Diodes are designed with high blocking voltage capability and low forward voltage drop to minimize

Contextual Info: RECTIFIER ASSEMBLIES 673, 676 SERIES 1 2 0 0 - 5 0 0 0 V Single Phase Bridges, High Voltage 0.125-0.6 Amp, Standard and Fast Recovery FEA TU RES D E S C R IP T IO N • • • • • • • These miniature molded high-voltage single phase bridges are designed for universal

5000V rectifier diodes

Abstract: A 673 semiconductor
Contextual Info: MICROSEMI CORP/ UATERTOUN SOE D M 1 3 4 7 ^ 3 QQlSSbS 151 BI UNIT RECTIFIER ASSEMBLIES Single Phase Bridges, High Voltage 0.125-0.6 Amp, Standard and Fast Recovery . / DESCRIPTION These miniature molded high-voltage single phase bridges are designed for universal

TVR diode

Abstract: diode tvr 10 g Zener Diode Glass 50v Zener Diodes 300v s5688 diode 50000v diode identification
Contextual Info: 1. IDENTIFICATION SYSTEM 1.1 Z ener D iod es Example 1: U 1 Example 3: Z B 270 ©© © © © § Example 4: U 1 N © © D L 44 A ©©©© © © T . . . . . S (4). . . © . . R ectifiers S5688 J © . . . Specific application diode. (TVR: for televisions. TFR: for strobes.)

Unitrode MARKING

Contextual Info: RECTIFIER ASSEMBLIES 673, 676 SERIES 1 2 0 0 -5 0 0 0 V Single Phase Bridges, High Voltage 0.125-0.6 Amp, Standard and Fast Recovery FEATURES DESCRIPTION • • • • • • • These miniature molded high-voltage single phase bridges are designed for universal

sharp laser diodes

Abstract: OC100G
Contextual Info: Table of Contents PAGE SURFACE MOUNT MOLDED DIODES 30ns 420mA, 2000V . 08 - 09 70ns 50mA - 250mA, 150mA - 500mA, 2000V - 5000V .

SICH-1000

Contextual Info: SICF2500 SICF5000 SICF7500 tSENSITRON SEMICONDUCTOR SICF10000 SICF12500 TECHNICAL DATA DATA SHEET 960, REV. - HIGH VOLTAGE, HIGH DENSITY, FAST RECOVERY LEADED INDUSTRIAL GRADE SILICON RECTIFIER ASSEMBLY FEATURES: • Low reverse recovery time • Low forward voltage drop

A 221 542 04

Abstract: SCH25000
Contextual Info: SCF2500 SCF5000 SCF7500 tSENSITRON SEMICONDUCTOR SCF10000 SCF12500 TECHNICAL DATA DATA SHEET 540, REV. - HIGH VOLTAGE, HIGH DENSITY, FAST RECOVERY LEADED SILICON RECTIFIER ASSEMBY FEATURES: • Low reverse recovery time • Low forward voltage drop • High thermal shock resistance

ESD TVS

Abstract: transient voltage suppressor diode TVS Diode cross design ideas SMDA05 AN966 5000V rectifier diodes
Contextual Info: Surging Ideas TVS Diode Application Note AN96-6 TEL:805-498-2111 FAX:805-498-3804 TRANSIENT PROTECTION FOR DATA AND I/O INTERFACES by William Russell Transient voltages are a fact of life in electronic equipment. With semiconductor processing breakthroughs allowing increasingly more complex

Contextual Info: AN96-6 TEL: 805-498-2111 TRANSIENT PROTECTION FOR DATA AND I/O INTERFACES b y W illiam Russell Transient voltages are a fact of life in electronic equipment. With semiconductor processing breakthroughs allowing increasingly more complex devices, equipment is more sensitive than ever. It is

wiring diagram audio amplifier ic 6283

Abstract: cd 6283 ic wiring diagram RCR42G 520-587900O-00C311 CM06FD Cherokee International Power sp215 rockwell collins 634 EIMAC Application Bulletin rcr20g TB101
Contextual Info: Collins instruction book Collins Government Telecommunications Group 30S-1 RF Linear Amplifier 520-587900O-00C311 12th Edition, 15 March 1976 * Rockwell International Collins instruction book 30S-1 RF Linear Amplifier Collins Government Telecommunications Group

syntron rectifier

Abstract: 2CL2FP SM3F HGUF10 WESTINGHOUSE RECTIFIERS ct 4a05 4a05 Syntron syntron diode 2CL106
Contextual Info: B D O O O N TH O T C R O EM P Y O VE Manufacturers of • ■ ■ ■ ■ CAN’T FIND WHAT YOU NEED? CALL US. CUSTOM DESIGN IS OUR SPECIALTY. HIGH VOLTAGE DIODES MOVS TVSS DEVICES SELENIUM SUPPRESSORS SILICON CARBIDE SUPPRESSORS ■ HIGH VOLTAGE HIGH CURRENT ASSEMBLIES

4A05 diode

Abstract: ct 4a05 4a05 equivalent components of diode her208 diode 4a05 SP5LFG SM3FG 2CL2FP HVW3 diode SM3F
Contextual Info: HIGH VOLTAGE LOW CURRENT RECTIFIERS – NV, G SERIES FIGURE 24 NV•FP Series FIGURE 0.080 Lead Diameter 0.020 0.12 Max. FIGURE 2 G•FS Series G•FG Series 1” Min. FIGURE 4 0.120 Lead Diameter 0.024 1” Min. D Lead Diameter 0.023 1” Min. 3 L Max. G•GE & G•PE Series

mdd 2605

Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
Contextual Info: 755 Technical portal and online community for Design Engineers - www.element-14.com Optoelectronics, Solid State Illumination & Displays Page Alphanumeric LCD Modules . . . . . . . . . . . . . . . . . 903 Alphanumeric LED Displays . . . . . . . . . . . . . . . . . 900

220v 2a diode bridge

Abstract: L7581AAE ISL5571A ISL5571AIB TB363 TB379 TISPL758LF3D CPCL7581A TISPL758L
Contextual Info: ISL5571A Data Sheet January 2004 Access High Voltage Switch Features The ISL5571A is a solid state device designed to replace the electromechanical relay used on Subscriber Line Cards. The device contains two Line Break MOSFET switches, one Ring Return MOSFET switch and one Ring Access SCR switch.

220v 2a diode bridge

Abstract: L7581AAE 28V DC supply ring generator ISL5571A ISL5571AIB TB363 TB379 TISPL758LF3D transistor scr voltage drop circuit from 220V to 10V
Contextual Info: ISL5571A Data Sheet June 2002 Access High Voltage Switch Features The ISL5571A is a solid state device designed to replace the electromechanical relay used on Subscriber Line Cards. The device contains two Line Break MOSFET switches, one Ring Return MOSFET switch and one Ring Access SCR switch.

28V DC supply ring generator

Abstract: L7581AAE 220v 2a diode bridge ISL5571A ISL5571AIB ISL5571AIBZ TB363 TB379 TISPL758LF3D
Contextual Info: ISL5571A Data Sheet July 2004 FN4920.5 Access High Voltage Switch Features The ISL5571A is a solid state device designed to replace the electromechanical relay used on Subscriber Line Cards. The device contains two Line Break MOSFET switches, one Ring Return MOSFET switch and one Ring Access SCR switch.

Contextual Info: ISL5571A Data Sheet July 2004 FN4920.5 Access High Voltage Switch Features The ISL5571A is a solid state device designed to replace the electromechanical relay used on Subscriber Line Cards. The device contains two Line Break MOSFET switches, one Ring Return MOSFET switch and one Ring Access SCR switch.

pnp phototransistor

Abstract: LASCR zero voltage switching of a tungsten lam
Contextual Info: OPTOELECTRONICS THEORY OPTOELECTRONIC DEVICES T h is sectio n d e scrib es th e basic se m ic o n d u cto r devices utilized in o p to electro n ics, th e ir p rin c ip le s o f o p e ra tio n a n d th e ir circuit fu n c tio n s in o rd e r to give th e circuit d e sig n e r an

LASCR

Contextual Info: OPTOELECTRONICS THEORY OPTOELECTRONIC DEVICES T h is sectio n d e sc rib e s th e basic se m ic o n d u c to r devices utilized in o p to ele ctro n ic s, th e ir p rin c ip le s o f o p e ra tio n a n d th e ir circuit fu n c tio n s in o rd e r to give th e circuit d e sig n e r a n