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semikron bridge rectifier sk 8 25 08

Contextual Info: se MIKRDN V rsm V rrm Ifrms maximum values for continuous operation 175 A | 250 A | 250 A V V Ifav (sin. 180; Tease — 100 A (85 °C) 160 A (95 °C) 500 400 SKKD 100/04 160 A (95 °C) 900 800 SKKD 100/08 SKKD 162/08 1300 1200 SKKD 100/12 SKKD 162/12 SKKE 162/12

hp 2503

Abstract: KG41 KG252 Pole-120 kg64b KG100C
Contextual Info: KG-Switches Technical Data KG 125 KG 160 KG250 KG315 KG10 KG20 KG32 KG10A KG20A KG32A KG41 KG64 KG80 KG100 KG126 KG161 KG251 KG316 KG10B KG20B KG32B KG41B KG64B KG80C KG100C KG127 KG 162 KG252 KG317 Selection Data V V V V 690 660 300 400 690 660 600 500 690

1N52398

Abstract: 1N52288 1n52348 317 on zener e4b diode 1587-1 1N5223B 1N5224B 1N5225B 1N5226B
Contextual Info: - DO-35 Standard Zener Diodes 500 mW CPE Electrical Characteristics (At Ta=25°C, U nless Otherwise Specified) 1 * ZSM vF (mA) max (V) (mA) (W) 1764 1.1 200 0.5 162 1701 1.1 200 0.5 1.0 151 1587 1.1 200 0.5 25 1.0 138 1443 1.1 200

thyristor t16

Abstract: thyristor t16 400
Contextual Info: se MIKRDN V rsm V rrm dv/ SEMIPACK 2 Thyristor / Diode Modules Itrms (maximum value for continuous operation V drm dt)cr 220 A 250 A 220 A 250 A V V/)iS 148 A 168 A 148 A 168 A SKKT SKKT SKKH SKKH 162/08 D Itav (sin. 180; Tcase = 80 °C) V 500 132/08 D

110T

Abstract: AC03DJM AC03DJM-Z AC03DSM AC03DSMA AC03FJM AC03FJM-Z AC03FSM AC03FSMA lf7a
Contextual Info: 162 — — e A C 0 3 r D, F j J M , o n a t > t i£ NT-7 A C 0 3 r A C 0 3 r D, F j J M - Z 3A K fó , .+' * •> ( UL9 4 V -0 ilü 0 AC0 3 r D, F j J M - Z Ü f f i H H W Vtm A C 0 3 D JM , A C 0 3 D JM - Z A C 0 3 F JM , A C 0 3 F JM - Z Vd sm 500 700

Contextual Info: PAN-TERM Fork Terminals LOCKING FORK TERMINALS Dimensions In. A W C G Std. Pkg. Qty. PN18-6LF-C Red .145 #6 .82 .27 .22 .63 100 500 1000 6000 PN18-6LFW-C Red .145 #6 .85 .29 .22 .64 100 500 1000 6000 Red .145 #8 .89 .29 .25 .68 100 500 1000 6000 Red .145

Advani-Oerlikon

Abstract: DDD0056 SM25 SM40 SM55 SM70 Oerlikon
Contextual Info: ADVANI OERLIKON/ SEMICOND 3hE D ' • D S b l b Mfi D DD0056 1 ■ S E L I _ | - "T-0/-0\ p X o S + II RELIABLE POWER SEMICONDUCTOR RECTIFIERS TYPE VRRM VRSM ' rrm 1F AV ' f(DC) VOLTS VOLTS mA AMP SMI v/6 SMI A o SMI / 1 2 SMI 50 100 200 400 600 1000

Sensick P

Contextual Info: Photoelectric Proximity Switch WT 250, Background Suppression, Red Light – DC Scanning distance 10 . 600 mm Dimensional illustration 19.2 Photoelectric proximity switch 4 43 20 4.9 5 60 10 90° 18.8 WT 250-P 460 WT 250-N 162 WT 250-N 460 SENS. Max. 7 8

Contextual Info: 12 - Sensitron Hermetic Discrete IGBTs in TO-254 & TO-258 Packages 2.1- Hyper Fast IGBT Devices: Vces Part Number SHDG1001 SHDG1002 Volts 500 600 Continuous Collector Current lc@Tc=90°C Continuous Collector Current lc @ Tc=25°C Amps 24 24 Amps 48 48 Pulsed

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC10E416 MC100E416 Differential D and Q; VBB available 600 ps Max. Propagation Delay High Frequency Outputs 2 Stages of Gain Extended 100E VEE Range of -4.2V to -5.46V Internal 75k£i Input Pulldown Resistors The MC 10E416/100E416 is a 5-bit differential line receiving device. The 2.0 GHz

Contextual Info: * QUINT DIFFERENTIAL LINE RECEIVER SYNERGY SY10E416 SY100E416 SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Differential D and Q Vbb output for single-ended use 600ps max. propagation delay High frequency outputs 2 stages of gain Extended 100E V ee range of -4.2V to -5.46V

Contextual Info: SY10E416 SY100E416 FINAL QUINT DIFFERENTIAL LINE RECEIVER DESCRIPTION FEATURES • Differential D and Q ■ Extended 100E VEE range of –4.2V to –5.5V VBB output for single-ended use 600ps max. propagation delay High frequency outputs 2 stages of gain Internal 75KΩ input pull-down resistors

Contextual Info: * QUINT DIFFERENTIAL LINE RECEIVER SYNERGY SY10E416 SY100E416 SEMICONDUCTOR FEATURES • ■ Differential D and Q ■ Extended 100E V ee range of -4 .2 V to -5 .5 V ■ V bb output for single-ended use ■ 600ps max. propagation delay ■ High frequency outputs

semikron skmt E63 532

Abstract: semikron skMt 132 /04 semikron skMt 132 SKMT132 semipack semikron skmt e63532 semikron skkt 132 SKND 162/12 semikron skMt 25
Contextual Info: VRSM VRRM IFRMS maximum value for continuous operation 350 A V V IFAV (sin. 180; Tcase = 100 °C) 220 A 400 400 SKND 165/04 600 600 SKND 165/06 800 800 SKND 165/08 1200 1200 SKND 165/12 Symbol Conditions SKND 165 Units sin. 180; Tcase = 100 °C 220 A IFSM

Contextual Info: * QUINT DIFFERENTIAL LINE RECEIVER SYNERGY SY10E416 SY100E416 SEMICONDUCTOR DESCRIPTION FEATURES Differential D and Q Extended 100E V ee range of -4.2V to -5.5V VBB output for single-ended use 600ps max. propagation delay High frequency outputs 2 stages of gain

1N1542

Abstract: 1n2238A
Contextual Info: rectifiers 10 Part A 150°C PIV rnA 150°C 6 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 3 3 3 3 3 3 3 5 5 5 5 5 5 5 5 5 5 5 5 5 600 50 100 150 200 300 400 500 600 50 100 200 300 400 500 600 50 50 100 100 200 240 200 400 480 400 600 720 600 50 200 300 400 500 600 500

Contextual Info: P6SMB6V8 . P6SMB300A P6SMB6V8C . P6SMB250CA 600 W Unidirectional and Bidirectional Surface Mounted Transient Voltage Suppressor Diodes Dimensions in mm. CASE: SMB/DO-214AA Voltage 6.8 to 300 V Power 600 W / ms R • Glass passivated junction

BCY78

Abstract: BC107 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC177 BCY59
Contextual Info: N P N LOW LEV EL < Type o< CD Max 2N3053 60 V ceO U 'C: V mA V mA mA 40 700 1.4 150 15 !c Ib Min f T at h FE at Min. Max. 50 250 Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100 50 1000 TO-39 2N4037 50 600 TO-39 2N1131 2N1132 150 15 20

MIPS 32-bit bus architecture

Abstract: ColdFire v5 serial "printer interface" controller coldfire v3 LAN switch with HDLC MIPs datasheet schematics of laser printers 5206E MIPS MIPS bus architecture
Contextual Info: 32-bit ColdFire Portfolio Transportation and Standard Products Group TSPG 32-bit Embedded Controller Division (TECD) Kevin Klein Standard Products Marketing Manager What we’ll cover 68K/ColdFire ◆ ColdFire Evolution Cumulative Shipments 600 ◆ Family Features

DSS300A13

Abstract: DSS300A13R DSS300A15R DSS300A1S DSS300A8 E10DS1 E10DS2 E10DS4
Contextual Info: - AË m J£ is f a ^ & M 57- 1.j SI # ft & tt s S 1FSM Tàfèft VFtnax (A (°C) Vr s m Vr rm Vr IFM Tfc# (V) (V) (V) (A) (°C) 1600 1600 1800 1800 1000 1300 1300 1500 1500 800 300 300 300 300 300 79c 67c 79c 67c 79c 6000 6000 6000 6000 6000 1000 250 400

DSS300A13

Abstract: DSS300A13R DSS300A15R DSS300A1S DSS300A8 E10DS1 E10DS2 E10DS4 EA31FS1F E11P
Contextual Info: - AË m J£ is f a ^ & M 57- 1.j SI # ft & tt s S 1FSM Tàfèft VFtnax (A (°C) Vr s m Vr rm Vr IFM Tfc# (V) (V) (V) (A) (°C) 1600 1600 1800 1800 1000 1300 1300 1500 1500 800 300 300 300 300 300 79c 67c 79c 67c 79c 6000 6000 6000 6000 6000 1000 250 400

EG1a

Abstract: DSS300A13 DSS300A13R DSS300A15R DSS300A1S DSS300A8 E10DS1 E10DS2 E10DS4
Contextual Info: - AË m J£ is f a ^ & M 57- 1.j SI # ft & tt s S 1FSM Tàfèft VFtnax (A (°C) Vr s m Vr rm Vr IFM Tfc# (V) (V) (V) (A) (°C) 1600 1600 1800 1800 1000 1300 1300 1500 1500 800 300 300 300 300 300 79c 67c 79c 67c 79c 6000 6000 6000 6000 6000 1000 250 400

17N55

Abstract: MOSFET 17N60 17N60 IXTM17N55 IXTH17N60
Contextual Info: IDE I X Y S CORP D I 4t>ôt>22t, 0 0 00 3M b I r - 5 ? - / r MegaMOS'“ FETs n ix Y S IXTH17N60, 55 IXTM17N60, 55 MAXIMUM RATINGS Sym. IXTH17N55 IXTM17N55 IXTH17N60 IXTM17N60 Unit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (Rg s = 1-OMfl) (1)

Contextual Info: HS Ro iant l mp Co TRANSIENT VOLTAGE SUPPRESSORS 600W SERIES TVS DIODES/DO-214AA CASE 3 600W TYPE P6FMBJ6.8 P6FMBJ6.8A P6FMBJ7.5 P6FMBJ7.5A P6FMBJ8.2 P6FMBJ8.2A P6FMBJ9.1 P6FMBJ9.1A P6FMBJ10 P6FMBJ10A P6FMBJ11 P6FMBJ11A P6FMBJ12 P6FMBJ12A P6FMBJ13 P6FMBJ13A