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Contextual Info: SPIRIT1 Low data rate, low power sub-1GHZ transceiver Datasheet — preliminary data Features • Frequency bands: 150-174 MHz, 300-348 MHz, 387-470 MHz, 779-956 MHz ■ Modulation schemes: 2-FSK, GFSK, MSK, GMSK, OOK, and ASK ■ Air data rate from 1 to 500 kbps
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spirit1
Abstract: EN-13757 ook deMODULATOR ghz EN-13757-4 ST 9918 EN137574 wireless encrypt RCF up 2201 receiver pll 169mhz sk 8060
Contextual Info: SPIRIT1 Low data rate, low power sub-1GHZ transceiver Datasheet — preliminary data Features • Frequency bands: 150-174 MHz, 300-348 MHz, 387-470 MHz, 779-956 MHz ■ Modulation schemes: 2-FSK, GFSK, MSK, GMSK, OOK, and ASK ■ Air data rate from 1 to 500 kbps
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spirit1en-13757ook demodulator ghzen-13757-4+6st 9918en137574wireless encryptrcf up 2201receiver pll 169mhzsk 8060
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802830
Abstract: DKPI 24 Vdc 801953 Weidmuller 824204 dkt4 500 DKZ 600 DKZ 801863 DKR 801961 818404 a 2212 opto
Contextual Info: Produktübersicht Minikoppler 6 Digitale Signalverarbeitung 6 6 6 W Ein- und Ausgaben Relaiskoppler DKR Seite 6-6/6 bis 6/7 Ein- und Ausgaben Optokoppler DKO Seite 6-6/8 bis 6/12 SO-Impulsgeber Optokoppler DKO Seite 6-6/13 6 Schaltverstärker Optokoppler DKO
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95/100u135/155u10-poliges802830+9dkpi 24 vdc 801953 weidmuller824204dkt4500 dkz600 dkz801863dkr 801961818404a 2212 opto
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500 DKZ
Abstract: TFK 4 314 valvo TELEFUNKEN* U 111 B str w 6052 tfk 1007 tfk 014 Schwingquarz Telefunken TFK S 417 T valvo transistoren
Contextual Info: TELEPO RT VI ein Sprechfunkgerät für das 80-, 100- und 150/160-MHz-Band Kanalraster 50, 25 und 20 kHz Beschreibung A H /B s -V 300 657/1 Teile 1, 2, 3, 4, 5, 6 Nachdruck, auch auszugsweise, verboten 765 kn Mo Technische W eiterentwicklung Vorbehalten Inhalt
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150/160-mhz-band500 dkztfk 4 314valvo+7telefunken* u 111 bstr w 6052tfk 1007tfk 014schwingquarz telefunkentfk s 417 tvalvo transistoren
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VARTA L2 400 640
Abstract: VARTA 170 dk VARTA 500 RST VARTA 250 dk VARTA 100 RST VARTA 100 DKO Battery VARTA 60 DKO Battery VARTA 60 dk VARTA L2 400 varta 225 dkz
Contextual Info: Portable and Micro Batteries Type Range 40 107 ex/0589 \ Standard — Series RS for Normal Rates of Discharge up to 6 CA 60 l10 Type Order-No. for bare cell in shrink sleave Nominal capacity at 0.2 CA Discharge current 0.2 CA Charge current 14 hours RS*
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ex/0589d-3000varta l2 400 640varta 170 dk+8varta 500 rstvarta 250 dkvarta 100 rstvarta 100 dko batteryvarta 60 dko batteryvarta 60 dkvarta l2 400varta 225 dkz
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feme relais
Abstract: Rapa relay 12vdc Rapa Relais gruner RELAY 275 gruner RELAY haller Relays SDS Relais ZETTLER AZ haller relais feme relay
Contextual Info: Relay Coupler 58 Relay Coupler Contact material Properties Application Fine silver AG 99 % - inexpensive - average tendency to weld and average resistance to burn-off - subject to corrosion in sulphurous atmosphere - high mechanical stability - low tendency to weld
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feme relaisrapa relay 12vdcrapa relaisgruner relay 275+6gruner relayhaller relayssds relaiszettler azhaller relaisfeme relay
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WEW-35-2
Contextual Info: Datasheet IDC-Hybrid terminals with IDC and screw connection IDK 1.5N/ZB NEW Weidmuller's latest insulation displacement IDC hybrid terminal, IDK 1.5N/ZB, offers a combination of IDC and screw clamp technology in a compact package, which provides OEMs the best
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Contextual Info: Data Sheet • Cable connectors IDC-Hybrid terminals with IDC and screw connection IDK 1.5N/ZB NEW Weidmüller's latest variant, the IDC hybrid terminal IDK 1.5N/ZB, offers a combination of IDC and screw connections in an extremely compact footprint. Your production profits from all the
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Contextual Info: HY5PS12421 L F HY5PS12821(L)F HY5PS121621(L)F 512Mb DDR2 SDRAM HY5PS12421(L)F HY5PS12821(L)F HY5PS121621(L)F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.
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vm 256MB DDR 400
Abstract: 128 MB DDR2 SDRAM HYB18T256800AC-5 DDR2-400 HYB18T256160AC-3 HYB18T256160AC-5 HYB18T256400AC HYB18T256400AC-3 HYB18T256400AC-5 HYB18T256800AC
Contextual Info: D a t a S h e e t , V0 . 8 , A u g . 2 0 0 3 HYB18T256400AC HYB18T256800AC HYB18T256160AC 2 5 6 M b i t D D R 2 SD R A M Memory Products N e v e r s t o p t h i n k i n g . Edition 2003-08-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany
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DDR2-400
Abstract: HYB18T512160AC-5 HYB18T512400AC HYB18T512400AC-5 HYB18T512800AC HYB18T512800AC-5 600 DKZ
Contextual Info: D a t a S h e e t , V 1. 0 8 , A u g . 2 0 0 3 HYB18T512400AC HYB18T512800AC HYB18T512160AC 5 1 2 M b i t D D R 2 SD R A M Memory Products N e v e r s t o p t h i n k i n g . Edition 2003-08-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
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HYB18T256400AF37
Abstract: 600 DKZ
Contextual Info: . HYB18T256400/800/160AF 256Mb DDR2 SDRAM PRELIMINARY DATASHEET Rev. 0.6 4.03 Features • High Performance: • Write Latency = Read Latency -1 Speed Sorts -5 DDR2 -400 -3.7 DDR2 -533 -3 DDR2 -667 Units Bin (CL-trcd-trp) 3-3-3 4-4-4 4-4-4 tck max. Clock
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HYB18T512400AF5
Abstract: 600 DKZ
Contextual Info: . HYB18T512400/800/160AF 512Mb DDR2 SDRAM PRELIMINARY DATASHEET Rev. 1.05 4.03 Features • High Performance: • Write Latency = Read Latency -1 -5 DDR2 -400 -3.7 DDR2 -533 -3 DDR2 -667 Units 3-3-3 4-4-4 4-4-4 tck max. Clock Frequency 200 266 333 MHz Data Rate
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1G DDR2 128 x 8
Abstract: DDR2-400 DDR2-533 DDR2-667 HYB18T256160A HYB18T256160AF HYB18T256400AF HYB18T256800AF ddr infineon hyb vm 256MB DDR 400
Contextual Info: D a t a S he et , V 1. 0 2 , M a y 2 0 04 HYB18T256400AF HYB18T256800AF HYB18T256160AF 256 Mbit DDR2 SDRAM M e m o r y P r o d u c ts N e v e r s t o p t h i n k i n g . Edition 2004-04-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany
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HYB18T256160AC-3
Abstract: HYB18T256160AC-5 HYB18T256400AC HYB18T256400AC-3 HYB18T256400AC-5 HYB18T256800AC HYB18T256800AC-5
Contextual Info: D a t a S h e e t , V 1 . 0 , M a r c h 2 0 04 HYB18T256400AC HYB18T256800AC HYB18T256160AC 256 Mbit DDR2 SDRAM M e m o r y P r o d u c ts N e v e r s t o p t h i n k i n g . Edition 2004-03-24 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
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HYB18T512160AC-5
Abstract: HYB18T512400AC HYB18T512400AC-5 HYB18T512800AC HYB18T512800AC-5
Contextual Info: D a t a S he et , V 1. 1 2 , M a r c h 2 0 04 HYB18T512400AC HYB18T512800AC HYB18T512160AC 512 Mbit DDR2 SDRAM M e m o r y P r o d u c ts N e v e r s t o p t h i n k i n g . Edition 2004-03-24 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany
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Contextual Info: D a t a S h e e t , V 1. 1 1 , D e c . 2 0 0 3 HYB18T512400AC HYB18T512800AC HYB18T512160AC 512 Mbit DDR2 SDRAM M e m o r y P r o d u c ts N e v e r s t o p t h i n k i n g . Edition 2003-12-17 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
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ODT01
Abstract: BA2A13
Contextual Info: D a t a S h e e t , V 0. 9 2 , D e c . 2 0 0 3 HYB18T256400AC HYB18T256800AC HYB18T256160AC 256 Mbit DDR2 SDRAM M e m o r y P r o d u c ts N e v e r s t o p t h i n k i n g . Edition 2003-12-17 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
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kcd3
Abstract: UPD6121f PD17012GF KT77 7012GF 51I7 KVF1 FC-7 3P ks-49 KTVA
Contextual Info: T — $ • S '— h S M O S * a iilS & M O S In te g ra te d C ircuit j t t P D 1 i f * (M W FM, MW , L W f i - t P L U a * lB ^ 7 <fc * > ' : ] > 1 2 G F - 5 3 m h P - 7 AiP D 1 7 0 1 2 G F -0 5 3 ti^ # ^ f& < 7 P L L JiiÈ S '> > -tri# -< 1 f^ F M > MW, L W* . ! —
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lw31joam77kcd3upd6121f+8pd17012gfkt777012gf51i7kvf1fc-7 3pks-49ktva
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rdc 2882
Abstract: TS3DD
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC145532 Advance Information ADPCM T ran s c o d er DW SUFFIX SOG CASE 751G Conforms to G.721-1988 and T1.301-1987 The MC145532 Adaptive Differential Pulse Code Modulation ADPCM Transcoder provides a low-cost, full-duplex, single-channel transcoder to (from)
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600 DKZ
Contextual Info: Data Sheet Dual, 10-Bit nanoDAC with 2 ppm/°C Reference, SPI Interface AD5313R FEATURES FUNCTIONAL BLOCK DIAGRAM VDD Low drift 2.5 V reference: 2 ppm/°C typical Tiny package: 3 mm x 3 mm, 16-lead LFCSP Total unadjusted error TUE : ±0.1% of FSR maximum
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73fo
Abstract: IC KSS 344 tfk 1490 d17012gf MW26 23 tfk 101 cd7y ib7a JCOP lwm 1602 d
Contextual Info: M O S ili* 0 E £ M O S j u F M , M W , L W P D f a - ± 1 7 ^ fc 1 2 In te g ra te d G F - C ir c u it 5 4 F8 ^ , MW, LW ^a. tl/cC M O S LSI T 'fo PLLjI)}j£t& '>>'tz-tKif • T i ' 3 fc to, h P ~ 7 , LCD3> h P - ? / * - •
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upd17012gf-054oam77fm18j73fo+9ic kss 344tfk 1490d17012gfmw2623 tfk 101cd7yib7ajcoplwm 1602 d
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JMS27656
Abstract: ZD - 98F FFD socapex MIL-PRF-87937 amphenol 900047 DOC-000503-ANG JMS27468 900142 ZD 98F DOC-000030-ANG
Contextual Info: Amphenol LJT / HE 308 MIL-DTL-38999 Series I Subminiature cylindrical connectors www.amphenol-socapex.com - www.38999-solutions.com Amphenol <<< LJT / HE 308 Description Amphenol Socapex is a MIL-DTL-38999 series I standard QPL and HE308 qualified manufacturer. The LJT product
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G86 770 A2
Abstract: nvidia g86-730 u4614 ICS9LPR363DGLF g86 630 a2 thyristor t24 CX20549-12Z NB8P-SE-256M max8736a benq m23 AT
Contextual Info: 5 4 3 PCB STACK UP D 2 1 PB2/PB2A BLOCK DIAGRAM LAYER 1 : TOP LAYER 2 : SGND1 LAYER 3 : IN1 LAYER 4 : SVCC LAYER 5 : IN2 LAYER 6 : IN3 LAYER 7 : SGND2 LAYER 8 : BOT 01 PCI DEVICES IRQ ROUTING PCI DEVICE IDSEL# REQ# / GNT# Interrupts AD17 REQ0# / GNT0# INT A/B#
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max8736max8734tps51116r5c832+14318mhzics9lpr363dglf64pinstssop38rtc110msg86 770 a2nvidia g86-730u4614g86 630 a2thyristor t24cx20549-12znb8p-se-256mmax8736abenq m23 at
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