5000 RMS MOSFET Search Results

hp 3101

Abstract: HP optocoupler 3101 a 3101 OPTOCOUPLER HCPL-3100 hp 3101 pin hp 3100 ic hp 3101 pin diagram E55361 HCPL3101 HCPL-3101
Contextual Info: H Power MOSFET/IGBT Gate Drive Optocouplers Technical Data HCPL-3100 HCPL-3101 Features Description • High Output Current IO1 and IO2 0.4 A Peak, 0.1 A Continuous • 1.5 kV/ µs Minimum Common Mode Rejection (CMR) at VCM = 600 V • Wide Operating VCC Range

a 3101 OPTOCOUPLER

Abstract: IC A 3101 HCPL-3100 HCPL3101 a 3101 HCPL-3101 V02H 2 anode igbt inverter circuit diagram E55361 5965-3583E
Contextual Info: Power MOSFET/IGBT Gate Drive Optocouplers Technical Data HCPL-3100 HCPL-3101 Features Description • High Output Current IO1 and IO2 0.4 A Peak, 0.1 A Continuous • 1.5 kV/ µs Minimum Common Mode Rejection (CMR) at VCM = 600 V • Wide Operating VCC Range

HCPL-3100

Abstract: a 3101 OPTOCOUPLER E55361 HCPL3101 HCPL-3101 V02H Q23-4
Contextual Info: Power MOSFET/IGBT Gate Drive Optocouplers Technical Data HCPL-3100 HCPL-3101 Features Description • High Output Current IO1 and IO2 0.4 A Peak, 0.1 A Continuous • 1.5 kV/ µs Minimum Common Mode Rejection (CMR) at VCM = 600 V • Wide Operating VCC Range

Contextual Info: TOSHIBA PHOTO RELAY TLP595B Unit in mm Telecommunication Data Acquisition Measurement Instrumentation The Toshiba TLP595B consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a six lead plastic DIP package. The

Contextual Info: TOSHIBA PHOTO RELAY TLP596G Unit in mm Telecommunication Data Acquisition Measurement Instrumentation The Toshiba TLP596G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a six lead plastic DIP package. The

Contextual Info: AME AME5288 6A Peak, 300KHz ~ 1.4MHz Synchronous Rectified Step-Down Converter n General Description n Applications l TV The AME5288 is a Synchronous Rectified Step-Down Converter with internal power MOSFETs. It achieves 6A peak continous output current over a wide switching frequency range with excellent load and line regulation.

TLP595B

Abstract: E67349
Contextual Info: TOSHIBA PHOTO RELAY TLP595B Unit in mm Telecommunication Data Acquisition Measurement Instrumentation The Toshiba TLP595B consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a six lead plastic DIP package. The

"Photo Relay"

Abstract: toshiba tape and reel TLP595G E67349
Contextual Info: TOSHIBA PHOTO RELAY TLP595G Unit in mm Telecommunication Data Acquisition Measurement Instrumentation The Toshiba TLP595G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a six lead plastic DIP package. The

TLP596G

Abstract: E67349 "Photo Relay" toshiba tape and reel
Contextual Info: TOSHIBA PHOTO RELAY TLP596G Unit in mm Telecommunication Data Acquisition Measurement Instrumentation The Toshiba TLP596G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a six lead plastic DIP package. The

TLP595A

Abstract: E67349 PF 1014
Contextual Info: TOSHIBA PHOTO RELAY TLP595A Unit in mm Telecommunication Data Acquisition Measurement Instrumentation The Toshiba TLP595A consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a six lead plastic DIP package. The

TLP798GA

Abstract: BC150 5000 rms mosfet BA100
Contextual Info: TLP798GA 東芝フォトカプラ フォトリレー TLP798GA ○ 電子交換機 ○ 多機能電話機 ○ コードレスホン ○ 計測機器 単位: mm TLP798GA はフォト MOSFET と赤外発光ダイオードを光結合させた、 6 ピン DIP のフォトリレーです。

Contextual Info: Advanced Technical Information IXFN 340N06 HiPerFETTM Power MOSFETs Single Die MOSFET D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 60 V VDGR TJ = 25°C to 150°C; RGS = 1 MW

Contextual Info: Advanced Technical Information IXFN 340N06 HiPerFETTM Power MOSFETs Single Die MOSFET D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 60 V VDGR TJ = 25°C to 150°C; RGS = 1 MW

FOD3180

Abstract: PWM IC 6-PIN DIP optocoupler 4-pin dip open collector TIL117-M equivalent hcpl3700 74OL6000M FODM121 FOD3181 H11F1M zener diode reference guide
Contextual Info: Optocoupler Selection Guide Introduction Fairchild Semiconductor is a leader in the design and production of optocouplers, offering a broad range of package platforms, incorporating various combinations of input and output configurations. We offer simple function optocouplers for low-bandwidth/general switching applications, high performance optocouplers for high bandwidth/high-gain applications, highvoltage optocouplers for AC load switching applications, and other complex functions that provide unique performance

Optocoupler with triac

Abstract: Optocoupler with triac circuits 380 volt 50 hz triac high dv/dt thyristors optocoupler triac TRIAC 112 TRIAC inductive IL4208 OPTOCOUPLER Non-zero voltage detectors TRIAC FT 12
Contextual Info: IL4208 800 V TRIAC DRIVER OPTOCOUPLER FEATURES • High Input Sensitivity, IFT=2 mA • Blocking Voltage, 800 V • Isolation Test Voltage 5300 VACRMS • 300 mA On-state Current • High Static dv/dt 10,000 V/Ms • Inverse Parallel SCRs Provide • Commutating dv/dt >2K V/µ s

3 phase inverter schematic diagram

Abstract: a 3101 a 3101 OPTOCOUPLER HCPL-3100 3101 c1 IC A 3101 3 phase inverters circuit diagram igbt hcpl a 34 1/3 phase inverters circuit diagram Dc to 3 Phase Inverters
Contextual Info: HCPL-3100, HCPL-3101 Power MOSFET/IGBT Gate Drive Optocouplers Data Sheet Description Features The HCPL-3100/3101 consists of an LED* optically coupled to an integrated circuit with a power output stage. These optocouplers are suited for driving power MOSFETs and IGBTs used in motor control

Contextual Info: TOSHIBA PHOTO RELAY TLP595G Unit in mm Telecommunication Data Acquisition Measurement Instrumentation The Toshiba TLP595G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a six lead plastic DIP package. The

it300

Abstract: optotriac IL4216 IL4217 IL4218 optotriac IL4218 OPTOtriac zero crossing
Contextual Info: 600 V IL4216 700 V IL4217 800 V IL4218 Triac Optocoupler FEATURES • High Input Sensitivity IFT=1.3 mA • 600/700/800 V Blocking Voltage • 300 mA On-State Current • High Static dv/dt 10,000 V/ µsec., typical • Inverse Parallel SCRs Provide Commutating

SCR opto DRIVER

Abstract: IL4216 siemens relays snubber optotriac optotriac IL4218 siemens RC snubber OPTO TRIAC il4218 IL4217 IL4218 siemens triac
Contextual Info: IL4216 700 V IL4217 800 V IL4218 600 V Triac Driver Optocoupler FEATURES • High Input Sensitivity IFT=1.3 mA • 600/700/800 V Blocking Voltage • 300 mA On-State Current • High Static dv/dt 10,000 V/µsec., typical • Inverse Parallel SCRs Provide Commutating

optotriac

Abstract: SCR opto DRIVER IL421
Contextual Info: 600V IL4216 700 V IL4217 800V IL4218 Infineon Triac Optocoupler FEATURES High Input Sensitivity mA 600/700/800 V Blocking Voltage 300 mA On-State Current High Static dv/dt 10,000 V/|asec., typical Inverse Parallel SCRs Provide Commutating dv/dt >10 kV/ j.sec

51cn

Abstract: BLRM
Contextual Info: SIEMENS IL4208 800 VTriac Driver Optocoupter FEATURES High Input Sensitivity, mA Blocking Voltaga, BOOV isolation Test Voltage 5300 VACrms 300 mA On-state Current High Static dv/dt 10,000 V/M t Inverse Parallel SCRs Provide Commutating dv/dt>2KV4i* Vary Low Leakage <10 iA

triac optocoupler

Abstract: Optocoupler with triac IL4208 IL420 VIO-500 triac f10
Contextual Info: 600 V IL420 800 V IL4208 Triac Optocoupler FEATURES • High Input Sensitivity IFT=2.0 mA • 600/800 V Blocking Voltage • 300 mA On-State Current • High Static dv/dt 10 kV/µs • Inverse Parallel SCRs Provide Commutating dv/dt >10 kV/µs • Very Low Leakage <10 µA

Optocoupler with triac

Abstract: zero voltage detector using SCRs optocoupler triac IL420 parallel triac TRIAC 112 TRIAC FT 12 it300 zero crossing detector using SCRs
Contextual Info: IL420 600 V TRIAC DRIVER OPTOCOUPLER FEATURES • High Input Sensitivity IFT=2 mA • Blocking Voltage, 600 V • 300 mA On-State Current • High Static dv/dt 10,000 V/µs • Inverse Parallel SCRs Provide Commutating dv/dt >2K V/µs • Very Low Leakage <10 µA

IL420

Abstract: IL4208 optocoupler triac infineon IL420 siemens siemens triac
Contextual Info: IL420 800 V IL4208 600 V Triac Driver Optocoupler FEATURES • High Input Sensitivity IFT=2.0 mA • 600/800 V Blocking Voltage • 300 mA On-State Current • High Static dv/dt 10 kV/µs • Inverse Parallel SCRs Provide Commutating dv/dt >10 kV/µs • Very Low Leakage <10 µA