500 WATT AMPLIFIER Search Results

TP105

Abstract: TP-105 8791 tube Jettron Product
Contextual Info: Return To Product Page 8791 Power Tube Linear Beam Power Amplifier Tube • Ruggedized, Reliable • 80 Watt Average-Noise-Power Output with White Noise Loading • 250 Watt Power Output in VHF-Linear Translator Service • 500 Watt PEP Output in SSB Suppressed-Carrier

Contextual Info: Whnl H E W L E T T mUnM P a c k a r d Avantek Products High Efficiency, Class A, 1 Watt Amplifier 10 to 500 MHz Technical Data CTO-565 Features Description • 1 Watt Output Power • Low Current: 450 mA The CTO-565 is a high gain, high efficiency, Class A 1 Watt ampli­

300g quadrature

Abstract: 300G stripline hybrid
Contextual Info: QJE-3-.300G 90 POWER DIVIDER / COMBINER 100 to 500 MHz / 500 Watt CW Capacity / Low Insertion Loss / Excellent Ampli. Bal. / Filmbrid Pkg PRINCIPAL SPECIFICATIONS Model Number Frequency Range, MHz Performance Bandwidth, MHz Amplitude Balance, dB, Max. Phase

Contextual Info: data sheet 8 1992 UTO/UTC-565 High Efficiency, Class A, 1 Watt Amplifier 10 to 500 MHz June, 1991 0AVANTEK Features Applications • • • • • • • • • • • • • 1 Watt Output Power Low Current: 450 mA High Gain: 19.5 dB Typ 18 Volt Bias

500 watt amplifier

Abstract: DCS1800 SM0520-36 SM0520-36H 500 watt RF amplifier GHz
Contextual Info: Model SM0520-36/36H 500-2000 MHz 4 Watt Linear Power Amplifier FOR LAB & WIDEBAND APPLICATIONS Model SM0520-36/36H is a 500 to 2000 MHz solid state GaAs FET amplifier designed for multi-purpose use in multiple wireless and military markets. With 1.5 GHz of bandwidth, this small amplifier

Contextual Info: Model SM0520-36/36H 500-2000 MHz 4 Watt Linear Power Amplifier FOR LAB & WIDEBAND APPLICATIONS Model SM0520-36/36H is a 500 to 2000 MHz solid state GaAs FET amplifier designed for multi-purpose use in multiple wireless and military markets. With 1.5 GHz of bandwidth, this small amplifier

DDD131

Abstract: ZHL-1000-3W 44174
Contextual Info: Coaxial High Power Amplifier 50Ω 3W ZHL-1000-3W 500 to 1000 MHz Features • High power, 3 Watt • Wideband, 500 to 1000 MHz • High power output, +35dBm Min. • High IP3, +45 dBm typ. • High gain, 43 dB typ. • Protected by US Patent, 6,943,629 Model No.

ACRIAN

Abstract: acrian inc
Contextual Info: 0182998 ACRIAN INC T7 ACRIAN INC rJm UStk Krai JS l M l ¡2 S I H m P ! S r . n i L h Wj¡¡¡ h >« Ü m&Z I 12 WATT - 28 VOLT 100-500 MHz The 0105-12 is a 12 watt balanced transistor designed for broadband use in the 100-500 M Hz frequency band. It may be operated in Class A, AB or C. Gold

Avantek* UTO

Contextual Info: W hoI H E W L E T T 1"HM P A C K A R D Avantek Products High Efficiency, Class A, 1 Watt Amplifier 10 to 500 MHz Technical Data UTO/UTC-565 Features Description Pin Configuration • • • • • The UTO/UTC-565 is a high gain, high efficiency, Class A, 1 watt

ZHL-5W-1 Mini-Circuits

Abstract: 4576 5w ZHL-5W-1X DDD131
Contextual Info: Coaxial High Power Amplifier 50Ω 5W ZHL-5W-1 5 to 500 MHz Features • High power, 5 Watt • Wideband, 5 to 500 MHz • High power output, +37dBm min. • High gain, 40 dB Min. • Low noise figure, 4 dB typ. • High IP3, +49 dBm typ. Model No. Case Style

DDD131

Contextual Info: Coaxial High Power Amplifier 50Ω 5W ZHL-5W-1 5 to 500 MHz Features • High power, 5 Watt • Wideband, 5 to 500 MHz • High power output, +37dBm min. • High gain, 40 dB Min. • Low noise figure, 4 dB typ. • High IP3, +49 dBm typ. Model No. Case Style

Contextual Info: SMA High Power Limiter, 100 Watt Peak Power, 10 ns Recovery, 10 dBm Flat Leakage, 500 MHz to 18 GHz TECHNICAL DATA SHEET PE80L1000 The PE80L1000 is a High Power Limiter that operates from 0.5 GHz to 18 GHz. Features • • • • • High Speed 1 Watt Limit

PTFA041501E

Abstract: BCP56 LM7805 PTFA041501F R250 LM7805 voltage regulator packages
Contextual Info: PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications.

2N5177

Contextual Info: SGI Silicon Group Inc. 2N5177 Silicon NPN high power UHF transistor 2N5177 is designed for power amplifier, frequency multiplier or auto-oscillator applications in industrial equipment class C . ^Output power: 20 watt (typ) 100 - 500 MHz Frequency range:

SF-11N

Abstract: SF-31N FXR SF-31N BNC T connectors INSERTION LOSS Microlab FXR QQ-S-365 SF-10B SF-10F SF-10N SF-10T
Contextual Info: MICROLAB/FXR Double Slug Tuners SF series ♦ ♦ ♦ ♦ ♦ ♦ Dual Impedance Transformer 300 to 5,000 MHz Ideal for Amplifier Stability Testing Adjustment Locking Long Life Beryllium Copper Contacts 500 Watt Average Power Rating N Connectors Standard Noise Free Operation

300 watts amplifier circuit diagram

Abstract: 400 Watt Audio amplifier IC 400 watts amplifier circuit diagram electrical power system circuits boomer 281 AN-450 LM4861 LM4861M M08A Audio Power Amplifiers capacitor 2u2 250V
Contextual Info: August 1994 Semiconductor BOOITlGr Audio Power Amplifier Series 1/ 2 Watt Audio Power Amplifier with Shutdown Mode L M 4861 General Description Key Specifications The LM4861 is a bridge-connected audio power amplifier capable of delivering 500 mW of continuous average power

Contextual Info: SURFACE-MOUNT D71Y.8T1 PNP POWER TRANSISTORS -30 VOLTS -800 mAMP, 500 mWATTS Designed for audio frequency amplifier applications. Features: • High DC current gain: hFE = 100 ~ 320 • Suitable for output stage of 1-Watt amplifier • Pd =1 ~ 2W Mounted on ceramic substrate

102k1k

Contextual Info: One Watt Amplifier Transistor MPS6717 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 80 Vdc Collector −Base Voltage VCBO 80 Vdc Emitter −Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C

D70Y.8T1

Contextual Info: SURFACE-MOUNT D70Y.8T1 NPN POW ER TRANSISTORS 30 VOLTS 800 mAMP, 500 mWATTS Designed for audio frequency amplifier applications. Features: • High DC current: hFE = 100 — 320 • Suitable for output stage of 1-Watt amplifier • PD=1 ~ 2W Mounted on ceramic substrate

MAAM-007502-CPA512

Abstract: MAAM-007502-SPA512 PA512 200-IP2
Contextual Info: Cascadable Amplifier 10 to 500 MHz PA512 / SPA512 V1 Features • • • • Product Image HIGH POWER OUTPUT: +27.5 dBm TYP. HIGH THIRD ORDER I.P.: +39 DBm (TYP.) MODERTE NOISE FIGURE: 5.2 dB (TYP.) GaAs FET AMPLIFIER Description The PA512 0.5 watt RF power amplifier is a discrete

amplifier 50 50W

Abstract: BT1165 ZHL-50W-52 ZHL-30W-50W-52X
Contextual Info: Coaxial High Power Amplifier 50Ω 50W ZHL-50W-52 50 to 500 MHz Features • High power, 50 Watt • Excellent IP3, +55 dBm typ. • Class A amplifier, usable up to 75W • Shuts off when base plate temperature exceeds +100°C • Good gain flatness, ±1.0 dB typ.

iso 5459

Abstract: ZHL-50W-52 amplifier 50 50W BT1165
Contextual Info: Coaxial High Power Amplifier 50Ω 50W ZHL-50W-52 50 to 500 MHz Features • High power, 50 Watt • Excellent IP3, +55 dBm typ. • Class A amplifier, usable up to 75W • Shuts off when base plate temperature exceeds +100°C • Good gain flatness, ±1.0 dB typ.

2N4427

Abstract: 1300 NPN MRF553 MRF555 MRF559 MRF607 2N3866A 2N5179 2N6255 MRF4427
Contextual Info: 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 1. Emitter 2. Base 3. Collector 500 MHz Current-Gain Bandwidth Product @ 50mA TO-39

BT116

Abstract: BT1165 fm amplifier 100w rf amplifier 100w ZHL-100W-52
Contextual Info: Coaxial High Power Amplifier 50Ω 100W ZHL-100W-52 50 to 500 MHz Features • High power, 100 Watt • Excellent IP3, +57 dBm typ. • Class A amplifier, usable up to 100W. • No damage with an open or short output load under full CW output power1 • Shuts off when base plate temperature exceeds +100°C